Abstract: An electronic device includes a first substrate structure, multiple electronic elements and a second substrate structure. The first substrate structure includes a first substrate. The electronic elements are disposed on the first substrate. The second substrate structure is coupled to the first substrate structure. The second substrate structure includes a second substrate, a protection circuit, a driving circuit and a bonding pad. The protection circuit is disposed on the second substrate. The driving circuit is disposed on the second substrate and configured to drive at least a part of the electronic elements. The bonding pad is disposed on the second substrate. The protection circuit is respectively coupled to the bonding pad and the driving circuit. The electronic device may reduce the damage caused by electrostatic discharge or reduce the impact of the bonding process of the bonding pad on signal conduction.

Abstract: A modulation device includes a substrate, an electrostatic discharge protection element, an electronic element, and a driving element. The substrate has an active region. The electrostatic discharge protection element is arranged around the active region. The electronic element is disposed in the active region. The driving element is electrically connected to the electronic element.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.

Abstract: An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: The present disclosure provides an electronic device including a substrate, a common electrode, and a plurality of pixels. The common electrode is disposed on the substrate. The pixels are disposed on the substrate, and at least one of the pixels includes a thin film transistor, a first electrode, a second electrode, and an auxiliary electrode. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is partially overlapped with the first electrode in a top view direction of the electronic device. The auxiliary electrode is electrically connected to the common electrode and electrically isolated from the first electrode, and the first electrode and the auxiliary electrode have a minimum distance less than a minimum distance between the first electrode and the common electrode.

Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.

Abstract: A driving circuit includes a first transistor, a second transistor and a third transistor. The first transistor has a first terminal connected to a first voltage level, a second terminal, and a third terminal. The second transistor has a first terminal connected to the second terminal of the first transistor, a second terminal connected to a second voltage level, and a third terminal connected to the third terminal of the first transistor. The third transistor has a first terminal connected to the first terminal of the second transistor. The first transistor and the second transistor are low temperature poly-silicon transistors, and the third transistor is an oxide semiconductor transistor.

Abstract: An electronic device including a substrate and a pixel circuit is provided. The substrate includes an active area and a peripheral area. The peripheral area is adjacent to the active area. The pixel circuit is disposed in the active area on the substrate. The pixel circuit includes an amplifier circuit and a tunable element. The amplifier circuit includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The output terminal is electrically connected to the inverting input terminal, so that the amplifier circuit is a negative feedback circuit. The tunable element is electrically connected to the output terminal of the amplifier circuit.

Abstract: An electronic circuit is provided. The electronic circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first compensation transistor, and a second compensation transistor. The first compensation transistor includes a first terminal, a second terminal, and a third terminal. The first terminal of the first compensation transistor is coupled to the second terminal of the first compensation transistor and a first connection node between the first transistor and the second transistor. The third terminal of the first compensation transistor receives one of a scan signal and a reset signal. The second compensation transistor includes a first terminal, a second terminal, and a third terminal. The second terminal of the second compensation transistor is coupled to a second connection node between the third transistor and the fourth transistor. The third terminal of the second compensation transistor receives a reference low voltage signal.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrate.

Abstract: An electronic device is provided. The electronic device includes a detection circuit. The detection circuit includes a programming detection circuit, a light-emitting detection circuit and a determining circuit. The programming detection circuit receives a scan signal, a reset signal and a light-emitting enable signal for a driving circuit of a pixel unit, and provides a first detection signal in a first stage according to the scan signal, the reset signal and the light-emitting enable signal. The light-emitting detection circuit receives the scan signal, the reset signal and the light-emitting enable signal, and provides a second detection signal in a second stage according to the scan signal, the reset signal and the light-emitting enable signal. The determining circuit determines whether to output the light-emitting enable signal to the driving circuit according to the first detection signal and the second detection signal.

Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrates.

Abstract: An operation method of an electronic device for sensing an optical signal is provided. The electronic device includes a plurality of optical sensors and a plurality of light-emitting elements disposed adjacent to the plurality of optical sensors. The operation method of the electronic device for sensing the optical signal includes the following steps. The optical signal is provided to a first optical sensor of the plurality of optical sensors. The first optical sensor outputs a driving signal when dimming the plurality of light-emitting elements adjacent to the first optical sensor. Therefore, the accuracy of sensing the optical signal may be effectively increased.

Abstract: The disclosure provides an electronic device including a pixel circuit and a protection circuit. The pixel circuit includes a driving transistor. The protection circuit includes a first connection transistor, a first switching transistor, and a logic circuit. The first connection transistor is coupled to the driving transistor. The first switching transistor is coupled to the first connection transistor. The logic circuit is coupled to the first switching transistor. The electronic device of the disclosure may provide a pixel protection function through the protection circuit coupled with the pixel circuit.

Abstract: An electronic device includes a substrate, a driving layer, an organic layer and a diode. The driving layer is disposed on the substrate, and the driving layer includes a thin film transistor. The organic layer is disposed on the driving layer, and the organic layer includes a through hole portion. The diode is disposed on the organic layer and overlapped with the through hole portion, the diode is electrically connected to the driving layer by a bonding pad overlapped with the through hole portion, and the diode is not overlapped with the thin film transistor.

Abstract: A light emitting device includes a semiconductor stack, and an insulating layer partially covering the semiconductor stack. The semiconductor stack includes a first conductivity type semiconductor layer, a light emitting layer and a second conductivity type semiconductor layer that are stacked in sequence. A reflective layer is disposed in the insulating layer, and includes a metal reflective layer and an anti-oxidation layer stacked one on top of the other. A light emitting apparatus is also disclosed.

Abstract: An electronic device including a light emitting unit and a voltage comparator is provided. The voltage comparator is coupled to the light emitting unit and configured to receive a first voltage and a second voltage. When the first voltage is greater than the second voltage, the voltage comparator outputs a comparison signal having a first voltage level to turn on the light emitting unit. When the first voltage is less than the second voltage, the voltage comparator outputs a comparison signal having a second voltage level to turn off the light emitting unit.