Abstract: A stacked-chip packaging structure includes chip sets, a heat sink, a substrate, a circuit board, and solder balls. The chip sets are stacked together, each of which has a heat-dissipation structure and a chip. The heat-dissipation structure has a chip recess, through holes arranged in the chip recess, and an extending portion extending from the chip recess. The chip disposed in the chip recess has bumps. Each bump on the chip is correspondingly disposed in one of the through holes of the heat-dissipation structure. The extending portion of the heat-dissipation structure of each chip set contacts that of the neighboring chip set. The heat sink and the substrate are disposed at two opposite sides of the chip sets, respectively. The circuit board is below the substrate. The solder balls are between the circuit board and the substrate.

Abstract: A thermoelectric apparatus includes a first and a second assemblies, at least a first and a second heat conductors. The first assembly includes a first and a second substrates, and several first thermoelectric material sets disposed between the first and second substrates. The first substrate has at least a first through hole. The second assembly includes a third and a fourth substrates, and several second thermoelectric material sets disposed between the third and fourth substrates. The fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type and an n-type thermoelectric element. The first and second heat conductors respectively penetrate the first and second through holes. Two ends of the first heat conductor respectively connect the second and fourth substrates, while two ends of the second heat conductor respectively connect the first and third substrates.

Abstract: A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. A chemical vapor deposition (CVD) diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer, wherein the first conductive pattern layer is enclosed by and spaced apart from the CVD diamond film. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat.

Abstract: A heat dissipation structure for an electronic device includes a body having a first surface and a second surface opposite to the first surface. A silicon-containing insulating layer is disposed on the first surface of the body. An ultrananocrystalline diamond film is disposed on the silicon-containing insulating layer. A first conductive pattern layer is disposed on the silicon-containing insulating layer and enclosed by the ultrananocrystalline diamond film, wherein the ultrananocrystalline diamond film and the first conductive pattern layer do not overlap with each other as viewed from a top-view perspective. A method for fabricating a heat dissipation structure for an electronic device and an electronic package having the heat dissipation structure are also disclosed.

Abstract: A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface.

Abstract: An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement.

Abstract: An integrated package structure having a solar cell and a thermoelectric element includes a substrate, a first solar cell and a thermoelectric element. The substrate has a first surface. The first solar cell has a second surface, a first electrode disposed on the second surface and a second electrode disposed on the second surface. The second surface faces the first surface. The thermoelectric element has a third electrode and a fourth electrode. The thermoelectric element is disposed between the first surface and the second surface. The first electrode and the second electrode are electrically connected to the third electrode and the fourth electrode respectively. A method of fabricating the integrated package structure having the solar cell and the thermoelectric element is also provided.

Abstract: A flexible thermoelectric device and a manufacturing method thereof are provided. Flexible substrates are formed by using LIGA process, micro-electro-mechanical process or electroforming technique. The flexible substrates are used to produce thermoelectric device. The structure and the material property of the substrates offer flexible property and tensile property to the thermoelectric device. Thermal transfer enhancement structures such as thermal via or metal diffusion layer are formed on the flexible substrates to overcome the low thermal transfer property of the flexible substrates.

Abstract: A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.

Abstract: An apparatus and a method for measuring a diode chip are provided. The diode chip is placed on a thermal conductive element. The apparatus measures an instant starting current and a first temperature, which is associated with the instant starting current, of the thermal conductive element. After the diode chip operates, the apparatus adjusts the temperature of the thermal conductive element to a second temperature, such that the current of the diode chip is adjusted to be equal to the instant starting current. The apparatus calculates a property of the diode chip according to a real power of the diode chip and a difference between the first temperature and the second temperature.

Abstract: A light emitting diode (LED) package structure including a first substrate, one or more LED chips, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.

Abstract: A stacked-chip packaging structure includes chip sets, a heat sink, a substrate, a circuit board, and solder balls. The chip sets are stacked together, each of which has a heat-dissipation structure and a chip. The heat-dissipation structure has a chip recess, through holes arranged in the chip recess, and an extending portion extending from the chip recess. The chip disposed in the chip recess has bumps. Each bump on the chip is correspondingly disposed in one of the through holes of the heat-dissipation structure. The extending portion of the heat-dissipation structure of each chip set contacts that of the neighboring chip set. The heat sink and the substrate are disposed at two opposite sides of the chip sets, respectively. The circuit board is below the substrate. The solder balls are between the circuit board and the substrate.

Abstract: A light emitting apparatus comprising a substrate, a first functional chip and a first light emitting component is provided. The substrate, the first functional chip, and the first light emitting component have a plurality of first bumps. In addition, the first functional chip has a plurality of first vias. The first light emitting component and the first functional chip are stacked on the substrate. Hence, the first light emitting component is electrically connected to the first functional chip and the substrate by the first vias and the first bumps.

Abstract: A circuit board structure and a manufacturing method thereof are provided. The circuit board structure includes a composite substrate, a dielectric layer, and a circuit layer. The composite substrate includes a metal substrate doped with non-metal powders and a metal buffer layer. A surface of the metal buffer layer opposite to the other surface of the metal buffer layer in contact with the metal substrate is treated by a polishing process. The dielectric layer is formed on the polished surface of the metal buffer layer, and the circuit layer is formed on the dielectric layer. Alternatively, a barrier layer is interposed between the dielectric layer and the metal buffer layer for preventing a diffusion effect of the metal buffer layer.

Abstract: The invention discloses an encapsulation comprising a metal substrate, a PCB on the metal substrate, a thermo-electric element in and/or on the PCB, and an LED on the thermo-electric element. Encapsulating methods are also provided by the invention.

Abstract: A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.

Abstract: An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high heat-generating density diffuses to a whole substrate using a heat conduction characteristic of hot electrons of a thermionic (TI) structure, and the thermionic (TI) structure and a thermo-electric (TE) structure share the substrate where the heat diffuses to. Further, the shared substrate serves as a cold end of the TE structure, and the heat diffusing to the shared substrate is pumped to another substrate of the TE structure serving as a hot end of the TE structure.

Abstract: A light emitting diode (LED) package structure including a first substrate, an LED chip, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.

Abstract: An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement.