Abstract: A photocatalyst, represented by the following general formula (1): X(VO4)6(OH)2??General Formula (1) wherein X represents Za1Tib1 or Za2Tib2Agc2 (where Z is Ca or Sr; a1 is 7.0 to 9.5; b1 is 0.5 to 3.0; a2 is 7.0 to 9.5; b2 is 0.4 to 1.5; c2 is 0.1 to 2.0; a1+b1 is 9.0 to 10.0; and a2+b2+c2 is 9.0 to 10.0) in the general formula (1).

Abstract: A photocatalytic filter including first photocatalytic particles each of which is a composite of an adsorbent and titanium apatite, second photocatalytic particles each of which is glass coated with titanium apatite, a light source configured to emit ultraviolet rays, and a container accommodating the first photocatalytic particles, the second photocatalytic particles, and the light source.

Abstract: A non-transitory computer-readable recording medium having stored therein an abnormality detection program for causing a computer to execute a process, the process includes referring to a storage that stores a plurality of determination criteria for each of processes based on a rotation frequency of the rotating part and harmonic frequencies of the rotation frequency in each of a plurality of processes, the rotation frequency and the harmonic frequencies of the rotation frequency being specified from a frequency spectrum of vibration data obtained by measuring, by a sensor, vibration of a monitoring target device that executes the plurality of processes in a predetermined order by using a rotating part that rotates, and detecting occurrence of an abnormality of the monitoring target device from the vibration data measured by the sensor based on the predetermined order and the plurality of determination criteria for each of the processes.

Abstract: A photocatalytic filter including first photocatalytic particles each of which is a composite of an adsorbent and titanium apatite, second photocatalytic particles each of which is glass coated with titanium apatite, a light source configured to emit ultraviolet rays, and a container accommodating the first photocatalytic particles, the second photocatalytic particles, and the light source.

Abstract: An intraoral fixing composition, containing: titanium apatite, which is obtained by substituting part of calcium in calcium hydroxyapatite with titanium, wherein the intraoral fixing composition is fixed at an intraoral site in an unreleasable state.

Abstract: A photocatalyst, represented by the following general formula (1): X(VO4)6(OH)2??General Formula (1) wherein X represents Za1Tib1 or Za2Tib2Agc2 (where Z is Ca or Sr; a1 is 7.0 to 9.5; b1 is 0.5 to 3.0; a2 is 7.0 to 9.5; b2 is 0.4 to 1.5; c2 is 0.1 to 2.0; a1+b1 is 9.0 to 10.0; and a2+b2+c2 is 9.0 to 10.0) in the general formula (1).

Abstract: A photocatalyst, which includes X.titanium hydroxyapatite doped with silver, where the X is an alkaline earth metal having an atomic number equal to or higher than that of calcium. A photocatalyst, which includes calcium.titanium hydroxyapatite, in which at least part of the calcium is substituted with an alkaline earth metal having an atomic number equal to or higher than that of strontium.

Abstract: A magneto-resistive effect element is provided with a first soft magnetic layer, a magneto-resistive effect film formed directly on the first soft magnetic layer. and a second soft magnetic layer formed on the magneto-resistive effect film. The magneto-resistive effect element is configured as allowing electric current to flow in the thickness-wise direction. The first soft magnetic layer is composed of columnar crystals. The magneto-resistive effect film has an anti-ferromagnetic layer. The anti-ferromagnetic layer is formed directly on the first soft magnetic layer.

Abstract: A magnetic recording medium having a first lubricant layer formed on the surface thereof and a gas sensor are disposed in a housing. The gas sensor detects gas by adsorbing the gas on a detection surface thereof The detection surface is formed with a second lubricant layer made of the same lubricant agent as that of the first lubricant layer.

Abstract: After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Abstract: There are provided an apparatus for evaluating a piezoelectric film, which contains: a detection unit containing a pair of probes, each probe containing a cantilever and a probe tip; and an evaluation unit, wherein the detection unit is configured to respectively place the probe tips on both surfaces of a sample comprising a piezoelectric film so as to detect a displacement magnitude of the pair of probes, and the evaluation unit is configured to evaluate either or both a deformation and a displacement of the piezoelectric film based upon the detected displacement magnitude of the pair of probes, and a method for evaluating a piezoelectric film by using the apparatus for evaluating a piezoelectric film.

Abstract: An alignment control film is formed on an alumina film by sputtering. A Ti film, a Ta film, a Ru film, a MgO film or the like is formed as the alignment control film. A lower shield layer is formed on the alignment control film. Crystal grains composing the lower shield layer will be of a columnar crystal grains. The lower shield layer will have the (111) surface exposed to the surface thereof when a Ti film, a Ta film or a Ru film is formed as the alignment control film, whereas the lower shield layer will have the (100) surface exposed to the surface thereof when a MgO film is formed as the alignment control film. A GMR film is then formed on the lower shield layer. The GMR film is formed by first allowing an anti-ferromagnetic film to epitaxially grow on the lower shield layer. The anti-ferromagnetic film will have also the (111) surface or the (100) surface reflecting the crystal structure of the lower shield layer.

Abstract: There are provided an apparatus for evaluating a piezoelectric film, which contains: a detection unit containing a pair of probes, each probe containing a cantilever and a probe tip; and an evaluation unit, wherein the detection unit is configured to respectively place the probe tips on both surfaces of a sample comprising a piezoelectric film so as to detect a displacement magnitude of the pair of probes, and the evaluation unit is configured to evaluate either or both a deformation and a displacement of the piezoelectric film based upon the detected displacement magnitude of the pair of probes, and a method for evaluating a piezoelectric film by using the apparatus for evaluating a piezoelectric film.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: The present invention aims to provide an IC card, requiring no special additional devices, not causing a liquid leakage of an aqueous electrolyte, requiring no battery, and capable of displaying information easily and cheaply by internally generated electric power and remaining the information even after the voltage is stopped applying. An IC card of the present invention has an electric power generator capable of generating electric power by an external stimulus and a display driven by the generated electric power so as to display information. The IC card of the present invention preferably have aspects of that the electric power generator is a piezoelectric transducer, a nonvolatile memory for storing information displayed on the display is provide, the nonvolatile memory is a ferroelectric memory, the display is formed by an electrochromic display device, and the electrochromic display device is an all solid-state electrochromic display device.

Abstract: A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

Abstract: After placing a sample in a heating vacuum chamber, a probe is climbed down to a position above a capacitor formed in the sample whose electrical characteristic is supposed to be measured. The probe is contacted with both electrodes of the capacitor, which is confirmed by electrical measurement. In order to measure capacitance loss, after filling N2 gas up in the heating vacuum chamber, a mixed gas is introduced from a line for 3 vol % H2+97 vol % N2 to the inside of the heating vacuum chamber. After pressure has been stabilized there, capacitance loss and lapsed time are measured at the same time. Concentrations of residual H2O and residual O2 in the heating vacuum chamber are measured by a quadrupole mass spectrometer QMS; and at the same time, concentrations of each of residual H2O and residual O2 in an exhaust gas are measured by sensors.