Abstract: A self-aligned plug may be formed between deep trench isolation (DTI) etching cycles. Accordingly, etch depth in areas of a pixel sensor with large CDs (e.g., at an X-road) is reduced, which prevents trench loading. As a result, a floating diffusion (FD) region, associated with photodiodes of the pixel sensor, is not damaged during the DTI etching cycles. Reduced chances of damage to the FD region improves performance of the pixel sensor and prevents electrical shorts and failures, which increases yield and conserves time and raw materials used in forming the pixel sensor.

Abstract: A high electron mobility transistor includes a substrate. A first III-V compound layer is disposed on the substrate. A second III-V compound layer is embedded within the first III-V compound layer. A P-type gallium nitride gate is embedded within the second III-V compound layer. A gate electrode is disposed on the second III-V compound layer and contacts the P-type gallium nitride gate. A source electrode is disposed at one side of the gate electrode. A drain electrode is disposed at another side of the gate electrode.

Abstract: The present invention discloses a semiconductor structure with an epitaxial layer, including a substrate, a blocking layer on said substrate, wherein said blocking layer is provided with predetermined recess patterns, multiple recesses formed in said substrate, wherein each of said multiple recesses is in 3D diamond shape with a centerline perpendicular to a surface of said substrate, a buffer layer on a surface of each of said multiple recesses, and an epitaxial layer comprising a buried portion formed on said buffer layer in each of said multiple recesses and only one above-surface portion formed directly above said blocking layer and directly above said recess patterns of said blocking layer, and said above-surface portion directly connects said buried portion in each of said multiple recesses, and a first void is formed inside each of said buried portions of said epitaxial layer in said recess.

Abstract: The present invention discloses a semiconductor structure with an epitaxial layer, including a substrate, a blocking layer on said substrate, wherein said blocking layer is provided with predetermined recess patterns, multiple recesses formed in said substrate, wherein each of said multiple recesses is in 3D diamond shape with a centerline perpendicular to a surface of said substrate, a buffer layer on a surface of each of said multiple recesses, and an epitaxial layer comprising a buried portion formed on said buffer layer in each of said multiple recesses and only one above-surface portion formed directly above said blocking layer and directly above said recess patterns of said blocking layer, and said above-surface portion directly connects said buried portion in each of said multiple recesses, and a first void is formed inside each of said buried portions of said epitaxial layer in said recess.

Abstract: The present invention discloses a semiconductor structure with an epitaxial layer and method of manufacturing the same. The semiconductor structure with the epitaxial layer includes a substrate, a blocking layer on the substrate, multiple recesses formed in the substrate, wherein the recess extends along <111> crystal faces of the substrate, and an epitaxial layer on the blocking layer, wherein the epitaxial layer is provided with a buried portion in each recess and an above-surface portion formed on the blocking layer.

Abstract: A semiconductor epitaxial structure with reduced defects, including a substrate with a recess formed thereon, an island insulator on a bottom surface of the recess, spacers on sidewalls of the recess, a buffer layer in the recess and covering the island insulator, a channel layer in the recess and on the buffer layer, and a barrier layer in the recess and on the channel layer, wherein two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) is formed in the channel layer.

Abstract: The present invention discloses a semiconductor structure with an epitaxial layer and method of manufacturing the same. The semiconductor structure with the epitaxial layer includes a substrate, a blocking layer on the substrate, multiple recesses formed in the substrate, wherein the recess extends along <111> crystal faces of the substrate, and an epitaxial layer on the blocking layer, wherein the epitaxial layer is provided with a buried portion in each recess and a surface portion formed on the blocking layer.

Abstract: Semiconductor packages are provided. One of the semiconductor packages includes a first sub-package and a second sub-package. The first sub-package includes a first die, a graphite oxide layer on the first die and an encapsulant encapsulating the first die and the graphite oxide layer. The second sub-package is stacked on and electrically connected to the first sub-package, and includes a second die. The graphite oxide layer is disposed between the first die and the second die.

Abstract: Semiconductor packages are provided. One of the semiconductor packages includes a first sub-package and a second sub-package. The first sub-package includes a first die, a graphite oxide layer on the first die and an encapsulant encapsulating the first die and the graphite oxide layer. The second sub-package is stacked on and electrically connected to the first sub-package, and includes a second die. The graphite oxide layer is disposed between the first die and the second die.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a second gradient layer, and a gate. The first gradient layer is disposed on the substrate. The two source/drain structures are separately disposed on the first gradient layer. The second gradient layer is disposed on the two source/drain structures and the first gradient layer, and a second portion of the second gradient layer directly contacts a first portion of the first gradient layer. The gate is disposed on the second gradient layer, between the two source/drain structures.

Abstract: Provided is a semiconductor structure including a substrate, a first semiconductor layer, a second semiconductor layer, a gate electrode, a source electrode and a drain electrode. The first semiconductor layer contains a group III-V-VI semiconductor compound layer and is disposed on the substrate. The second semiconductor layer includes a group III-V semiconductor compound and is disposed on the first semiconductor layer. The gate electrode is disposed on the second semiconductor layer. The source electrode and the drain electrode are disposed on the second semiconductor layer beside the gate electrode.

Abstract: A method for treating a glycoprotein-related disease is disclosed, which comprises: administering a first effective amount of phenol red and a second effective amount of an organic arsenic compound to a subject in need thereof.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first gradient layer, two source/drain structures, a second gradient layer, and a gate. The first gradient layer is disposed on the substrate. The two source/drain structures are separately disposed on the first gradient layer. The second gradient layer is disposed on the two source/drain structures and the first gradient layer, and a second portion of the second gradient layer directly contacts a first portion of the first gradient layer. The gate is disposed on the second gradient layer, between the two source/drain structures.

Abstract: The present disclosure illustrates a microgroove structure for controlling frost nucleation, and the microgroove structure has a substrate which has a non-rough surface. The non-rough surface has one or more microgrooves extending along a first direction. The microgroove structure for controlling frost nucleation has nice anti-icing and deicing performances.

Abstract: A method for treating a glycoprotein-related disease is disclosed, which comprises: administering a first effective amount of phenol red and a second effective amount of an organic arsenic compound to a subject in need thereof.

Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.

Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.

Abstract: A method for treating a glycoprotein-related disease is disclosed, which comprises: administering a first effective amount of phenol red and a second effective amount of an organic arsenic compound to a subject in need thereof.

Abstract: A method for treating a glycoprotein-related disease is disclosed, which comprises: administering a first effective amount of phenol red and a second effective amount of an organic arsenic compound to a subject in need thereof.

Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.