Patents by Inventor Min-Hyung Moon

Min-Hyung Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8310262
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: November 13, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Publication number: 20100039119
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Application
    Filed: October 22, 2009
    Publication date: February 18, 2010
    Inventors: Sang-Kyoung LEE, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: 7626414
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: October 13, 2008
    Date of Patent: December 1, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Publication number: 20090039348
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Application
    Filed: October 13, 2008
    Publication date: February 12, 2009
    Inventors: Sang-Kyoung LEE, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: 7446556
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: November 4, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Publication number: 20060261842
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Application
    Filed: July 24, 2006
    Publication date: November 23, 2006
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: 7081770
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: November 15, 2005
    Date of Patent: July 25, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Publication number: 20060061381
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Application
    Filed: November 15, 2005
    Publication date: March 23, 2006
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: 6982569
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: January 3, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Publication number: 20040124869
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Application
    Filed: November 13, 2003
    Publication date: July 1, 2004
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: 6734925
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: December 7, 1998
    Date of Patent: May 11, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon
  • Patent number: RE41873
    Abstract: A plurality of gate lines are formed on an insulating substrate in the horizontal direction, a gate shorting bar connected to the data lines is formed in the vertical direction and a gate insulating film is formed thereon. A plurality of data lines intersecting the gate lines are formed on the gate insulating film in the vertical direction, and a data shorting bar connected to the data lines is formed outside the display region. A first shorting bar is formed on the gate insulating film, located between the gate lines and the gate shorting bar, and connected to the odd gate lines. A second secondary shorting bar is formed parallel to the first shorting bar and connected to the even gate lines.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: October 26, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Kyoung Lee, Dong-Gyu Kim, Min-Hyung Moon