Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: The present invention relates to an anti-lysyl-tRNA synthetase (KRS) antibody selectively binding to KRS, and a use thereof and, more specifically, to an antibody binding to human KRS or a fragment thereof, a method for producing the same, and a composition containing the same for diagnosing cancer, autoimmune diseases or inflammatory diseases. The antibody or fragment thereof of the present invention specifically binds to human KRS, and enables KRS detection and inhibition due to the absence of cross-linkage reactivity with the other proteins including the same ARS family, and thus the antibody or fragment thereof can be used to detect KRS and diagnose KRS-related diseases, i.e., cancer, autoimmune diseases or inflammatory diseases.

Abstract: The present invention relates to an anti-lysyl-tRNA synthetase (KRS) antibody selectively binding to KRS, and a use thereof and, more specifically, to an antibody binding to human KRS or a fragment thereof, a method for producing the same, and a composition containing the same for diagnosing cancer, autoimmune diseases or inflammatory diseases. The antibody or fragment thereof of the present invention specifically binds to human KRS, and enables KRS detection and inhibition due to the absence of cross-linkage reactivity with the other proteins including the same ARS family, and thus the antibody or fragment thereof can be used to detect KRS and diagnose KRS-related diseases, i.e., cancer, autoimmune diseases or inflammatory diseases.

Abstract: A method and structure for crystallizing film is disclosed. The method includes the steps of forming a film on a substrate, forming a lens on the film to focus an electromagnetic wave on the film and directing the electromagnetic wave on the film inclusive of the lens to crystallize the film.

Abstract: A method and structure for crystallizing film is disclosed. The method includes the steps of forming a film on a substrate, forming a lens on the film to focus an electro-magnetic wave on the film and directing the electro-magnetic wave on the film inclusive of the lens to crystallize the film.

Abstract: A method for manufacturing a thin film transistor is disclosed.

Abstract: A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first and second internal electrodes disposed to face each other with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on an external surface of the ceramic body, wherein the dielectric layer contains a barium titanate-based powder particle having a core-shell structure including a core and a shell around the core, the shell having a structure in which titanium is partially substituted with an element having the same oxidation number as that of the titanium in the barium titanate-based powder particle and having an ionic radius different from that of the titanium in the barium titanate-based powder particle, and the shell covers at least 30% of a surface of the core.