Abstract: A circuit board according to an embodiment includes an insulating layer; and a circuit pattern disposed on the insulating layer, wherein the circuit pattern includes a copper foil layer disposed on the insulating layer, a first plating layer disposed on the copper foil layer, and a second plating layer disposed on the first plating layer, and wherein the copper foil layer has a thickness in a range of 2 ?m to 5 ?m.

Abstract: A circuit board, according to an embodiment, comprises: a first insulating layer; a second insulating layer disposed on one surface of the first insulating layer; and a third insulating layer disposed on the other surface of the first insulating layer. A circuit pattern is disposed on at least one insulating layer from among the first to third insulating layers, at least one insulating layer from among the first to third insulating layers comprises glass fiber, at least one insulating layer from among the first to third insulating layers does not comprise glass fiber, and the thicknesses of the first to third insulating layers are different from each other.

Abstract: The present disclosure provides a waveguide display apparatus. The waveguide waveguide display apparatus of the present disclosure is a waveguide display apparatus for correcting curved surface reflection distortion, the waveguide display apparatus including a waveguide for guiding light inputted from the outside; a first diffractive optical element disposed at the waveguide, and diffracting the light inputted from the outside to the inside of the waveguide; and a second diffractive optical element disposed at the waveguide, and diffracting the light guided by the waveguide to output a plurality of diffracted lights in a direction of a curved surface reflector located outside, wherein the second diffractive optical element has a structure of a diffraction grating corresponding to a curvature of the curved surface reflector such that the diffracted lights are reflected at different locations of the curved surface reflector in directions parallel to each other.

Abstract: A gripper includes a body part, a finger base part coupled to the body part, and a finger part coupled to a first side of the body part or the finger base part and coupled to the body part or the finger base part to be reciprocal, wherein the finger part comprises a first link structure and a second link structure, sides of which are coupled to the finger base part, respectively, and wherein, in the first link structure and the second link structure, a first support area of the first link structure and a second support area of the second link structure reciprocate in only one of a plurality of directions that cross a direction in which the finger part reciprocates with respect to the finger base part.

Abstract: A gripper includes a body part, a finger base part coupled to the body part to be rotatable, the finger base part including a first finger base part and a second finger base part configured such that when the first finger base part is rotated in a first direction with respect to the body part, the second finger base part is provided to be rotatable in a second direction opposite the first direction with respect to the body part, and a finger part coupled to a first side of the body part or the finger base part to be reciprocal.

Abstract: An embodiment device includes an input module including a motor configured to generate a rotational force, an output module configured to receive power from the input module to be rotatable, and a connection module having a first side coupled to the input module and a second side, opposite the first side, coupled to the output module, wherein the connection module is configured to transmit the power from the input module to the output module.

Abstract: An organic light emitting diode (OLED) includes an emissive layer with at least one emitting part includes at least one emitting material layer, a first electron transport layer and a second electron transport layer disposed sequentially between two facing electrodes, wherein the first electron transport layer includes a first electron transporting material of a benzimidazole-based compound substituted with at least one spiro-structured fluorenyl group and the second electron transport layer includes a second electron transporting material of a benzimidazole-based compound substituted with at least one anthracenyl group. The first electron transport including the first electron transport material with excellent thermal stability is disposed adjacently to the emitting material layer so that the OLED can maintain good luminescent intensity in an environment of high temperature and implement beneficial luminous properties.

Abstract: An embodiment joint structure includes a first connection link configured to be fixed to one side of a wearer, a second connection link coupled to the first connection link to be rotatable about a first rotation axis, a third connection link coupled to the first connection link to be rotatable about a second rotation axis spaced apart from the first rotation axis, and a fourth connection link, a first side of which is coupled to the second connection link to be rotatable about a third rotation axis and a second side of which is coupled to the third connection link to be rotatable about a fourth rotation axis spaced apart from the third rotation axis, wherein an imaginary first extension axis, an imaginary second extension axis, an imaginary third extension axis, and an imaginary fourth extension axis intersect each other in an intersection area.

Abstract: A resin composition for a semiconductor package according to an embodiment includes a resin composition that is a composite of a resin and a filler disposed in the resin, wherein the filler includes at least one concave portion provided on a surface, wherein a content of the filler has a range of 10 vol. % to 40 vol % of a total volume of the resin composition, and wherein a porosity corresponds to a volume occupied by the concave portion in a total volume of the filler and has a range of 20% to 35%.

Abstract: The present disclosure relates to a computer system for maximizing wireless energy harvesting using an intelligent reflection surface and a method thereof. A multi-path channel including a direct channel through which power is directed from an ET apparatus toward an EU apparatus and a reflection channel through which the power is directed from the ET apparatus toward the EU apparatus after being reflected by an IRS apparatus may be implemented. The computer system may be designed to maximize a gain of the multi-path channel in order to maximize the harvested power.

Abstract: A resin composition for a semiconductor package according to an embodiment includes a resin composition comprising a resin and a filler provided in the resin, wherein the resin includes a soluble liquid crystal polymer resin, and wherein the filler has a negative coefficient of thermal expansion (negative CTE) and is provided in the soluble liquid crystal polymer resin.

Abstract: A circuit board according to an embodiment includes an insulating layer; and a via portion disposed in a via hole formed in the insulating layer; wherein the via portion includes: a first pad disposed on a lower surface of the insulating layer; a second pad disposed on an upper surface of the insulating layer; a third pad disposed in the via hole and disposed on the first pad; and a connection portion disposed in the via hole and disposed between the second pad and the third pad.

Abstract: A circuit board according to one embodiment comprises a first insulation layer, a circuit pattern on the first insulation layer, and a second insulation layer on the circuit pattern, wherein a heat transfer member is arranged inside the first insulation layer and/or the second insulation layer, and the heat transfer member is arranged while coming in contact with a side surface of the insulation layer.

Abstract: A circuit board, according to an embodiment, comprises: a first insulating layer; a second insulating layer disposed on one surface of the first insulating layer; and a third insulating layer disposed on the other surface of the first insulating layer. A circuit pattern is disposed on at least one insulating layer from among the first to third insulating layers, at least one insulating layer from among the first to third insulating layers comprises glass fiber, at least one insulating layer from among the first to third insulating layers does not comprise glass fiber, and the thicknesses of the first to third insulating layers are different from each other.

Abstract: A circuit board according to an embodiment includes an insulating layer; and a circuit pattern disposed on the insulating layer, wherein the circuit pattern includes a copper foil layer disposed on the insulating layer, a first plating layer disposed on the copper foil layer, and a second plating layer disposed on the first plating layer, and wherein the copper foil layer has a thickness in a range of 2 ?m to 5 ?m.

Abstract: An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.

Abstract: A method for fabricating an epi wafer according to the embodiment comprises depositing an epi layer on a wafer in a first chamber; transferring the wafer to a second chamber connected to the first chamber; forming a protective layer on the wafer in the second chamber; and cooling the wafer in the second chamber. Further, an apparatus for fabricating an epi wafer according to the embodiment comprises a first chamber comprising an epi deposition part; a second chamber comprising a protective layer forming part and a cooling part; and a wafer transfer apparatus connected to lower portions of the first chamber and the second chamber.

Abstract: A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate, wherein the epitaxial layer is formed on a surface of the substrate exposed among the patterns. A method for growing a semiconductor crystal comprises the steps of cleaning a silicon carbide substrate; forming patterns on the silicon carbide substrate; and forming an epitaxial layer on the silicon carbide substrate.

Abstract: An apparatus for removing a defect according to the embodiment includes an image processing part for observing a surface of a substrate; a layer forming part for forming a layer on the surface of the substrate; and a humidity controlling part for controlling humidity in a chamber in which the substrate is placed. A method for removing a defect according to the embodiment includes detecting the defect on a surface of a substrate; forming an oxide layer by oxidizing the defect; and removing the oxide layer. A method for removing a defect according to another embodiment includes forming an oxide layer on an entire surface of a substrate; and removing the oxide layer to remove the defect.

Abstract: An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.