Abstract: A composite intermediary device using vertical probe for wafer testing, comprising: a printed circuit board, a glass interposer and a vertical probe set; wherein the printed circuit board has printed circuit connected with a measuring apparatus, the glass interposer has multiple contact pads connected with the printed circuit, and then the probes of the vertical probe set are against the contact pads of the glass interposer and the bumps of the device under test. By a fine pitch configuration of the printed circuit and the contact pads of the glass interposer, the present invention achieves the requirements of synchronous and interleaved testing of multiple ICs.

Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.

Abstract: The invention relates to a combined dual-wavelength laser light processing device, having two laser light source and a Bessel beam lens, so as to form a Bessel beam with long focal length; Using the coaxial reflecting mirror to achieve deflecting and penetrating to form two coaxial finished light beams; a diffraction optical unit for adjusting the energy distribution of the finished light beam; a work platform; a laser galvanometric scanning module to achieve guiding the finished light beam; a controller electrically connected to the two laser light sources, and controls the projection timing and energy of the first and the second wavelength beams to form at least one rectangular pulse and at least one burst pulse, through the repeated conversion of the dual wavelengths in the composite light wave configuration make the processing of the composite material to be fast and precise.

Abstract: An image quality improvement method and an image processing apparatus using the same are provided. Denoising filtering is performed to an original image by a filter to obtain a preliminary processing image. The preliminary processing image is input to a multi-stage convolutional network model to generate an optimization image through the multi-stage convolutional network model. The multi-stage convolutional network model includes multiple convolutional network sub-models, and these convolutional network sub-models respectively correspond to different network architectures.

Abstract: A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. The semiconductor structure is disposed on the substrate and has a plurality of openings penetrating through the semiconductor structure and extending into the substrate. The semiconductor structure includes a substrate, a stacked structure and an epitaxial layer. The stacked structure includes insulating layers and gate layers stacked alternatively. Each of the plurality of openings includes a first portion located above the surface of the substrate and a second portion located below the surface of the substrate. The aspect ratio of the second portion is more than 1. The epitaxial layer is disposed in each of the plurality of openings. The top surface of the epitaxial layer is between the top surface and the bottom surface of the i-th insulating layer as counted upward from the substrate, wherein i?2.

Abstract: A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.

Abstract: A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.

Abstract: A semiconductor device includes a substrate and a first and second plurality of stack structures arranged over the substrate. The first and second plurality of stack structures are separated by a gap. The substrate includes a first trench between the structures of the first plurality of stack structures, a second trench between the structures of the second plurality of stack structures, and a third trench in the gap. A depth of the first trench is less than a depth of the third trench.

Abstract: A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask.

Abstract: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Abstract: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Abstract: A method to further adjust the final CD of a material to be etched during an etching process, and after a photolithographic patterning process can include patterning a semiconductor substrate using a mask layer. The mask layer can comprise a hardmask material having a protruding feature with an initial width. A first plasma comprising carbon and fluorine can be introduced into a chamber, where residual carbon and fluorine is deposited on at least the chamber wall. A portion of the mask layer can then be removed with a second plasma incorporating the residual carbon and fluorine, whereby remaining hardmask material forms a feature pattern where the protruding feature has a final width different from the initial width. The feature pattern can then be transferred to the semiconductor substrate using the final width of the at least one protruding feature provided by the remaining hardmask material.

Abstract: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Abstract: A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

Abstract: An isolation structure comprising a substrate is provided. A trench is in the substrate. A sidewall of the trench has a first inclined surface and a second inclined surface. The first inclined surface is located on the second inclined surface. The slope of the first inclined surface is different from the slope of the second inclined surface. A length of the first inclined surface is greater than 15 nanometers.

Abstract: A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier.

Abstract: A memory device and a manufacturing method thereof are provided. The manufacturing method of memory device includes the following steps. Firstly, a substrate having a substrate surface is provided. Next, at least two memory units separated via a space are formed on the substrate. Then, an insulating layer covering the memory units and the substrate surface is formed. After that, a mask layer only covering the bottom of the insulating layer is formed on the insulating layer. Afterwards, the part of the insulating layer partially covered by the mask layer is etched. Then, the mask layer is removed. Next, the part of the insulating layer where the mask layer is removed is etched. Lastly, a protecting layer is formed on the memory units and in the space between the memory units.

Abstract: A matrix resistive touch device includes a first substrate, a spacer layer, and a second substrate. The first substrate is used for detecting a position of an input point in a first direction. The second substrate is used for detecting the position of the input point in a second direction. The first substrate has a conductive layer. The conductive layer has a voltage difference in the first direction. The second substrate has a plurality of electrodes. The plurality of electrodes is perpendicular to the second direction. The spacer layer is located between the first substrate and the second substrate for separating the conductive layer and the plurality of electrodes.

Abstract: A portable electronic device with a touch illumination function and a touch illumination method thereof are provided. The portable electronic device with the touch illumination function includes an input module, a touch sensor, and an illumination module. The touch sensor is disposed around the input module, senses a touch motion of the input module, and generates a touch signal according to the touch motion. The illumination module is disposed around the input module, coupled with the touch sensor, and controls the illumination module to generate a light source to illuminate the input module according to the touch signal.

Abstract: To perform palm rejection, scan a plurality of areas on a touch panel to detect a plurality of triggered areas within the plurality of areas. Then detect which of the triggered areas are next to one another to determine a plurality of blocks. If the plurality of blocks contain a block with an overlarge area, then eliminate the block with the overlarge area, and generate a current coordinate according to a block with a smaller area which may be triggered by a finger or stylus.