Abstract: A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.

Abstract: This application discloses electromagnetic energy mitigation assemblies and automotive vehicle components comprising the electromagnetic energy mitigation assemblies. An electromagnetic energy mitigation assembly includes a first electrically conductive layer and a second electrically conductive layer. First and second permalloy layers are along respective first and second opposite sides of the first electrically conductive layer. Third and fourth permalloy layers are along respective third and fourth opposite sides of the second electrically conductive layer. An electromagnetic noise suppression layer is sandwiched between the second and third permalloy layers. An automotive vehicle component includes an electromagnetic energy mitigation assembly configured to be positioned relative to one or more batteries of an automotive vehicle for providing electromagnetic shielding for the one or more batteries. The electromagnetic energy mitigation assembly includes a first electrically conductive layer.

Abstract: The present disclosure provides a circuit for detecting leakage between word lines in a memory device. The circuit includes a first and a second coupling capacitor. A first terminals of the first and second coupling capacitors are connected to a first word line and a second word line, respectively. The first terminals of the first and second coupling capacitors are also connected to a first and a second voltage supply, respectively. The circuit further includes a comparator, wherein a first input of the comparator is connected to a second terminal of the first coupling capacitor and a second input of the comparator is connected to a second terminal of the second coupling capacitor. The comparator is configured to send alarm signal when a differential voltage between the first input and the second input of the comparator is larger than a hysteresis level of the comparator.

Abstract: The invention provides a suspension modifier directly added into fracturing fluid for real-time proppant modification during fracturing and the application thereof, relating to the field of oil and gas production technologies. The suspension modifier is a controlled release nanoemulsion and comprises surface hydrophobic modifier, surfactant, cosurfactant and water. The suspension modifier is directly added into clear-water or active-water fracturing fluid while the proppant is added into water. After stirring, the suspension modifier is capable of self-assembling and being adsorbed on the proppant surface, so that the proppant surface becomes hydrophobic and aerophilic. The invention no longer requires the proppant to be pretreated, and the bubble-suspended proppant can be obtained directly by adding the suspension modifier to the clear-water or active-water fracturing fluid, and meanwhile adding the proppant to the fracturing fluid.

Abstract: An electronic device (e.g., a CTLE circuit of a receiver of a data link) includes a current source and two differential transistor groups. The current source is configured to generate a bias current according to a data rate of data carried by a pair of differential input signals. A subset of the two differential transistor groups is configured to be driven by the bias current to generate a pair of differential output signals from the pair of differential input signals. The two differential transistor groups include a first plurality of transistors receiving a first input signal and a second plurality of transistors receiving a second input signal. The first and second input signals form the pair of differential input signals. In some implementations, each transistor is coupled to a biasing circuit including a DC path coupled to an adjustable biasing voltage level for selecting and deselecting the respective transistor.

Abstract: A voltage regulator can include an operational amplifier powered by a supply voltage and configured to generate a first gate voltage. The voltage regulator can also include a first transistor configured to receive the first gate voltage and generate a first driving voltage. The voltage regulator can further include a second transistor configured to receive a second gate voltage and generate a second driving voltage. The first gate voltage can be generated based on feedback provided to the operational amplifier. The second gate voltage can be generated from the first gate voltage.

Abstract: A voltage regulator can include an operational amplifier powered by a supply voltage and configured to generate a first gate voltage. The voltage regulator can also include a first transistor configured to receive the first gate voltage and generate a first driving voltage. The voltage regulator can further include a second transistor configured to receive a second gate voltage and generate a second driving voltage. The first gate voltage can be generated based on feedback provided to the operational amplifier. The second gate voltage can be generated from the first gate voltage.

Abstract: The present disclosure provides a circuit for detecting leakage between word lines in a memory device. The circuit includes a first and a second coupling capacitor. A first terminals of the first and second coupling capacitors are connected to a first word line and a second word line, respectively. The first terminals of the first and second coupling capacitors are also connected to a first and a second voltage supply, respectively. The circuit further includes a comparator, wherein a first input of the comparator is connected to a second terminal of the first coupling capacitor and a second input of the comparator is connected to a second terminal of the second coupling capacitor. The comparator is configured to send alarm signal when a differential voltage between the first input and the second input of the comparator is larger than a hysteresis level of the comparator.

Abstract: A voltage regulator can include an operational amplifier powered by a supply voltage and configured to generate a first gate voltage. The voltage regulator can also include a first transistor configured to receive the first gate voltage and generate a first driving voltage. The voltage regulator can further include a second transistor configured to receive a second gate voltage and generate a second driving voltage. The first gate voltage can be generated based on feedback provided to the operational amplifier. The second gate voltage can be generated from the first gate voltage.

Abstract: A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.

Abstract: A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.

Abstract: A method of forming an integrated circuit includes: forming a dielectric layer, a hard mask layer, a film layer and a photoresist layer; and patterning the photoresist layer to form a via mask, where the via mask is oversized, such that the via mask extends across opposing sides of a metal line mask in the hard mask layer. The method further includes: etching the film layer and the dielectric layer based on the patterned photoresist layer; ashing the photoresist layer and the film layer; etching the dielectric layer based on a pattern of the hard mask layer to provide a via region and a metal line region; etching the hard mask layer and the dielectric layer; and performing a plurality of dual damascene process operations to form a via in the via region and a metal line in the metal line region in the integrated circuit.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) chip with an on-chip transformer. The on-chip transformer includes a primary inductor and a secondary inductor. The primary inductor is configured to have a first-primary coil portion formed of a first patterned metal trace disposed in a first metal layer and a second-primary coil portion formed of a second patterned metal trace disposed in a second metal layer. The secondary inductor is configured to have a first-secondary coil portion formed of a third patterned metal trace that interleaves with the first patterned metal trace in the first metal layer and a second-secondary coil portion formed of a fourth patterned metal trace that interleaves with the second patterned metal trace in the second metal layer.

Abstract: A 3D flash memory device includes a substrate having a substantial planar surface. A plurality of active columns of semiconducting material is disposed above the substrate. Each of the plurality of active columns extends along a first direction orthogonal to the planar surface of the substrate. The plurality of active columns is arranged in a two-dimensional array. Each of the plurality of active columns may comprise multiple local bit lines and multiple local source lines extending along the first direction. Multiple channel regions are disposed between the multiple local bit lines and multiple local source lines. A word line stack wraps around the plurality of active columns. A charge-storage element is disposed between the word line stack and each of the plurality of active columns.

Abstract: A sense amplifier includes a sense circuit coupled to a bitline and a sense node, a charge circuit coupled to the sense node and the sense circuit, a first current control transistor, an inverter circuit having a first latch node and a second latch node, coupled to the first current control transistor, and an input circuit coupled to the first latch node, the second latch node and the sense node. The first current control transistor includes a first terminal coupled to the system voltage source, a second terminal coupled to the inverter circuit, and a control terminal configured to receive a current control signal. The first current control transistor is a P-type transistor.

Abstract: A method of forming an integrated circuit includes: forming a dielectric layer, a hard mask layer, a film layer and a photoresist layer; and patterning the photoresist layer to form a via mask, where the via mask is oversized, such that the via mask extends across opposing sides of a metal line mask in the hard mask layer. The method further includes: etching the film layer and the dielectric layer based on the patterned photoresist layer; ashing the photoresist layer and the film layer; etching the dielectric layer based on a pattern of the hard mask layer to provide a via region and a metal line region; etching the hard mask layer and the dielectric layer; and performing a plurality of dual damascene process operations to form a via in the via region and a metal line in the metal line region in the integrated circuit.

Abstract: A method of forming vias aligned with metal lines in an integrated circuit is provided. The method includes: forming a stacked dielectric, capped, hard mask, and first film and photoresist layers; patterning first photoresist layer to provide metal line masks; etching hard mask layer based on patterned first photoresist layer to form metal line masks; ashing first photoresist and film layers; forming second film and photoresist layers on hard mask layer; patterning second photoresist layer to form via masks across opposing sides of metal line masks; etching second film and capped layers based on patterned second photoresist layer; ashing second photoresist and film layers; etching dielectric and capped layers based on a pattern of hard mask layer to provide via and metal line regions; etching hard mask and capped layers; and performing dual damascene process operations to form vias and metal lines in via and metal line regions.

Abstract: Antimicrobial devices for use with at least a portion of a medical device include at least one flexible portion configured to secure the antimicrobial device to the at least a portion of the medical device. Medical device assemblies include an access port and an antimicrobial device adapted to disinfect at least a portion of the access port. Methods of disinfecting a portion of a device include deforming a housing of the antimicrobial device to couple the antimicrobial device to the portion of the device.

Abstract: A method of forming vias aligned with metal lines in an integrated circuit is provided. The method includes: forming a stacked dielectric, capped, hard mask, and first film and photoresist layers; patterning first photoresist layer to provide metal line masks; etching hard mask layer based on patterned first photoresist layer to form metal line masks; ashing first photoresist and film layers; forming second film and photoresist layers on hard mask layer; patterning second photoresist layer to form via masks across opposing sides of metal line masks; etching second film and capped layers based on patterned second photoresist layer; ashing second photoresist and film layers; etching dielectric and capped layers based on a pattern of hard mask layer to provide via and metal line regions; etching hard mask and capped layers; and performing dual damascene process operations to form vias and metal lines in via and metal line regions.

Abstract: An antimicrobial device comprises a housing structure configured to couple to a medical device and comprising an antimicrobial polymer material comprising polyurethane, the antimicrobial polymer material formulated to at least partially decontaminate surfaces of the medical device in at least temporary physical contact with the housing structure. A medical device assembly, and a method of decontaminating a medical device are also described.