Abstract: A method of cleaning post-etch residues on a copper line includes providing a copper line which is divided into a first region and a second region. A dielectric layer is formed on the copper line. After that, the dielectric layer is etched to form openings in the dielectric layer. A number of openings within the first region is more than a number of openings in the second region. During the etching process, a potential difference is formed between the first region and the second region of the copper line. Finally, the dielectric layer and the copper line are cleaned by a solution with a PH value. The PH value has a special relation with the potential difference.

Abstract: A nanopore sensor comprises second electrophoresis electrode or micropump, second fluidic reservoir, second micro-nanometer separation channel, substrate, sub-nanometer-thick functional layer, first micro-nanometer separation channel, first electrophoresis electrode or micropump, and first electrophoresis electrode or micropump that are sequentially assembled. An opening and a nanopore are provided through the substrate and the sub-nanometer-thick functional layer, respectively. A first electrode for measuring ionic current is provided in the first micro-nanometer separation channel, and a second electrode for measuring ionic current is provide in the second micro-nanometer separation channel. The present invention provides a simple method to prepare a sub-nanometer functional layer having a nanopore extending through the sub-nanometer-thick functional layer. The pore size is comparable to the spacing between two adjacent bases in a DNA strand required for single-base resolution sequencing.

Abstract: A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed.

Abstract: A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed.

Abstract: A nanopore sensor comprises second electrophoresis electrode or micropump, second fluidic reservoir, second micro-nanometer separation channel, substrate, sub-nanometer-thick functional layer, first micro-nanometer separation channel, first electrophoresis electrode or micropump, and electrophoresis electrode or micropump that are sequentially assembled. An opening and a nanopore are provided through the substrate and the sub-nanometer-thick functional layer, respectively. A first electrode for measuring ionic current is provided in the first micro-nanometer separation channel, and a second electrode for measuring ionic current is provide in the second micro-nanometer separation channel. The present invention provides a simple method to prepare a sub-nanometer functional layer having a nanopore extending through the sub-nanometer-thick functional layer. The pore size is comparable to the spacing between two adjacent bases in a DNA strand required for single-base resolution sequencing.

Abstract: A nanopore electrical sensor is provided. The sensor has layered structure, including a substrate (1), the first insulating layer (2), a symmetrical electrode (3) and the second insulating layer (5) from bottom to top in turn. A nanopore (6) is provided in the center of the substrate (1), the first insulating layer (2), the symmetrical electrode (3) and the second insulating layer (5). The thickness of the symmetrical electrode can be controlled between 0.3 nm and 0.7 nm so as to meet the resolution requirements for detecting a single base in a single-stranded DNA. Thus the sensor is suitable for gene sequencing. The present invention overcomes current technical insufficiency to integrate a nanoelectrode with a nanopore and the method to prepare the nanoelectrode is simple.