Abstract: A coil component includes: a body having a first and a second surface opposing each other, and a third and a fourth surface opposing each other and connecting the first surface and second surface; a support member disposed within the body; first and second coils disposed on the support member; first and third external electrodes disposed on the body and connected to the first coil; second and fourth external electrodes disposed on the body and connected to the second coil; a first via electrode disposed within the body and connecting the first coil and the first external electrode; and a second via electrode disposed within the body and connecting the second coil and the second external electrode, wherein the first to fourth external electrodes are disposed on the first surface, the third external electrode extends onto the third surface, and the fourth external electrode extends onto the fourth surface.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes: a support substrate; a first layer disposed on the support substrate and applying tensile stress to the support substrate; a bonding layer disposed on the first layer; a second layer disposed on the bonding layer and applying compressive stress to the support substrate; and a light emitting structure disposed on the second layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.

Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Abstract: A magnetooptical disk focus servo and tracking servo which remain stable and which make various servo control gains uniform even when the amount of light detected in a photodetecting portion changes. An operator outputs a sum signal by adding signals corresponding to an amount of light detected in at least two photodiodes among a plurality of photodiodes of the photodetecting portion. A first divider divides a focus error signal by the sum signal. A second divider divides a tracking error signal by the sum signal. A focus servo portion controls a focus actuator using the output of the first divider, and a tracking servo portion for controlling a track actuator with the output of the second divider.

Abstract: A servo controlling apparatus of an optical disk drive and a control method thereof are provided for achieving precise control by automatically controlling the gain of error signals caused by the difference in the amount of light irradiated during recording and reproducing, and then using the automatically gain-controlled signal. In a first control step, a focus error signal and a tracking error signal generated from a photodetecting portion via an operator are multiplied by a predetermined value in different multipliers, and then each obtained value is divided by an RF sum signal to control the value of error to within a predetermined target value. In a second control step, each multiplied focus error signal and tracking error signal are divided by a DC signal corresponding to the average level of the RF sum signal when the error value reaches the target value.