Patents by Inventor MING-HAO CHUANG

MING-HAO CHUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955423
    Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang
  • Patent number: 11923392
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Jen-Cheng Liu, Kazuaki Hashimoto, Ming-En Chen, Shyh-Fann Ting, Shuang-Ji Tsai, Wei-Chieh Chiang
  • Publication number: 20190194786
    Abstract: The present invention discloses a kind of hardfacing alloy, which can be applied onto a workpiece's surface by any one surface treatment process in accordance with material, dimensions, and required properties of the workpiece. For example, this novel hardfacing material can be heated to a fully melted state or a partially melted state by using different types of heat sources, such that the melted hardfacing material can be coated onto the surface of any one workpiece to form a protective layer or a surface modification layer. As a result, the workpiece having the surface coating layer with superior characteristics exhibits outstanding functional performances and has a long service time.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 27, 2019
    Inventors: MING-HAO CHUANG, YUN-SHENG WU, JUNE-LIANG CHU, Dimas Rizky Widagdyo, TIEN-HAO CHANG, SIOU-YU HUANG