Abstract: A photoresist underlayer composition comprising a first polymer comprising a first structural unit derived from an N-(alkoxymethyl) (meth)acrylic amide monomer; a second structural unit comprising an aromatic group, a heterocyclic group, an ester group, an amide group, or a combination thereof, wherein the second structural unit further comprises a crosslinkable group; wherein the first polymer comprises the second structural unit, the photoresist underlayer composition further comprises a second polymer comprising the second structural unit, or a combination thereof, a thermal acid generator; and a solvent.

Abstract: A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Abstract: A method for forming a photoresist relief image including applying a layer of a coating composition on a substrate; and disposing a layer of a photoresist composition on the layer of the coating composition, wherein the coating composition comprises an amine-containing polymer comprising a hydrocarbon-substituted amino group and having nitrogen atoms in an amount from 3 to 47 weight percent, based on a total weight of the amine-containing polymer.

Abstract: In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Abstract: A polymer comprising a first repeating unit including an amino group protected by an alkoxycarbonyl group; a second repeating unit including a nucleophilic group; and a third repeating unit including a crosslinkable group, wherein the first repeating unit, the second repeating unit, and the third repeating unit are different from each other.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: A method for forming a photoresist relief image including applying a layer of a coating composition on a substrate; and disposing a layer of a photoresist composition on the layer of the coating composition, wherein the coating composition comprises an amine-containing polymer comprising a hydrocarbon-substituted amino group and having nitrogen atoms in an amount from 3 to 47 weight percent, based on a total weight of the amine-containing polymer.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: New photobase generators suitable for use in photoresists are provided that correspond to Formula (I): X1—R1—O—C(?O)N(R2)R3??(I) wherein X1 is an optionally substituted aromatic group; R1 is a linker; and R2 and R3 are the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of R2 and R3 is an optionally substituted branched alkyl group having 4 or more carbon atoms.

Abstract: In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: New photobase generators suitable for use in photoresists are provided that correspond to Formula (I): X1—R1—O—C(?O)N(R2)R3??(I) wherein X1 is an optionally substituted aromatic group; R1 is a linker; and R2 and R3 are the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of R2 and R3 is an optionally substituted branched alkyl group having 4 or more carbon atoms.

Abstract: Topcoat compositions are provided that are suitably applied above a photoresist composition. Preferred topcoat compositions comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.

Abstract: The present disclosure provides a multiple band antenna for a vehicle able to receive multiple signals in various frequency bands, including radio, TV, mobile communication, GPS, telematics, and so forth, through one antenna. The multiple band antenna for a vehicle includes an elongated pole that is coupled to a base, the pole including: a connector having a connecting portion connected to a terminal of the base, a signal coil having one end portion connected to the connector and having a spirally wound helical portion, a bobbin fitted around the signal coil such that the signal coil is inserted therein, a coil member formed in the shape of a spirally wound coil and fitted around the bobbin, with one end portion connected to the connector; and a cover member covering the bobbin and the coil member.