Abstract: A device for eliminating poisons and pollutants from the human body and for revitalizing cells includes a temperature controlled upper cover having a natural five primary substance stone coating layer, a temperature controlled lower mat having vibrators and a natural five primary substance stone coating layer, a herb essence supplier connected to the interior of space formed by the upper cover and the lower mat, and a negative ion producing air pump connected to the herb essence supplier for supplying negative ions. The device adjusts the temperature of a user in the interior space between the upper cover and the lower mat and discharges the poisons in the human body through perspiration holes on the skin by the action of the natural five primary substance stone and absorbed herbal essence.

Abstract: A device for eliminating poisons and pollutants from the human body and for revitalizing cells includes a temperature controlled upper cover having a natural five primary substance stone coating layer, a temperature controlled lower mat having vibrators and a natural five primary substance stone coating layer, a herb essence supplier connected to the interior of space formed by the upper cover and the lower mat, and a negative ion producing air pump connected to the herb essence supplier for supplying negative ions. The device adjusts the temperature of a user in the interior space between the upper cover and the lower mat and discharges the poisons in the human body through perspiration holes on the skin by the action of the natural five primary substance stone and absorbed herbal essence.

Abstract: A lie-down personal sauna comprises a base plate having a substantially middle portion, a first cover having a front edge and a bottom edge, a second cover having a lower edge, a rear edge and a cutout, a hingedly attaching member, and a heating member. The bottom edge is attached to the base plate so that the first cover partially covers the base plate. The hingedly attaching member attaches the second cover to either the first cover or the substantially middle portion of the base plate so that the second cover can be moved from an open position to a closed position through the hingedly attaching member. The base plate, the first cover and the second cover form a substantially enclosed cavity when the second cover is at the closed position, and the user is received into the cavity at the open position of the second cover and maintained within the personal sauna under the closed position of the second cover.

Abstract: A method for fabricating a semiconductor memory device including a matrix of memory cells each constituted by one transistor and one capacitor and capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of its elements. The method includes the steps of: (a) forming a transistor gate electrode in a portion of an insulating layer formed over a semiconductor substrate, in a buried manner; (b) forming a trench in the semiconductor substrate through a portion of the insulating layer; and (c) forming a transistor channel region, a source, a drain and a capacitor storage node, as a single layer, over a region defined over a transistor gate electrode-buried portion of the insulating layer and a region defined in the trench. Thereby a source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer.

Abstract: A DRAM cell and a method for fabricating the same capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of elements. A capacitor structure is provided, which includes a common storage node formed at the inner wall of a trench, and two plate electrodes connected to each other in parallel, that is, a substrate and a polysilicon layer formed over the storage node via a second dielectric film and connected to the substrate in parallel. With such a capacitor structure, the capacitance per unit capacitor area can be maximized. A source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer. With this structure, a minimum information transmitting path is obtained, thereby enabling the overall structure and the fabrication therefor to be simplified. Furthermore, the present invention makes it easy to form an active region where elements are formed, without using an element isolation process.

Abstract: A method for fabricating an LDD MOS transistor having an improved structure capable of simplifying the fabrication and improving characteristics of the transistor.