Abstract: A bumped chip is revealed, including a chip, a UBM layer, an Ag bump, and a creeping-resist layer. The chip has a bonding pad and a passivation layer covering one surface of the chip and exposing the bonding pad. The UBM layer is disposed on the bonding pad and covers the passivation layer at the peripheries of the opening. The Ag bump is disposed on the UBM layer to form as a pillar bump having a top surface and a pillar sidewall. The creeping-resist layer is formed at least on the pillar sidewall to fully encapsulate the Ag bump. Therefore, the disclosed bumped chip will have no Ag-creeping due to exerting stresses nor changing of joint heights under high temperature environment to meet the bumping requirements of lead-free, high reliability, and lower cost.