Patents by Inventor Ming-Fu Lai
Ming-Fu Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170381Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: ApplicationFiled: February 1, 2024Publication date: May 23, 2024Inventors: Chun-Hsien HUANG, Peng-Fu HSU, Yu-Syuan CAI, Min-Hsiu HUNG, Chen-Yuan KAO, Ken-Yu CHANG, Chun-I TSAI, Chia-Han LAI, Chih-Wei CHANG, Ming-Hsing TSAI
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11003460Abstract: A control method of a memory storage device is provided and includes: detecting a first signal stream controlled by a host system; executing a boot code according to the first signal stream and entering a boot code mode; and receiving a command from the host system in the boot code mode and not executing a firmware code stored in a rewritable non-volatile memory module in the memory storage device. According, operational flexibility of the memory storage device may be enhanced.Type: GrantFiled: August 29, 2017Date of Patent: May 11, 2021Assignee: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Ying-Fu Chao, Chao-Ta Huang, Chun-Yu Ling
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Publication number: 20190012180Abstract: A control method of a memory storage device is provided and includes: detecting a first signal stream controlled by a host system; executing a boot code according to the first signal stream and entering a boot code mode; and receiving a command from the host system in the boot code mode and not executing a firmware code stored in a rewritable non-volatile memory module in the memory storage device. According, operational flexibility of the memory storage device may be enhanced.Type: ApplicationFiled: August 29, 2017Publication date: January 10, 2019Applicant: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Ying-Fu Chao, Chao-Ta Huang, Chun-Yu Ling
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Patent number: 9778880Abstract: A memory control circuit unit, a memory storage device and a data transmitting method are provided. The memory storage device coupled to a first host system includes a reset pin. The memory control circuit unit of the memory storage device includes a pulse pattern detector. The reset pin is coupled to a second host system and is configured to receive a first pulse signal from the second host system. The pulse pattern detector is coupled to the reset pin, and is configured to determine whether the first pulse signal is conformed to a first predetermined serial pulse pattern or not. If the first pulse signal is conformed to the first predetermined serial pulse pattern, the memory control circuit unit is configured to disable a reset function of the memory storage device.Type: GrantFiled: December 11, 2015Date of Patent: October 3, 2017Assignee: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Rui-Chang Huang
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Publication number: 20170109097Abstract: A memory control circuit unit, a memory storage device and a data transmitting method are provided. The memory storage device coupled to a first host system includes a reset pin. The memory control circuit unit of the memory storage device includes a pulse pattern detector. The reset pin is coupled to a second host system and is configured to receive a first pulse signal from the second host system. The pulse pattern detector is coupled to the reset pin, and is configured to determine whether the first pulse signal is conformed to a first predetermined serial pulse pattern or not. If the first pulse signal is conformed to the first predetermined serial pulse pattern, the memory control circuit unit is configured to disable a reset function of the memory storage device.Type: ApplicationFiled: December 11, 2015Publication date: April 20, 2017Inventors: Ming-Fu Lai, Rui-Chang Huang
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Patent number: 9158476Abstract: An operation mode switching method for a memory storage apparatus, a memory controller and a memory storage apparatus using the method are provided. The operation mode switching method includes receiving at least one access command from a host system and determining whether the access command conforms to a predetermined pattern. If the access command conforms to the predetermined pattern, an operation mode of the memory storage apparatus is switched from a first mode to a second mode. The access command includes a first write command including a write string, and the memory storage apparatus executes an operation corresponding to the write string. Accordingly, the method switches the operation mode of the storage memory apparatus by determining the pattern of the access command, so as to simplify the procedure of switching the operation mode and effectively decrease the probability of switching the operation mode incorrectly.Type: GrantFiled: January 25, 2013Date of Patent: October 13, 2015Assignee: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Kiang-Leong Lau, Yung-Chuan Chen
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Publication number: 20140164680Abstract: An operation mode switching method for a memory storage apparatus, a memory controller and a memory storage apparatus using the method are provided. The operation mode switching method includes receiving at least one access command from a host system and determining whether the access command conforms to a predetermined pattern. If the access command conforms to the predetermined pattern, an operation mode of the memory storage apparatus is switched from a first mode to a second mode. The access command includes a first write command including a write string, and the memory storage apparatus executes an operation corresponding to the write string. Accordingly, the method switches the operation mode of the storage memory apparatus by determining the pattern of the access command, so as to simplify the procedure of switching the operation mode and effectively decrease the probability of switching the operation mode incorrectly.Type: ApplicationFiled: January 25, 2013Publication date: June 12, 2014Applicant: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Kiang-Leong Lau, Yung-Chuan Chen
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Patent number: 8291155Abstract: A data access method for accessing a non-volatile memory module is provided. The data access method includes configuring a plurality of logical addresses and grouping the logical addresses into logical blocks to map to the physical blocks of the non-volatile memory module, and a host system formats the logical addresses into one partition by using a file system and the partition stores at least one file and a file description block corresponding to the file. The data access method further includes searching an end mark corresponding to entry values of the file description block, setting logical addresses storing the end mark as default pattern addresses, and setting values stored in the logical addresses as default values corresponding to the default pattern addresses. Accordingly, the data access method can divide one partition into a write protect area and a writable area by updating data stored in the default pattern addresses.Type: GrantFiled: May 4, 2010Date of Patent: October 16, 2012Assignee: Phison Electronics Corp.Inventors: Ming-Fu Lai, Ying-Fu Chao, Kheng-Chong Tan
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Publication number: 20110231597Abstract: A data access method for accessing a non-volatile memory module is provided. The data access method includes configuring a plurality of logical addresses and grouping the logical addresses into logical blocks to map to the physical blocks of the non-volatile memory module, and a host system formats the logical addresses into one partition by using a file system and the partition stores at least one file and a file description block corresponding to the file. The data access method further includes searching an end mark corresponding to entry values of the file description block, setting logical addresses storing the end mark as default pattern addresses, and setting values stored in the logical addresses as default values corresponding to the default pattern addresses. Accordingly, the data access method can divide one partition into a write protect area and a writable area by updating data stored in the default pattern addresses.Type: ApplicationFiled: May 4, 2010Publication date: September 22, 2011Applicant: PHISON ELECTRONICS CORP.Inventors: Ming-Fu Lai, Ying-Fu Chao, Kheng-Chong Tan