Abstract: A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.

Abstract: A user equipment (UE) includes one or more non-transitory computer-readable media containing computer-executable instructions embodied therein, and at least one processor coupled to the one or more non-transitory computer-readable media. The at least one processor configured to execute the computer-executable instructions to receive downlink control information (DCI) on a downlink (DL) channel of a non-terrestrial network (NTN), the DL channel reception ending in a first slot, and transmit an uplink (UL) transmission on a UL channel of the NTN in a second slot. The second slot is separate from the first slot by a timing offset, where a duration of the timing offset is dependent on a type of the UL transmission and a numerology of the UL transmission.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metal

Abstract: The disclosure provides a coffee machine. The machine includes a main housing, wherein the main housing has: a coffee bean silo; a bean grinding assembly, wherein the bean grinding assembly is connected with a bean outlet of the coffee bean silo; a boiler piston assembly including a coffee machine boiler, a bag pressing mechanism and an ejector mechanism, wherein the coffee machine boiler is connected with a material outlet of the bean grinding assembly, the bag pressing mechanism includes a bag pressing block that is connected with a piston assembly, wherein the piston assembly can drive the bag pressing block to perform bag pressing on coffee in the coffee machine boiler, the ejector mechanism can eject a coffee cake in the coffee machine boiler after the coffee extraction is completed; a coffee grounds box; water tank; a waterway switching mechanism; and a coffee dispensing spout.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A monitoring system based on a digital converter station includes a first monitoring terminal deployed at a first-level monitoring side, a second monitoring terminal deployed at a second-level monitoring side, and a third monitoring terminal deployed at a third-level monitoring side; the monitoring terminal at each level includes a communication module, a human-machine interaction module, a device status monitoring module, a device alarm management module, a video fusion processing module, and a data transmission adjustment and control module.

Abstract: The disclosure provides a data privacy protection method, a server device, and a client device for federated learning. A public dataset is used to perform model training on a machine learning model by a server device to generate a gradient pool including multiple first gradients. The gradient pool and the machine learning model are received by a client device. The client device uses a local dataset to perform model training on the machine learning model to obtain a second gradient. A local gradient is selected from the first gradients in the gradient pool according to the second gradient using a differential privacy algorithm by the client device. An aggregated machine learning model is generated by performing model aggregation based on the local gradient by the server device.

Abstract: A method of object status detection for objects supported by a shelf, from shelf image data, includes: obtaining a plurality of images of a shelf, each image including an indication of a gap on the shelf between the objects; registering the images to a common frame of reference; identifying a subset of the gaps having overlapping locations in the common frame of reference; generating a consolidated gap indication from the subset; obtaining reference data including (i) identifiers for the objects and (ii) prescribed locations for the objects within the common frame of reference; based on a comparison of the consolidated gap indication with the reference data, selecting a target object identifier from the reference data; and generating and presenting a status notification for the target product identifier.

Abstract: The present disclosure provides a smart connection device, a jump starter and a battery clamp. The smart connection device includes a power connection terminal coupled to an energy storage module, a load connection terminal coupled to an external load, a switch element, a power supply loop, and a reverse connection detection module. The reverse connection detection module outputs a first control signal to the power supply loop, when the external load is reversely coupled to the load connection terminal. The power supply loop is in a disconnection state and supplies no power to the switch element when it receives the first control signal. The switch element is in an off state when it receives no power supply, to make the power connection terminal and the load connection terminal be in a disconnection state, thereby preventing the energy storage module from providing a discharge output to the external load.

Abstract: Disclosed is a diamine compound represented by Formula (1), in which R1, R2, R3, R4, R5, X1, X2, X3, X4, m, n, a, b, c, and d are as defined herein. Also disclosed are a method for manufacturing the diamine compound, a composition including the diamine compound having a (chain alkoxy-methylene) phenyl group or a (hydroxyl-methylene) phenyl group, and a polymer including the (chain alkoxy-methylene) phenyl group or the (hydroxyl-methylene) phenyl group.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: An electronic device includes a substrate, a driving element, a first insulating layer, a pixel electrode layer, and a common electrode layer. The driving element is disposed on the substrate. The first insulating layer is disposed on the driving element. The pixel electrode layer is disposed on the first insulating layer. The first insulating layer comprises a hole, and the pixel electrode layer is electrically connected to the driving element through the hole. The common electrode layer is disposed on the pixel electrode layer. The common electrode layer comprises a slit, and the slit has an edge, and the edge is disposed in the hole.

Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: A semiconductor may include an active region, an epitaxial source/drain formed in and extending above the active region, and a first dielectric layer formed over a portion of the active region. The semiconductor may include a first metal gate and a second metal gate formed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer and the second metal gate, and a titanium layer, without an intervening fluorine residual layer, formed on the metal gate and the epitaxial source/drain. The semiconductor may include a first metal layer formed on top of the titanium on the first metal gate, a second metal layer formed on top of the titanium layer on the epitaxial source/drain, and a third dielectric layer formed on the second dielectric layer. The semiconductor may include first and second vias formed in the third dielectric layer.

Abstract: A method includes: obtaining impact values for characteristic conditions; selecting training data subsets respectively from training data sets according to the impact values; obtaining a candidate model and an evaluation value based on the training data subsets; supplementing the training data subsets according to the impact values; obtaining another candidate model and another evaluation value based on training data subsets thus supplemented; repeating the step of supplementing the training data subset, and the step of obtaining another candidate model and another evaluation value based on the training data subsets thus supplemented; and selecting one of the candidate models as a prediction model based on the evaluation values.

Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: An electronic device including a protective substrate is provided. The protective substrate includes a substrate and an anti-reflection layer. The anti-reflection layer is disposed on the substrate. The anti-reflection layer includes a first sublayer to an nth sublayer sequentially arranged on the substrate, where n is greater than 1, and a product range of a thickness and a refractive index of the nth sublayer ranges from 100 nm to 170 nm.