Abstract: An integrated circuit (IC) structure includes a substrate having several regions, several semiconductor devices formed at the substrate and respectively within the regions, and an ultra-deep (UD) trench isolation structure formed in the substrate. The substrate has a top surface and a bottom surface oppositely, and the UD trench isolation structure formed in the substrate surrounds peripheries of each of the regions for structurally and physically isolating the semiconductor devices within different regions. The UD trench isolation structure penetrates the substrate by extending from the top surface of the substrate to the bottom surface of the substrate.

Abstract: Provided is a semiconductor device including a substrate, an isolation structure, a barrier structure, a first conductive layer, a second conductive layer, a first gate dielectric layer, and a second gate dielectric layer. The substrate has a first region and a second region. The barrier structure is located on the isolation structure. The first conductive layer is located on the first region. The second conductive layer is located on the second region. The first gate dielectric layer is located between the first conductive layer and the substrate in the first region. The second gate dielectric layer is located between the second conductive layer and the substrate in the second region. The first gate dielectric layer and the second gate dielectric layer are separated by the isolation structure. A method of manufacturing the semiconductor device is also provided.

Abstract: A manufacturing method of a semiconductor device includes forming a plurality of flash memory structures on a semiconductor substrate, wherein each of the flash memory structures includes a floating gate formed on the semiconductor substrate and a control gate formed on the floating gate; forming at least one pseudo contact between the plurality of flash memory structures; forming a liner film conformally on a surface of the pseudo contact; forming an interlayer dielectric layer on the whole semiconductor substrate to cover the pseudo contact and form at least one air gap between the pseudo contact and the flash memory structure; planarizing the interlayer dielectric layer until the top of the pseudo contact is exposed; removing the pseudo contact to form a contact opening; and forming a conductive material in the contact opening.

Abstract: A manufacturing method of a semiconductor device includes forming a plurality of flash memory structures on a semiconductor substrate, wherein each of the flash memory structures includes a floating gate formed on the semiconductor substrate and a control gate formed on the floating gate; forming at least one pseudo contact between the plurality of flash memory structures; forming a liner film conformally on a surface of the pseudo contact; forming an interlayer dielectric layer on the whole semiconductor substrate to cover the pseudo contact and form at least one air gap between the pseudo contact and the flash memory structure; planarizing the interlayer dielectric layer until the top of the pseudo contact is exposed; removing the pseudo contact to form a contact opening; and forming a conductive material in the contact opening.

Abstract: Provided is a semiconductor device including a substrate, an isolation structure, a barrier structure, a first conductive layer, a second conductive layer, a first gate dielectric layer, and a second gate dielectric layer. The substrate has a first region and a second region. The barrier structure is located on the isolation structure. The first conductive layer is located on the first region. The second conductive layer is located on the second region. The first gate dielectric layer is located between the first conductive layer and the substrate in the first region. The second gate dielectric layer is located between the second conductive layer and the substrate in the second region. The first gate dielectric layer and the second gate dielectric layer are separated by the isolation structure. A method of manufacturing the semiconductor device is also provided.

Abstract: A connector module adapted for a set-top box including a shielding case, a first connector disposed outside of the shielding case, an annular capacitor disposed between the first connector and the shielding case, and at least one ferrite core disposed in the shielding case and generating mutual inductance by coupling the shielding case is provided. The first connector being connected to a peripheral cable has a transmission cable penetrating into the shielding case. The annular capacitor is electrically connected between a grounding layer of the transmission cable and a grounding of a first circuit board of the set-top box. The transmission cable is connected to a second connector of the first circuit board after entering the shielding case and penetrating the ferrite core. A high frequency signal from the peripheral cable is transmitted to the first circuit board via the first connector, the transmission cable, and the second connector.

Abstract: A connector module adapted for a set-top box including a shielding case, a first connector disposed outside of the shielding case, an annular capacitor disposed between the first connector and the shielding case, and at least one ferrite core disposed in the shielding case and generating mutual inductance by coupling the shielding case is provided. The first connector being connected to a peripheral cable has a transmission cable penetrating into the shielding case. The annular capacitor is electrically connected between a grounding layer of the transmission cable and a grounding of a first circuit board of the set-top box. The transmission cable is connected to a second connector of the first circuit board after entering the shielding case and penetrating the ferrite core. A high frequency signal from the peripheral cable is transmitted to the first circuit board via the first connector, the transmission cable, and the second connector.

Abstract: A lighting device includes a microwave sensor for adjusting its sensing range based on a range gate selected from multiple range gates. An active antenna module transmits first FMCW signal toward a target based on the selected range gate and for receiving second FMCW signal reflected from the target. The microwave sensor demodulates the first FMCW signal and the second FMCW signal to generate beat frequency signal. Then another demodulator demodulates the beat frequency signal to generate Doppler signal. The microwave sensor calculates a range between the microwave sensor and the target based on the beat frequency signal, calculates velocity of the target according to frequency of the Doppler signal, and determine whether to generate triggering signal according to the calculated velocity and the calculated range, when the object located within the range gate. The power module enables a lamp based on the triggering signal.

Abstract: A microwave sensor adjusts its sensing range based on a range gate selected from multiple range gates. An active antenna module transmits a first FMCW signal toward a target based on the selected range gate and for receiving second FMCW signal reflected from the target. A modulating module is used for generating modulation signal. The bandwidth of the first FMCW signal depends on an amplitude of the modulation signal. A first demodulator is used for demodulating the first FMCW signal and the second FMCW signal to generate beat frequency. A second demodulator is used to demodulate the beat frequency signal to generate a Doppler signal. An indentifying circuit is used for generating a triggering signal based on a voltage difference between integral of the Doppler signal from an object within the rage gate and an integral of clutter.

Abstract: A microwave sensor is disclosed. The microwave sensor includes an active antenna module, a first low pass filter, a second demodulator, a modulation module, and a discrimination control module. The active antenna module is utilized for transmitting a first FMCW signal towards a target and receiving a second FMCW signal reflected back from the target according to a sweep period. The active antenna module includes a loop antenna and a radio frequency transistor. The first low pass filter and the radio frequency transistor form a first demodulator. The first demodulator and the second demodulator perform two-stage down converting and demodulating to extract information for calculating range and velocity, respectively. The present invention adjusts a radio frequency bandwidth of the FMCW signal by first adjusting an amplitude of a modulation signal generated by the modulation module to control various detection ranges.

Abstract: A microwave sensor adjusts its sensing range based on a range gate selected from multiple range gates. An active antenna module transmits a first FMCW signal toward a target based on the selected range gate and for receiving second FMCW signal reflected from the target. A modulating module is used for generating modulation signal. The bandwidth of the first FMCW signal depends on an amplitude of the modulation signal. A first demodulator is used for demodulating the first FMCW signal and the second FMCW signal to generate beat frequency. A second demodulator is used to demodulate the beat frequency signal to generate a Doppler signal. An indentifying circuit is used for generating a triggering signal based on a voltage difference between integral of the Doppler signal from an object within the rage gate and an integral of clutter.

Abstract: A lighting device includes a microwave sensor for adjusting its sensing range based on a range gate selected from multiple range gates. An active antenna module transmits first FMCW signal toward a target based on the selected range gate and for receiving second FMCW signal reflected from the target. The microwave sensor demodulates the first FMCW signal and the second FMCW signal to generate beat frequency signal. Then another demodulator demodulates the beat frequency signal to generate Doppler signal. The microwave sensor calculates a range between the microwave sensor and the target based on the beat frequency signal, calculates velocity of the target according to frequency of the Doppler signal, and determine whether to generate triggering signal according to the calculated velocity and the calculated range, when the object located within the range gate. The power module enables a lamp based on the triggering signal.

Abstract: A microwave sensor is disclosed. The microwave sensor includes an active antenna module, a first low pass filter, a second demodulator, a modulation module, and a discrimination control module. The active antenna module is utilized for transmitting a first FMCW signal towards a target and receiving a second FMCW signal reflected back from the target according to a sweep period. The active antenna module includes a loop antenna and a radio frequency transistor. The first low pass filter and the radio frequency transistor form a first demodulator. The first demodulator and the second demodulator perform two-stage down converting and demodulating to extract information for calculating range and velocity, respectively. The present invention adjusts a radio frequency bandwidth of the FMCW signal by first adjusting an amplitude of a modulation signal generated by the modulation module to control various detection ranges.

Abstract: A method of constructing a database for etching profile is disclosed. First, a standard etching group including a standard etching structure and a deviated etching group including a deviated etching structure are provided. Second, a remote sensing (RS) step is carried out to collect a standard RS data belonging to the standard etching group and a deviated RS data belonging to the deviated etching group. Then, the RS data is analyzed to infer feature parameters of the etching groups. Next, a deviated physical parameter is verified. Later, the correlation between the feature parameters and the deviated physical parameter is calculated to construct an etching profile database including the standard RS data and the deviated RS data. The etching profile database may facilitate the prediction of an unknown etching profile.