Patents by Inventor Ming Wsing Tsai

Ming Wsing Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for improvement of electromigration of copper by carbon doping
    Patent number: 6110817
    Abstract: A method for forming a carbon doped copper layer, preferably an electrochemically deposited carbon doped copper layer over a semiconductor structure, comprising the following steps. A semiconductor structure having an upper surface is provided. The semiconductor structure is placed in an electrochemical bath having a predetermined concentration of carbon. A first carbon doped copper layer is electrochemically deposited for a first period of time at a first current density. The first carbon doped copper layer blanket fills the semiconductor structure and has a predetermined thickness and a first concentration of carbon. A second carbon doped copper layer is electrochemically deposited over the first carbon doped copper layer for a second period of time at a second current density. The second carbon doped copper layer has a predetermined thickness and a second concentration of carbon.
    Type: Grant
    Filed: August 19, 1999
    Date of Patent: August 29, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ming Wsing Tsai, Shau-Lin Shue