Abstract: A method for preparing titanium dioxide particles co-doped with nitrogen and fluorine includes the steps of: mixing boric acid with ammonium fluorotitanate in an aqueous medium to form ammonium oxotrifluorotitanate; liquid-phase depositing the ammonium oxotrifluorotitanate on a silicon-containing substrate; and thermo-treating the ammonium oxotrifluorotitanate on the silicon-containing substrate at a temperature ranging from 300 to 1000° C.

Abstract: A method for preparing titanium dioxide particles co-doped with nitrogen and fluorine includes the steps of: mixing boric acid with ammonium fluorotitanate in an aqueous medium to form ammonium oxotrifluorotitanate; liquid-phase depositing the ammonium oxotrifluorotitanate on a silicon-containing substrate; and thermo-treating the ammonium oxotrifluorotitanate on the silicon-containing substrate at a temperature ranging from 300 to 1000° C.

Abstract: A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.

Abstract: A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.

Abstract: A method for making a MOS device includes: forming a titanium dioxide film on a semiconductor substrate; and subjecting the titanium dioxide film to a fluorine-containing ambient, and conducting passivation of grain boundary defects of the titanium dioxide film through reaction of fluorine and titanium dangling bonds in the titanium dioxide film.

Abstract: A MOS device includes: a semiconductor substrate; an insulator layer formed on the semiconductor substrate, and including a fluorine-containing titanium dioxide film that has grain boundary defects passivated by fluorine; and upper and lower electrodes formed on the insulator layer and the semiconductor substrate, respectively.

Abstract: A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.

Abstract: A titanate-containing material includes: a silicon-containing layer; and a crystalline layer of ammonium oxotrifluorotitanate formed on the silicon-containing layer. A method for making a titanate-containing material includes: immersing a silicon-containing substrate into an aqueous solution containing hexafluorotitanate radicals; and reacting the hexafluorotitanate radicals with water so as to form a crystalline layer of an oxotrifluorotitanate compound on the silicon-containing substrate.

Abstract: A semiconductor diode has a semiconductor die that includes a substrate, a first semiconductor film, a second semiconductor film, a first metal contact, and a second metal contact. The semiconductor die defines two diagonally opposite first corners and two diagonally opposite second corners. The first semiconductor film has an exposed area that is exposed from the second semiconductor film and that extends between one of the first corners and one of the second corners. The first metal contact is formed on the exposed area and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section. The second metal contact extends between the other one of the first corners and the other one of the second corners and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section.

Abstract: A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the, first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.

Abstract: A semiconductor diode has a semiconductor die that includes a substrate, a first semiconductor film, a second semiconductor film, a first metal contact, and a second metal contact. The semiconductor die defines two diagonally opposite first corners and two diagonally opposite second corners. The first semiconductor film has an exposed area that is exposed from the second semiconductor film and that extends between one of the first corners and one of the second corners. The first metal contact is formed on the exposed area and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section. The second metal contact extends between the other one of the first corners and the other one of the second corners and has an extension section and a wire-bonding section that has a width greater than that of the extension section and a length less than that of the extension section.

Abstract: This invention disclose a method for growing a barium titanate layer by means of liquid phase deposition (LPD), which characterizes by low cost, low-temperature growth, and easily practice. This novel method for growing a barium titanate characterizes by mixing a barium nitrate solution and hexafluorotitanic acid solution to produce a barium titanate solution. Next, a boric acid solution is added to the barium titanate solution to prepare a barium titanate growth solution. Then a substrate, such as a wafer, ready to grow a barium titanate layer thereon is dipped in this growth solution for a period of time at a suitable temperature. Thereafter, a barium titanate dielectric layer with the properties of high dielectric constant, low leakage current and breakdown resistant can be formed on the substrate.

Abstract: A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, and using an etchant to selectively remove the titanium dioxide layer. The titanium dioxide layer is formed by the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the integrated circuit device to the mixture to form the titanium dioxide layer thereon.

Abstract: A method for preparing a barium fluorotitanate (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitanate powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitanate powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.

Abstract: A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.

Abstract: A titanium dioxide layer serving as a mask used in a manufacturing process of integrated circuit and its removed method are disclosed. The method includes the steps of forming a titanium dioxide layer on the integrated circuit device to serve as a mask, and using an etchant to selectively remove the titanium dioxide layer. The titanium dioxide layer is formed by the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the integrated circuit device to the mixture to form the titanium dioxide layer thereon.

Abstract: A method for forming a titanium dioxide layer is disclosed. The method includes the steps of providing a titanium-containing material, adding hydrogen chloride and nitric acid to the titanium-containing material to form a mixture, and exposing the device to the mixture to form the titanium dioxide layer thereon. Not only can the refractive index of the titanium dioxide layer formed by this method be increased, but also its growth rate and stability will be enhanced to be applied in the production line. Such a method can be applied for forming a titanium dioxide layer on a semiconductor device, a silicon substrate, an integrated circuit, a photoelectric device, etc.

Abstract: A method for preparing a barium fluorotitante (BaTiF6) powder and depositing a barium titanate (BaTiO3) thin film on a silicon wafer is disclosed. The method includes steps of a) producing a barium fluorotitante powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitante powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.

Abstract: A method for forming a titanium dioxide layer is disclosed. The method includes the steps of providing a titanium-containing material, adding an acid substance to the titanium-containing material to form a mixture, and exposing the device to the mixture to form the titanium dioxide layer thereon. Such a method can be applied for forming a titanium dioxide layer on a semiconductor device, a silicon substrate, an integrated circuit, a photoelectric device, etc.

Abstract: A method and an apparatus for growing a layer on one surface of a wafer by liquid phase deposition are provided. At first, a first wafer is putted on a first wafer-holder by its first surface. Then, a growth-liquid vessel having a first opening at the bottom is mounted on the first wafer-holder. Thereafter, a growth liquid is poured into the growth-liquid vessel to expose a second surface of the first wafer to the growth liquid for growing the layer on the second surface of the first wafer. Then, the first wafer is taken out from the first wafer-holder to obtain a wafer with a layer grown only on one surface.