Patents by Inventor Ming-Hsing Li

Ming-Hsing Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma generation for ion implanter
    Patent number: 10163609
    Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Min Lin, Ming-Hsing Li, Fang-Chi Chien, Chao-Li Shih, Hong-Hsing Chou
  • PLASMA GENERATION FOR ION IMPLANTER
    Publication number: 20180174807
    Abstract: An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for outputting ions. A vacuum chamber surrounds the dissociation chamber. A plurality of rods or plates of magnetic material are located adjacent to the dissociation chamber on at least two sides of the dissociation chamber. A magnet is magnetically coupled to the plurality of rods or plates of magnetic material. A microwave source is provided for supplying microwaves to the dissociation chamber, so as to cause electron cyclotron resonance in the dissociation chamber to ionize the gas.
    Type: Application
    Filed: March 31, 2017
    Publication date: June 21, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tsung-Min LIN, Ming-Hsing LI, Fang-Chi CHIEN, Chao-Li SHIH, Hong-Hsing CHOU
  • Devices for controlling electron emission in plasma flood system
    Patent number: 6822395
    Abstract: A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.
    Type: Grant
    Filed: September 3, 2002
    Date of Patent: November 23, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Ming-Hsing Li, Min-Tsung Lee, Keneth Lin, Yow-Te Tsai, Huang-Ta Huang, Chao-Chun Chen, Huei-Mei Jao
  • Devices for controlling electron emission in plasma flood system
    Publication number: 20040051465
    Abstract: A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.
    Type: Application
    Filed: September 3, 2002
    Publication date: March 18, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsing Li, Min-Tsung Lee, Kenneth Lin, Yow-Te Tsai, Hung-Ta Huang, Chao-Chun Chen, Huei-Mei Jao