Abstract: A method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.

Abstract: An apparatus is provided. The apparatus includes a laser generation device configured to emit a laser signal to a semiconductor fabrication component. The apparatus includes a reflection detection device configured to receive a reflection signal comprising light, of the laser signal, reflected by a surface of the semiconductor fabrication component. The reflection detection device includes an optical filter. The optical filter is configured to block light, of the reflection signal, that has a wavelength outside a defined range of wavelengths. The optical filter is configured to provide filtered light, from the reflection signal, that has a wavelength within the defined range of wavelengths. The reflection detection device includes a light sensor configured to generate an electrical signal based upon the filtered light. The apparatus includes a computer configured to determine, based upon the electrical signal, measures of electrostatic field strength at the surface of the semiconductor fabrication component.

Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.

Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.

Abstract: An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.

Abstract: An electrostatic detecting system and an electrostatic detecting method for detecting the static electricity generated at an active surface of a substrate are provided. The electrostatic detecting system includes a sensing apparatus and a signal processing apparatus. The sensing apparatus is disposed at least adjacent to a back surface opposite to the active surface of the substrate, for measuring the static electricity generated at the active surface and generating an initial electric signal. The signal processing apparatus is electrically connected to the sensing apparatus, for receiving the initial electric signal and correcting the initial electric signal based on a voltage compensation value to obtain a final electric signal.

Abstract: A magnetic separator including a magnetic structure is provided. The magnetic structure includes magnetic structure units. The magnetic structure units form at least one continuous fluid channel. Each of the magnetic structure units has at least one protrusion. The magnetic structure has the protrusions facing towards each other between at least a portion of the adjacent two magnetic structure units.

Abstract: An electrostatic detecting system and an electrostatic detecting method for detecting the static electricity generated at an active surface of a substrate are provided. The electrostatic detecting system includes a sensing apparatus and a signal processing apparatus. The sensing apparatus is disposed at least adjacent to a back surface opposite to the active surface of the substrate, for measuring the static electricity generated at the active surface and generating an initial electric signal. The signal processing apparatus is electrically connected to the sensing apparatus, for receiving the initial electric signal and correcting the initial electric signal based on a voltage compensation value to obtain a final electric signal.

Abstract: A magnetic separator including a magnetic structure is provided. The magnetic structure includes magnetic structure units. The magnetic structure units form at least one continuous fluid channel. Each of the magnetic structure units has at least one protrusion. The magnetic structure has the protrusions facing towards each other between at least a portion of the adjacent two magnetic structure units.

Abstract: An electromagnetic interference (EMI) shielding device and manufacturing method thereof are provided. The EMI shielding device includes at least one ferrite material outer layer, a first and a second electrodes within the ferrite material outer layer, and a positive temperature coefficient resistor (PTCR) core layer sandwiched between the first and the second electrodes in the ferrite material outer layer. The first and the second electrodes extend to two ends of the ferrite material outer layer respectively.

Abstract: An electromagnetic interference (EMI) shielding device and manufacturing method thereof are provided. The EMI shielding device includes at least one ferrite material outer layer, a first and a second electrodes within the ferrite material outer layer, and a positive temperature coefficient resistor (PTCR) core layer sandwiched between the first and the second electrodes in the ferrite material outer layer. The first and the second electrodes extend to two ends of the ferrite material outer layer respectively.

Abstract: The present invention relates to a phototherapy device, which is driven by a power supply and includes: a housing, having a top portion, a bottom portion and a handheld portion, where the top portion has a light outlet, the handheld portion connects the top portion and the bottom portion, and the handheld portion has at least one protruding part; a light-transmitting plate, which covers the light outlet; a light-blocking part, formed into a protruding rim along the circumferential direction of the light outlet; an LED module, disposed in the housing and corresponding to the light outlet; and a control module, electrically connected to the power supply and the LED module. Accordingly, the phototherapy device according to the present invention is suitable for handheld use.