Abstract: A thin film deposition apparatus includes: a chamber configured to process a plurality of substrates; a plurality of heater members disposed to correspond to the substrates to heat the substrates, respectively; a plurality of lift pins configured to support lower surfaces of the substrates while elevating through the heater members, respectively; a plurality of heat shield plates, having a heat shield function between the heater members, on which lower ends of the lift pins are configured to be seated; and a plurality of support columns coupled with and supporting the heater members.

Abstract: The present inventive concept relates to a gas distribution apparatus of a substrate processing apparatus including: a first gas distribution module distributing a processing gas to a first gas distribution space; and a second gas distribution module distributing a processing gas to a second gas distribution space which differs from the first gas distribution space, a substrate processing apparatus, and a substrate processing method.

Abstract: The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.

Abstract: One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Abstract: One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Abstract: The present inventive concept relates to a gas distribution apparatus of a substrate processing apparatus including: a first gas distribution module distributing a processing gas to a first gas distribution space; and a second gas distribution module distributing a processing gas to a second gas distribution space which differs from the first gas distribution space, a substrate processing apparatus, and a substrate processing method.

Abstract: Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.

Abstract: The present disclosure relates to a substrate processing apparatus, to which a source gas and a reactant gas are distributed, including a first exhaust line exhausting a first exhaust gas including the reactant gas and the source gas which is more than the reactant gas, a second exhaust line exhausting a second exhaust gas including the source gas and the reactant gas which is more than the source gas, a catch device installed in the first exhaust line, and a third exhaust line connected to an exhaust pump to exhaust the first exhaust gas passing through the catch device and the second exhaust gas passing through the second exhaust line.

Abstract: A substrate treatment device according to an embodiment of the present invention may include a process chamber, a substrate supporting part installed in the process chamber to support a plurality of substrates and rotating in a certain direction, a chamber lid covering a top of the process chamber to be opposite to the substrate supporting part, and a gas distribution unit installed in the chamber lid to spatially separate different first and second gases and distribute the spatially separated first and second gases to the plurality of substrates. The substrate supporting part may include a first disk provided to be rotatable and at least one second disk disposed on the first disk to rotate and revolve about a center of the first disk according to the first disk rotating, the plurality of substrates being disposed on the at least one second disk.

Abstract: Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.