Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: The present disclosure provides a gas sensor. The gas sensor includes a substrate, a conductor layer over the substrate, wherein the conductor layer includes a conductive pattern including a plurality of openings, the openings being arranged in a repeating pattern, an insulating layer in the plurality of openings and over a top surface of the conductive pattern, wherein the conductive pattern is embedded in the insulating layer, and a gas sensing film over a portion of the insulating layer.

Abstract: An intelligent monitoring system for waste disposal and the method thereof are provided, which include a plurality of operational devices and stages. First, a transportation stage is performed to loading a transport vehicle with a waste so as to transport the waste to a disposal station for further treatment. A camera and a sensor for detecting abnormal conditions are installed any one of the operational devices or installed in the operational path of any one of the operational devices. The camera records the videos of the operational stages, captures the images from the videos and recognizes the images in order to determine whether the abnormal conditions occur in any one of the operational stages. Alternatively, the camera is triggered to capture the images and recognize the images after the abnormal conditions are detected by the sensor in order to determine whether the abnormal conditions actually occur.

Abstract: The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, wherein the second semiconductor structure includes a conductive through silicon via, a second bonding dielectric at a back surface of the second semiconductor structure, a second bonding metallization surrounded by the second bonding dielectric and directly contacting the second bonding dielectric, and a conductive through via over a second portion of the first semiconductor structure different from the first portion.

Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A package and a method of forming the same are provided. The package includes: a die stack bonded to a carrier, the die stack including a first integrated circuit die, the first integrated circuit die being a farthest integrated circuit die of the die stack from the carrier, a front side of the first integrated circuit die facing the carrier; a die structure bonded to the die stack, the die structure including a second integrated circuit die, a backside of the first integrated circuit die being in physical contact with a backside of the second integrated circuit die, the backside of the first integrated circuit die being opposite the front side of the first integrated circuit die; a heat dissipation structure bonded to the die structure adjacent the die stack; and an encapsulant extending along sidewalls of the die stack and sidewalls of the heat dissipation structure.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material comprises a primary component of barium titanate (BaTiO3) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite [lithium tantalate (LiTaO3)], barium cerate (BaCeO3), sodium metaniobate [sodium niobate (NaNbO3)] and the combinations thereof.

Abstract: A dielectric ceramic material comprises a primary component of barium titanate (BaTiO3) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite (LiTaO3), barium cerate (BaCeO3), sodium metaniobate (NaNbO3) and the combinations thereof.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material comprises a primary component of barium titanate (BaTiO3) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite [lithium tantalate (LiTaO3)], barium cerate (BaCeO3), sodium metaniobate [sodium niobate (NaNbO3)] and the combinations thereof.

Abstract: A dielectric ceramic material comprises a primary component of barium titanate (BaTiO3) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite (LiTaO3), barium cerate (BaCeO3), sodium metaniobate (NaNbO3) and the combinations thereof.

Abstract: An information processing method is implemented by an information processing system. The system has a media file generator, a GPS recorder and a data processing system. The data processing system obtains media files and creation times from the media file generator and geographical items from the GPS recorder. Since each geographical item includes a recording time, a geographical coordinate, speed and heading, the data processing system simulates a continuous track in time sequence. The data processing system matches the creation time of each media file to the corresponding time on a time base of the continuous track and then determines the corresponding geographical coordinate of each media file to the geographical coordinate of the continuous track corresponding to the matched time.

Abstract: A method of selecting objects in web pages provides users with conveniently selecting objects of interest in a target web page. With the method of the present invention, it is not necessary for the users to either know the makeup language for the web pages or create a program reserved for capturing required contents in the target web page. The method of the present invention provides an easy operational flow for the users to select required contents in the target web page.

Abstract: A method for notifying users of Internet service events has acts of constructing an event notification module, receiving new event data by the at least one Internet service server, determining whether new event data matches notification rules by the at least one Internet service server, sending selected new event data to the event notification module by the at least one Internet service server when the new event data matches the notification rules, creating an event summary page in the event notification module by the event notification module, notifying user from dialing the end user cell phone number with the at least one event notification phone number by the event notification module and hanging up by the event notification module when the end user receives a phone call. Such a method provides a low cost method to notify the users of real-time events of Internet Service.