Abstract: A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract: The present invention relates to a polymeric triarylmethane dye, a blue resin composition for a color filter including the polymeric dye, and a color filter using the resin composition. The blue resin composition of the present invention is highly soluble in solvents and has excellent luminance, contrast, heat resistance, and chemical resistance due to the use of the polymeric triarylmethane dye. Particularly, the blue resin composition exhibits higher luminance and contrast than blue resin compositions using existing pigments. In addition, the blue resin composition of the present invention has greatly improved heat resistance and chemical resistance compared to blue resin compositions using existing triarylmethane dye monomers.

Abstract: Disclosed is a method of activating protein kinase C theta (PKC?) in an HIV or HTLV infected animal comprising administering to the animal an effective amount of a compound of formula (I): Formula (I), or an epimer thereof; wherein Ar and R1-R6 are described herein. Examples of diseases or conditions associated with PKC? include HIV1 infection, AIDS, HTLV infection, and adult T cell leukemia/lymphoma.

Abstract: Disclosed are methods of treating an animal for insulin resistance and associated diseases or conditions, activating the transcriptional activity of heat shock factor 1 (HSF1), or inducing the expression of heat shock protein 70 (HSP70) in an animal in need thereof, wherein the methods involve administering an effective amount of one or more compounds of formula (I) or an epimer thereof, wherein Ar, and R1-R6 are described herein. Examples of diseases or conditions associated with insulin resistance include diabetes, obesity, inflammation, metabolic syndrome, polycystic ovary disease, arteriosclerosis, non-alcoholic fatty liver disease, reproductive abnormality in a female, and growth abnormality.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Abstract: A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Abstract: Disclosed are methods of treating an animal for insulin resistance and associated diseases or conditions, activating the transcriptional activity of heat shock factor 1 (HSF1), or inducing the expression of heat shock protein 70 (HSP70) in an animal in need thereof, wherein the methods involve administering an effective amount of one or more compounds of formula (I) or an epimer thereof, wherein Ar, and R1-R6 are described herein. Examples of diseases or conditions associated with insulin resistance include diabetes, obesity, inflammation, metabolic syndrome, polycystic ovary disease, arteriosclerosis, non-alcoholic fatty liver disease, reproductive abnormality in a female, and growth abnormality.

Abstract: A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide semiconductor disposed between the source electrode and the drain electrode; a gate insulation pattern disposed on the active pattern; a gate electrode disposed on the gate insulation pattern and overlapping with the channel; and a light-blocking pattern disposed between the base substrate and the active pattern.

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract: The present invention relates to a method for screening skin aging-specific genes and a method for screening anti-aging materials by controlling the expression of the genes. The invention can provide a new material having an effect on the prevention of skin aging and the treatment of skin diseases by obtaining new target genes related to skin aging and controlling the expression of the genes.

Abstract: Disclosed are a method and system for measuring leakage area for construction of smoke control equipment. The invention provides a system for measuring a leakage area of a test room that can include: a chamber positioned in the test room and storing air compressed by a compressor; one or more pressure sensors configured to measure a pressure change of the test room when the compressed air in the chamber is discharged instantaneously; and a gauging means configured to measure an effective leakage area in the test room by using a pressure change value of the test room detected by the one or more pressure sensors. Embodiments of the invention can enable an accurate measurement of leakage area at low cost.

Abstract: In a method of manufacturing a display substrate, a color filter is formed on a first substrate including a switching element. A pixel electrode is formed on the first substrate including the color filter. An inorganic alignment layer including an inorganic compound is formed on the first substrate including the pixel electrode. Thus, impurities generated from the color filter may be blocked from flowing into a liquid crystal layer, and liquid crystal molecules of the liquid crystal layer may be aligned by the inorganic layer.