Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A server information handling system is secured by a bezel that couples to an access location, such as an air vent at a front or rear face of a housing. The bezel includes a security structure having a lock and configured to couple directly at the front face or with a bezel extension at the rear face so that the server information handling system can use the same bezel with both a front face or rear face rack mount. The bezel has a lock integrated with the security structure, an air filter that fits over the security structure to filter air flowing into the housing, and a filter brace that captures the air filter by coupling to the security structure over the air filter. The filter brace attaches and detaches at the security structure when the security structure locks a server information handling system housing so that the air filter can be changed while the housing remains secure.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: An electronic device includes a first substrate structure, multiple electronic elements and a second substrate structure. The first substrate structure includes a first substrate. The electronic elements are disposed on the first substrate. The second substrate structure is coupled to the first substrate structure. The second substrate structure includes a second substrate, a protection circuit, a driving circuit and a bonding pad. The protection circuit is disposed on the second substrate. The driving circuit is disposed on the second substrate and configured to drive at least a part of the electronic elements. The bonding pad is disposed on the second substrate. The protection circuit is respectively coupled to the bonding pad and the driving circuit. The electronic device may reduce the damage caused by electrostatic discharge or reduce the impact of the bonding process of the bonding pad on signal conduction.

Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: A semiconductor package includes a conductive pillar and a solder. The conductive pillar has a first sidewall and a second sidewall opposite to the first sidewall, wherein a height of the first sidewall is greater than a height of the second sidewall. The solder is disposed on and in direct contact with the conductive pillar, wherein the solder is hanging over the first sidewall and the second sidewall of conductive pillar.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: A computer system and a processing method thereof of sound signal are provided. The computer system includes a platform path controller (PCH), a high-definition audio (HDA) codec, and a digital microphone. The HDA codec is coupled to the PCH. The digital microphone is coupled to the PCH and the HDA codec. The digital microphone is used to generate sound signal. The HDA codec processes the sound signal from the digital microphone. Accordingly, the audio recording with high quality could be provided.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: A marking method on image combined with sound signal, a terminal apparatus, and a server are provided. In the method, a first image is displayed. A selection command is detected. A target sound signal is embedded into a speech signal so as to generate a combined sound signal. The combined sound signal is transmitted. The selection command corresponds to a target region in the first image, and the selection command is generated selecting the target region through an input operation. The target sound signal corresponds to the target region of the selection command, and the speech signal is obtained by receiving sound. Accordingly, all attendants in the video conference are able to make makings on a shared screen.

Abstract: A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Abstract: An amplifier DC bias protection circuit includes an amplifier module, a filter module and a comparator module. The amplifier module converts an input signal into a non-inverting signal and an inverting signal. The filter module blocks AC signals in the non-inverting signal and the inverting signal, thereby providing a first DC bias signal and a second DC bias signal accordingly. The comparator module is configured to determine whether the absolute value of a DC bias difference signal is greater than a predetermined value, and output a determination signal for deactivating the amplifier module when the absolute value of the DC bias difference signal is greater than the predetermined value. The DC bias difference signal is associated with the voltage difference between the first DC bias signal and the second DC bias signal.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A voltage balance circuit includes a battery module connected to an external power source, a voltage dividing module, a detection module and a control module. The battery module includes a plurality of batteries connected in series. The voltage dividing module includes a plurality of bleeder resistors. Each bleeder resistor is connected with one battery in parallel. The detection module includes a plurality of thermistors, fixation resistances and micro-controllers. Each thermistor is arranged beside one bleeder resistor. Each thermistor is connected with one fixation resistance in series. Each micro-controller is connected with one thermistor and the one fixation resistance. The control module includes a plurality of switches and an analog front end component. Each switch is connected with the one bleeder resistor in series. Each switch is connected to the analog front end component, and the analog front end component is connected to the one micro-controller.

Abstract: A voltage balance circuit includes a battery module connected to an external power source, a voltage dividing module, a detection module and a control module. The battery module includes a plurality of batteries connected in series. The voltage dividing module includes a plurality of bleeder resistors. Each bleeder resistor is connected with one battery in parallel. The detection module includes a plurality of thermistors, fixation resistances and micro-controllers. Each thermistor is arranged beside one bleeder resistor. Each thermistor is connected with one fixation resistance in series. Each micro-controller is connected with one thermistor and the one fixation resistance. The control module includes a plurality of switches and an analog front end component. Each switch is connected with the one bleeder resistor in series. Each switch is connected to the analog front end component, and the analog front end component is connected to the one micro-controller.

Abstract: A treatment model that is a first neural network is trained to optimize a treatment loss function based on a treatment variable t using a plurality of observation vectors by regressing t on x(1),z. The trained treatment model is executed to compute an estimated treatment variable value {circumflex over (t)}i for each observation vector. An outcome model that is a second neural network is trained to optimize an outcome loss function by regressing y on x(2) and an estimated treatment variable t. The trained outcome model is executed to compute an estimated first unknown function value {circumflex over (?)}(xi(2)) and an estimated second unknown function value {circumflex over (?)}(xi(2)) for each observation vector. An influence function value is computed for a parameter of interest using {circumflex over (?)}(xi(2)) and {circumflex over (?)}(xi(2)). A value is computed for the predefined parameter of interest using the computed influence function value.

Abstract: A battery cell module of the present invention includes: a plurality of battery assemblies, each having several battery cells; a flame-retardant unit, covered on an external surface of each of the battery cells; a first bracket, having a first fixation plate in grid pattern, the first fixation plate having a plurality of first containing slots corresponding to the plurality of the battery assemblies; a second bracket, connected with the first bracket and having a second fixation plate in grid pattern, the second fixation plate having a plurality of second containing slots corresponding to the plurality of the first containing slots; wherein an end of each of the battery cells is mounted in each of the plurality of the first containing slots, the other end of each of the battery cells is mounted in each of the plurality of the second containing slots.

Abstract: An insulation resistance measuring device for detecting insulation resistance of an electric vehicle comprises a battery system, a measuring unit, a control unit and a calculation unit. The measuring unit comprises a circuit module comprises a plurality of resistances connected between a positive side and a negative side of the battery system, a first switch, a second switch, and a voltage detecting unit. The first switch is connected between the circuit module and a ground side. The second switch is connected between the circuit module and the negative side. The voltage detecting unit is arranged at a connecting node of the resistances of the circuit module. The control unit is configured to control the first switch and the second switch to turn on or turn off. The calculation unit is configured to calculate a high potential insulation resistance and a low potential insulation resistance of the electric vehicle.

Abstract: An insulation resistance measuring device for detecting insulation resistance of an electric vehicle comprising a battery system, a measuring unit, a control unit and a calculation unit. The measuring unit comprises a circuit module, a first switch, a second switch and a voltage detecting unit. The circuit module comprises a plurality of resistances, which connected between a positive side and a negative side of the battery system. The first switch is connected between the circuit module and a ground side. The second switch is connected between the circuit module and the negative side. The voltage detecting unit is arranged at a connecting node of the resistances of the circuit module. The control unit is configured to control the first switch and the second switch to turn on or turn off. The calculation unit is configured to calculate a high potential insulation resistance and a low potential insulation resistance of the electric vehicle.