Patents by Inventor Ming-Siou Wu

Ming-Siou Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Static random access memory cell, layout pattern and operation method thereof
    Patent number: 10157662
    Abstract: The present invention provides a memory cell. The memory cell includes a static random access memory (SRAM) cell located on a substrate. The SRAM cell includes a first storage node. At least one tunneling field-effect transistor (TFET), the gate of the tunneling field-effect transistor is electrically connected to the first storage node of the SRAM cell. A read bit line (RBL) electrically connected the drain of the TFET. A read terminal which is connected to a read port voltage (Vrp) and electrically connects to a source of the TFET.
    Type: Grant
    Filed: September 3, 2017
    Date of Patent: December 18, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Siou Wu, Tsung-Hsun Wu