Abstract: A gas-washout vent includes a housing with a first wall with one or more passages through the wall configured to provide fluid communication with a portion of the patient interface system exposed to a therapy pressure. The passages include respective first openings on a first surface of the first wall. The housing at least partially defines a second opening in communication with ambient atmosphere. A diffusing material is located at least partially within the housing to be adjacent the first surface. A surface of the diffusing material facing the first surface is spaced away from the first surface by a gap that extends to provide a fluid communication between all of the first openings and between all of the first openings and the second opening. The housing is configured so that air is prevented from flowing out of the housing at all areas directly opposite each of the first openings.

Abstract: Described herein are personal care compositions (e.g., bar soaps) that may include from about 0.1 to about 5 wt. % of a polysaccharide; from about 0.01 to about 12 wt. % of a fatty alcohol; and from about 0.5 to about 7 wt. % of a post-biotic blend, wherein all weight percentages are based on the total weight of the personal care composition. Methods of making and using the personal care compositions are also described herein.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus.

Abstract: A coil component is provided. The coil component includes a body having fifth and sixth surfaces opposing each other, first and second surfaces respectively connecting the fifth and sixth surfaces of the body and opposing each other, and third and fourth surfaces respectively connecting the first and second surfaces of the body and opposing each other in one direction, a recess disposed in an edge between one of the first and second surfaces of the body and the sixth surface of the body, a coil portion disposed inside the body and exposed through the recess, and an external electrode including a connection portion disposed in the recess and connected to the coil portion, and a pad portion disposed on one surface of the body. A length of the pad portion in the one direction is greater than a length of the connection portion in the one direction.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: Multi-layered polymer sheets include a first hard polymer film with an elastic modulus of 1000 MPa to 2500 MPa, and a first soft polymer film with an elastic modulus of 100 MPa to 1000 MPa disposed on the first hard polymer film. The elastic modulus of the first hard polymer film is greater than that of the first soft polymer film by at least 500 MPa. The first hard polymer film includes a thermoplastic polymer, and the first soft polymer film includes a thermoset polymer.

Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or in another embodiment, the PM layer adjoins a backside of the top shield and has a width equal to or greater than that of the FL.

Abstract: The embodiments of the present disclosure provide a method and apparatus for training an SVM model, a device and a computer-readable storage medium. The method comprises steps of: acquiring a dataset; loading the dataset; predicting the best storage format of the dataset online through an automatic tuning framework, and performing format conversion; and, executing an SMO algorithm to train an SVM model. In this way, the best data storage format and algorithm can be automatically selected according to the input dataset; in a global loop level, a large number of more efficient matrix multiplication operations are performed on the basis of the best data storage format to calculate a kernel matrix; and, in a local SMO solver level, finer memory optimization is performed by the register communication technology and the combined memory access method of the GPU, and the calculation resources of the hardware platform are fully utilized.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: Aspects of the disclosure relate to providing information about a vehicle dispatched to pick up the user. In one example, a request for the vehicle to stop at a particular location is sent. In response, information identifying a current location of the vehicle is received. A map is generated. The map includes a first marker identifying the received location of the vehicle, a second marker identifying the particular location, and a shape defining an area around the second marker at which the vehicle may stop. The shape has an edge at least a minimum distance greater than zero from the second area. A route is displayed on the map between the first marker and the shape such that the route ends at the shape and does not reach the second marker. Progress of the vehicle towards the area along the route is displayed based on received updated location information for the vehicle.

Abstract: Disclosed are a semiconductor memory device and a forming method thereof. The semiconductor memory device includes: a substrate; a nanowire structure suspended above the substrate, where the nanowire structure includes a channel region, as well as a source region and a drain region that are located at two ends of the channel region respectively, a size of the drain region is smaller than a size of the source region, and the source region, the drain region, and the channel region are of a same doping type; a word line structure surrounding the channel region; and a bit line connected to the drain region, and a capacitor structure connected to the source region.

Abstract: A technological equipment for tank track moving supports is provided and includes a zero-point positioning system, a workpiece identifying system and a clamping apparatus in cooperation with the moving support, the clamping apparatus includes a tooling plate, a clamp and a pressing device for pressing the moving support are detachably connected to the tooling plate, the moving support is located between the clamp and the pressing device, and the pressing device abuts against the moving support. The moving support with different shapes and sizes can be clamped, and the clamping is stable and convenient to operate.

Abstract: Provided are methods of treating cancer (e.g., a urothelial cancer) that comprise administering a polypeptide (e.g. a fusion polypeptide) that comprises a SIRP?-D1 domain variant and an Fc domain variant in combination with an antibody-drug conjugate (e.g., enfortumab vedotin). Also provided are related kits.

Abstract: A DC circuit breaker device is provided, including: a circuit breaker module including a first circuit breaker and a second circuit breaker connected in series with the first circuit breaker; a commutation module connected in parallel with the first circuit breaker and including a commutation capacitor, a commutation switch module and a commutation inductor connected in series; the commutation switch module including a commutation switch positive branch and a commutation switch negative branch; and a control module coupled to the circuit breaker module and the commutation module, and configured to control the switching on/off of the commutation switch positive branch and the commutation switch negative branch after the first circuit breaker is re-closed. A method of controlling a DC circuit breaker is also provided.

Abstract: A computer system is provided. The computer system includes a memory; a user interface; and a processor coupled with the memory and the user interface. The processor is configured to detect, within a response addressed to a browser, one or more identifiers of one or more web resources; determine relevance information associated with the one or more web resources; embed the relevance information into the response to generate an augmented response; and communicate the augmented response to the browser.

Abstract: A DC switchgear includes: an instrument compartment in which secondary components for monitoring, protecting and measuring are arranged; a busbar compartment in which a main busbar and a first fixed contact connected with the main busbar is arranged; a cable compartment in which a conductor is arranged for connecting to a cable, and a second fixed contact connected with the conductor is further arranged in the cable compartment or the busbar compartment; and a handcart compartment in which a handcart capable of moving in and out of the handcart compartment is arranged, wherein a current-carrying branch, a commutation branch and an energy-absorbing branch are arranged on the handcart, a first and a second movable contacts respectively for contacting with the first and the second fixed contacts are further arranged on the handcart, and the first and the second movable contacts are respectively connected to both ends of the current-carrying branch.

Abstract: The present invention provides a high voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material and method of making the same, the device comprises: an active area formed with the high voltage semiconductor device; a combined junction terminal protection structure having a RESURF (Reduced Surface Field) structure, the RESURF structure comprising a first biasing field plate electrically connecting to the active area and a ferroelectric material layer positioned below the first biasing field plate and in contact with the first biasing field plate. The high voltage semiconductor device structure may further assist in raising breakdown voltage (BV) of the device and meanwhile effectively reduce on-resistance (Ron) of the device compared with current junction terminal protection structure, and then miniaturization of the device structure may be fulfilled more easily.

Abstract: A system for knowledge graph construction. The system includes a computing device. The computing device has a processor and a storage device storing computer executable code. The computer executable code, when executed at the processor, is configured to: define entities and relations of the knowledge graph; provide documents having sentences; convert the sentences into fix length sentence embeddings and regard the sentence embeddings as primary capsule layers; use a set transformer to learn entity capsules and relation capsules from the primary capsule layers; for each triple, project head and tail entities from entity space to the specific relation space, and determine the relation exists when the sum of the projected head entity vector and the relation vector substantially equals to the projected tail entity vector; and construct the knowledge graph using the head entity, the tail entity, and the determined relation.

Abstract: The embodiments of the present disclosure provide a method and a system for leakage analysis of an urban pipeline, and a storage medium. The method includes: obtaining sample signal data of an original signal and a corresponding first waveform diagram; obtaining at least two first components and a second component by processing the sample signal data based on preset iteration operations; determining a mutual information entropy of two adjacent first components in the at least two first components; determining high-frequency signal data of the original signal based on the mutual information entropy; determining an effective characteristic signal and a corresponding second waveform diagram based on the high-frequency signal data and the sample signal data; determining whether the urban pipeline leaks based on the second waveform diagram; and in response to that the urban pipeline leaks, determining a leakage aperture of the urban pipeline based on the effective characteristic signal.