Abstract: A two-phase immersion-type heat dissipation structure having fins for facilitating bubble generation is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the plurality of fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins and the fin surface have an included angle therebetween that is from 80 degrees to 100 degrees. A center line average roughness (Ra) of the side surface is less than 3 ?m, and a ten-point average roughness (Rz) of the side surface is not less than 12 ?m.

Abstract: Techniques are disclosed to optimize feature selection in generating betas for a feature dictionary of a neuro-linguistic Cognitive AI System. A machine learning engine receives a sample vector of input data to be analyzed by the neuro-linguistic Cognitive AI System. The neuro-linguistic Cognitive AI System is configured to generate multiple betas for each of a plurality of sensors. The machine learning engine identifies a sensor specified in the sample vector and selects optimization parameters for generating betas based on the identified sensor.

Abstract: A two-phase immersion-type heat dissipation structure having acute-angle notched structures is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, and a plurality of fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fin surface is connected with the fins. More than half of the fins are functional fins, and at least one side surface of each of the functional fins has first and second surfaces defined thereon and connected to each other. An angle between the first surface and the fin surface is from 80 degrees to 100 degrees, and an angle between the second surface and the fin surface is less than 75 degrees.

Abstract: A display panel includes a driving backplane, provided with a display area including a first sub-area and a second sub-area; a light-emitting layer, located at one side of the driving backplane, and including a pixel definition layer and a plurality of light-emitting devices, the pixel definition layer is provided with a plurality of first light-transmitting holes located in the second sub-area; and a color film layer, located at one side of the light-emitting layer away from the driving backplane, and including a light-shielding portion and a plurality of light-filtering portions separated by the light-shielding portion, the light-filtering portions and the light-emitting devices are arranged in one-to-one correspondence in a direction perpendicular to the driving backplane, the light-shielding portion is provided with a plurality of second light-transmitting holes, and the second light-transmitting holes and the first light-transmitting holes are arranged in one-to-one correspondence in the direction perpen

Abstract: A two-phase immersion-cooling heat-dissipation composite structure is provided. The heat-dissipation composite structure includes a heat dissipation base, a plurality of high-thermal-conductivity fins, and at least one high-porosity solid structure. The heat dissipation base has a first surface and a second surface that face away from each other. The second surface of the heat dissipation base is in contact with a heating element immersed in a two-phase coolant. The first surface of the heat dissipation base is connected to the high-thermal-conductivity fins. The at least one high-porosity solid structure is located at the first surface of the heat dissipation base, and is connected and alternately arranged between side walls of two adjacent ones of the high-thermal-conductivity fins. Each of the high-porosity solid structure includes a plurality of closed holes and a plurality of open holes.

Abstract: Disclosed in the present disclosure is an information-based intelligent quality traceability system for fresh milk, which includes a database module configured to store information of the system, a data encryption module configured to encrypt obtained information, an enterprise information module, a raw material information module, a first measurement module, a destruction information module, a transportation information module, a second measurement module, a processing information module, and a delivery information module. Each information module obtains information, a data decryption module is configured to decrypt obtained information, a vehicle condition analysis module is configured to analyze a relation between a vehicle running condition and product quality, and a data analysis module is configured to analyze the data of the system.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: An optical device is provided. The optical device includes a ring waveguide and a bus waveguide. The ring waveguide includes a coupling region. The bus waveguide is disposed adjacent to and spaced apart from the coupling region of the ring waveguide. The bus waveguide includes a coupling structure corresponding to the coupling region.

Abstract: An optical imaging lens is provided. The optical imaging lens includes a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element, a seventh lens element and an eighth lens element sequentially arranged along an optical axis from an object side to an image side. Each of the first lens element to the eighth lens element includes an object-side surface facing the object side and allowing imaging rays to pass through and an image-side surface facing the image side and allowing the imaging rays to pass through. Lens elements of the optical imaging lens are only the eight lens elements described above, and satisfy the conditions |V4?V5|?30.000 and (G67+T7)/(G56+T6)?1.500.

Abstract: A force sensing method, applied to a force sensing system comprising a plurality of force sensors and a touch sensing surface, comprising: (a) determining a first location of a first object on the touch sensing surface; (b) defining a first force sensing region according to the first location; and (c) computing a first system sensing force which the first object causes to the touch sensing surface according to the first location, and according to at least one sensor sensing force of a first part of the force sensors corresponding to the first force sensing region. The present invention also discloses a force sensing system which uses the above-mentioned force sensing method, and an efficient force sensor calibration method. Noises can be reduced and power consumption can be decreased, since only sensor sensing forces of force sensors near the object are used for computing the system sensing force.

Abstract: Provided herein are compounds according to Formula (I) or a pharmaceutically acceptable salt thereof, wherein R1, R2, R3, R5, and R7 are defined herein. Also provided herein are pharmaceutical compositions comprising a compound of Formula (I) as well as the use of such compounds as M4 receptor agonists.

Abstract: A two-phase immersion-type heat dissipation structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate and a plurality of non-vertical fins. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other. The non-fin surface is configured to be in contact with a heating element immersed in a two-phase coolant. The fin surface is connected with the non-vertical fins, a cross-sectional contour of one of the non-vertical fins has a top end point and a bottom end point connected with the fin surface, and the top and bottom end points are opposite to each other. A length of a cross-sectional contour line defined from the top end point to the bottom end point is greater than a perpendicular line length of a perpendicular line defined from the top end point to the fin surface.

Abstract: A two-phase immersion-type heat dissipation structure having skived fin with high porosity is provided. The two-phase immersion-type heat dissipation structure having skived fin with high porosity includes a porous heat dissipation structure having a total porosity that is equal to or greater than 5%. The porous heat dissipation structure includes a porous substrate and a plurality of porous and skived fins. The porous substrate has a first surface and a second surface that face away from each other. The second surface of the porous substrate is configured to be in contact with a heating element that is immersed in a two-phase coolant. The plurality of porous and skived fins are integrally formed on the first surface of the porous substrate by skiving. A first porosity of the plurality of porous and skived fins is greater than a second porosity of the porous substrate.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A two-phase immersion-type heat dissipation structure having a porous structure is provided. The two-phase immersion-type heat dissipation structure includes a heat dissipation substrate, a plurality of fins, and a reinforcement frame. The heat dissipation substrate has a fin surface and a non-fin surface that face away from each other, the non-fin surface is configured to be in contact with a heat source immersed in a two-phase coolant, and the fins are integrally formed on the fin surface. A porous structure is covered onto at least one portion of the fin surface and at least one portion of the plurality of fins, and has a porosity of from 10% to 50% and a thickness that is from 0.1 mm to 1 mm. The reinforcement frame is bonded to the heat dissipation substrate and surrounds another one portion of the plurality of fins.

Abstract: The present disclosure provides an encapsulating structure, a display substrate and a manufacturing method therefor, and a display apparatus. The encapsulating structure is used for encapsulating components, and includes: a first encapsulating layer configured to cover the components; and a second encapsulating layer stacked with the first encapsulating layer; the second encapsulating layer is located on the side of the first encapsulating layer away from the components, a surface of the second encapsulating layer facing the first encapsulating layer is in contact with a surface of the first encapsulating layer facing the second encapsulating layer, and a surface of the second encapsulating layer away from the first encapsulating layer is substantially parallel to a plane where the encapsulating structure is located.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A thermoplastic polyolefin composition comprises: (A) a polypropylene polymer; (B) an elastomer component; (C) an additive component; and (D) a scavenger component comprising a polyacetoacetate compound having the Formula (I) defined herein and calcium carbonate. And an article is made from the thermoplastic polyolefin composition.

Abstract: A method for detecting and compensating CNC tools being implemented in an electronic device, receives from a detector first parameters and second parameters in respect of a first tool. Such first parameters include at least one of service life, blade break information, and blade chipping information of the first tool, and such second parameters include at least one of length extension information, length wear information, radial wear information, and blade thickness wear information of the first tool. Based on the first parameters, instructions to process the workpiece are transmitted or not. Upon receiving the second parameters, instructions to adjust operation of the first tool are transmitted, to compensate for deterioration in normal use.

Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.