Abstract: An integrated over-current protection device includes a positive temperature coefficient (PTC) component, a first conductive unit, a second conductive unit, a first conductive via, and a second conductive via. The PTC component includes a first PTC body, and has opposing first and second surfaces. The first conductive unit is disposed on the first surface, and includes a first electrode and a first conductive pad electrically insulated from the first electrode. The second conductive unit is disposed on the second surface, and includes a second electrode and a second conductive pad electrically insulated from the second electrode. The first conductive via extends through the first conductive unit and the PTC component to electrically connect the first electrode to the second conductive pad. The second conductive via extends through the second conductive unit and the PTC component to electrically connect the second electrode to the first conductive pad.

Abstract: A semiconductor package includes a first semiconductor die and a second semiconductor die disposed laterally adjacent one another. The semiconductor package includes a semiconductor bridge overlapping a first corner of the first semiconductor die and a second corner of the second semiconductor die. The semiconductor bridge electrically couples the first semiconductor to the second semiconductor die. The semiconductor package includes a third semiconductor die and a fourth semiconductor die electrically coupled to the first semiconductor die and the second semiconductor die, respectively. The semiconductor bridge is interposed between the third semiconductor die and the fourth semiconductor die.

Abstract: A semiconductor device package is disclosed. The semiconductor device package includes a carrier, a first electronic component disposed on the carrier and a support component disposed on the carrier. The semiconductor device package also includes a second electronic component disposed on the first electronic component and supported by the support component.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Abstract: A semiconductor device package includes a first redistribution layer (RDL), a first die, a second die, a second RDL and an encapsulant. The first die is disposed on the first RDL and is electrically connected to the first RDL. The first die has a first electrical contact. The second die is disposed on the first RDL and is electrically connected to the first RDL. The second die has a first electrical contact. The second RDL is surrounded by the first RDL. The second RDL has a first electrical contact electrically connected to the first electrical contact of the first die and a second electrical contact electrically connected to the first electrical contact of the second die. A size of the first electrical contact of the second RDL is greater than a size of the second electrical contact of the second RDL.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Abstract: A semiconductor device package includes a first redistribution layer (RDL), a first die, a second die, a second RDL and an encapsulant. The first die is disposed on the first RDL and is electrically connected to the first RDL. The first die has a first electrical contact. The second die is disposed on the first RDL and is electrically connected to the first RDL. The second die has a first electrical contact. The second RDL is surrounded by the first RDL. The second RDL has a first electrical contact electrically connected to the first electrical contact of the first die and a second electrical contact electrically connected to the first electrical contact of the second die. A size of the first electrical contact of the second RDL is greater than a size of the second electrical contact of the second RDL.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Abstract: A substrate structure is provided. The substrate structure includes a number of traces, a substrate core, a number of first metal tiles, a number of second metal tiles, a number of first electrically-functioning circuits, and a number of second electrically-functioning circuits. The substrate core has a first surface and a second surface opposite to the first surface. The traces, the first metal tiles, and the first electrically-functioning circuits are disposed on the first surface and add up to a first metal structure proportion, and the second metal tiles and the second electrically-functioning circuits are disposed on the second surface and add up to a second metal structure proportion. The difference between the first metal structure proportion and the second metal structure proportion is within 15%.

Abstract: An embedded component device includes an electronic component including an electrical contact, an upper patterned conductive layer, a dielectric layer between the upper patterned conductive layer and the electronic component, a first electrical interconnect, a lower patterned conductive layer, a conductive via, and a second electrical interconnect. The dielectric layer has a first opening exposing the electrical contact, and a second opening extending from the lower patterned conductive layer to the upper patterned conductive layer. The first electrical interconnect extends from the electrical contact to the upper patterned conductive layer, and fills the first opening. The second opening has an upper portion exposing the upper patterned conductive layer and a lower portion exposing the lower patterned conductive layer. The conductive via is located at the lower portion of the second opening. The second electrical interconnect fills the upper portion of the second opening.

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract: The semiconductor package includes a substrate, a plurality of components, an interposer, an electrical interconnect and a first package body. The substrate has a first surface and a second surface opposite to the first surface. A first component is mounted on the first surface of the substrate, and a second component is mounted on the second surface of the substrate. The interposer has a first surface. The electrical interconnect connects the first surface of the interposer to the second surface of the substrate. The first package body is disposed on the second surface of the substrate and encapsulates the second component, the electrical interconnect and at least a portion of the interposer.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a dielectric layer, a circuit layer, a first protection layer and a plurality of conductive posts. The dielectric layer has a first surface and a second surface that are opposite to each other. The circuit layer is embedded in the dielectric layer and is exposed from the first surface. The first protection layer covers a portion of the first circuit layer and defines a plurality of holes that expose a remaining portion of the first circuit layer. The conductive posts are formed in the holes.

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract: A substrate structure is provided. The substrate structure includes a number of traces, a substrate core, a number of first metal tiles, a number of second metal tiles, a number of first electrically-functioning circuits, and a number of second electrically-functioning circuits. The substrate core has a first surface and a second surface opposite to the first surface. The traces, the first metal tiles, and the first electrically-functioning circuits are disposed on the first surface and add up to a first metal structure proportion, and the second metal tiles and the second electrically-functioning circuits are disposed on the second surface and add up to a second metal structure proportion. The difference between the first metal structure proportion and the second metal structure proportion is within 15%.

Abstract: A substrate structure and a package structure using the same are provided. The substrate structure includes a number of traces, a substrate core and a number of first metal tiles. The substrate core has a first surface and a second surface opposite to the first surface. The first metal tiles are disposed on one of the first surface and the second surface, the minimum pitch between adjacent two of the first metal tiles is the minimum process pitch.

Abstract: A multilayer substrate includes a first outer conductive patterned layer, a first insulating layer exposing a portion of the first outer conductive patterned layer to define a first set of pads, a second outer conductive patterned layer, and a second insulating layer exposing a portion of the second outer conductive patterned layer to define a second set of pads. The multilayer substrate further includes inner layers each with an inner conductive patterned layer, multiple inner conductive posts formed adjacent to the inner conductive patterned layer, and an inner dielectric layer, where the inner conductive patterned layer and the inner conductive posts are embedded in the inner dielectric layer, and a top surface of each of the inner conductive posts is exposed from the inner dielectric layer.

Abstract: A semiconductor package includes a substrate unit, a die electrically connected to first contact pads, and a package body covering a first patterned conductive layer and the die. The substrate unit includes: (1) the first patterned conductive layer; (2) a first dielectric layer exposing a part of the first patterned conductive layer to form the first contact pads; (3) a second patterned conductive layer; (4) a second dielectric layer defining openings extending from the first patterned conductive layer to the second patterned conductive layer, where the second patterned conductive layer includes second contact pads exposed by the second dielectric layer; and (5) conductive posts extending from the first patterned conductive layer to the second contact pads through the openings, each of the conductive posts filling a corresponding one of the openings. At least one of the conductive posts defines a cavity.