Patents by Inventor Ming-Yih Kao
Ming-Yih Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240162602Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.Type: ApplicationFiled: January 2, 2024Publication date: May 16, 2024Inventors: Chia-Ping TSENG, Ker-Yih KAO, Chia-Chi HO, Ming-Yen WENG, Hung-I TSENG, Shu-Ling WU, Huei-Ying CHEN
-
Publication number: 20240162241Abstract: The present disclosure provides an electronic device including a substrate, a semiconductor disposed on the substrate, and a conductive layer disposed on the semiconductor. The conductive layer has a first electrode and a second electrode, in which the first electrode is electrically connected to the semiconductor, and the second electrode surrounds the first electrode in a top view direction of the electronic device.Type: ApplicationFiled: January 24, 2024Publication date: May 16, 2024Applicant: InnoLux CorporationInventors: Chi-Lun Kao, Ker-Yih Kao, Ming-Chun Tseng, Kung-Chen Kuo
-
Publication number: 20240145461Abstract: A modulation device includes a substrate, an electrostatic discharge protection element, an electronic element, and a driving element. The substrate has an active region. The electrostatic discharge protection element is arranged around the active region. The electronic element is disposed in the active region. The driving element is electrically connected to the electronic element.Type: ApplicationFiled: October 4, 2023Publication date: May 2, 2024Applicant: Innolux CorporationInventors: Ker-Yih Kao, Tong-Jung Wang, Wen-Chieh Lin, Ming-Chun Tseng, Yi-Hung Lin
-
Publication number: 20240147606Abstract: An electronic device includes a first substrate structure, multiple electronic elements and a second substrate structure. The first substrate structure includes a first substrate. The electronic elements are disposed on the first substrate. The second substrate structure is coupled to the first substrate structure. The second substrate structure includes a second substrate, a protection circuit, a driving circuit and a bonding pad. The protection circuit is disposed on the second substrate. The driving circuit is disposed on the second substrate and configured to drive at least a part of the electronic elements. The bonding pad is disposed on the second substrate. The protection circuit is respectively coupled to the bonding pad and the driving circuit. The electronic device may reduce the damage caused by electrostatic discharge or reduce the impact of the bonding process of the bonding pad on signal conduction.Type: ApplicationFiled: September 14, 2023Publication date: May 2, 2024Applicant: Innolux CorporationInventors: Mu-Fan Chang, Yi-Hua Hsu, Hung-Sheng Liao, Min-Hsin Lo, Ming-Chun Tseng, Ker-Yih Kao
-
Patent number: 11974479Abstract: An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.Type: GrantFiled: December 11, 2020Date of Patent: April 30, 2024Assignee: INNOLUX CORPORATIONInventors: Shun-Yuan Hu, Chin-Lung Ting, Li-Wei Mao, Ming-Chun Tseng, Kung-Chen Kuo, Yi-Hua Hsu, Ker-Yih Kao
-
Patent number: 11923378Abstract: The present disclosure provides an electronic device including a substrate, a common electrode, and a plurality of pixels. The common electrode is disposed on the substrate. The pixels are disposed on the substrate, and at least one of the pixels includes a thin film transistor, a first electrode, a second electrode, and an auxiliary electrode. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is partially overlapped with the first electrode in a top view direction of the electronic device. The auxiliary electrode is electrically connected to the common electrode and electrically isolated from the first electrode, and the first electrode and the auxiliary electrode have a minimum distance less than a minimum distance between the first electrode and the common electrode.Type: GrantFiled: February 20, 2023Date of Patent: March 5, 2024Assignee: InnoLux CorporationInventors: Chi-Lun Kao, Ker-Yih Kao, Ming-Chun Tseng, Kung-Chen Kuo
-
Patent number: 9202905Abstract: Embodiments include apparatuses and methods related to an HFET. In embodiments, one or all of the buffer layer, the back-barrier layer, or the barrier layer may be formed of a digital alloy. In embodiments, the digital alloy may include alternating layers of alloys of aluminum, gallium, and nitrogen. Other embodiments may be disclosed or claimed herein.Type: GrantFiled: September 8, 2014Date of Patent: December 1, 2015Assignee: TriQuint Semiconductor, Inc.Inventors: Jinqiao Xie, Edward A. Beam, III, Ming-Yih Kao, Hua-Quen Tserng, Paul Saunier
-
Patent number: 7541232Abstract: A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.Type: GrantFiled: November 28, 2007Date of Patent: June 2, 2009Assignee: Lockheed Martin CorporationInventors: Kevin L. Robinson, Larry Witkowski, Ming-Yih Kao
-
Publication number: 20080090345Abstract: A method for fabricating devices in a multi-layer structure adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors includes defining gate recesses in the structure. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.Type: ApplicationFiled: November 28, 2007Publication date: April 17, 2008Inventors: Kevin Robinson, Larry Witkowski, Ming-Yih Kao
-
Patent number: 7321132Abstract: A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.Type: GrantFiled: March 15, 2005Date of Patent: January 22, 2008Assignee: Lockheed Martin CorporationInventors: Kevin L. Robinson, Larry Witkowski, Ming-Yih Kao
-
Publication number: 20060208279Abstract: A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The structure has, on a substrate, a channel layer, spacer layer on the channel layer, a first Schottky layer, a second Schottky layer on the first Schottky layer, and a third Schottky layer on the second Schottky layer, and a contact layer on the third Schottky layer. Etch stops are defined intermediate the first and second Schottky layers, intermediate the second and third Schottky layers, and intermediate the third Schottky layer and the contact layer.Type: ApplicationFiled: March 15, 2005Publication date: September 21, 2006Inventors: Kevin Robinson, Larry Witkowski, Ming-Yih Kao
-
Publication number: 20040178422Abstract: A high electron mobility transistor is constructed with a substrate, a lattice-matching buffer layer formed on the substrate, and a heavily doped p-type barrier layer formed on the buffer layer. A spacer layer is formed on the barrier layer, and a channel layer is formed on the spacer layer. The channel layer may be of uniform composition, or may be made from two or more sublayers. A Schottky layer is formed over the channel layer, and source and drain contacts are formed on the Schottky layer. The substrate may be gallium arsenide, indium phosphide, or other suitable material, and the various semiconductor layers formed over the substrate contain indium. The transistor's transition frequency of the transistor is above 200 GHz.Type: ApplicationFiled: March 14, 2003Publication date: September 16, 2004Applicant: TriQuint Semiconductor, Inc.Inventors: Hua Quen Tserng, Edward A. Beam, Ming-Yih Kao
-
Patent number: 6787826Abstract: A high electron mobility transistor is constructed with a substrate, a lattice-matching buffer layer formed on the substrate, and a heavily doped p-type barrier layer formed on the buffer layer. A spacer layer is formed on the barrier layer, and a channel layer is formed on the spacer layer. The channel layer may be of uniform composition, or may be made from two or more sublayers. A Schottky layer is formed over the channel layer, and source and drain contacts are formed on the Schottky layer. The substrate may be gallium arsenide, indium phosphide, or other suitable material, and the various semiconductor layers formed over the substrate contain indium. The transistor's transition frequency of the transistor is above 200 GHz.Type: GrantFiled: March 14, 2003Date of Patent: September 7, 2004Assignee: TriQuint Semiconductor, Inc.Inventors: Hua Quen Tserng, Edward A. Beam, III, Ming-Yih Kao
-
Patent number: 6697412Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.Type: GrantFiled: April 13, 2001Date of Patent: February 24, 2004Assignee: TriQuint Semiconductor, Inc.Inventors: Edward A. Beam, III, Gary A. Evans, Paul Saunier, Ming-Yih Kao, David M. Fanning, William H. Davenport, Andy Turudic, Walter A. Wohlmuth
-
Publication number: 20020150137Abstract: A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.Type: ApplicationFiled: April 13, 2001Publication date: October 17, 2002Inventors: Edward A. Beam, Gary A. Evans, Paul Saunier, Ming-Yih Kao, David M. Fanning, William H. Davenport, Andy Turudic, Walter A. Wohlmuth
-
Patent number: 6100477Abstract: A novel micro-electro-mechanical (MEMS) RF switch having a cavity (32) in a substrate (28) which creates a spacing between a conductive membrane (34) and a bottom electrode (38). The invention eliminates the need for the dielectric posts found in prior art MEMS RF switches, includes a flexure structure (36) in the membrane (34) which will reduce the required pull down voltage for the membrane, and reduces the stress and fatigue in the membrane due to switch activation.Type: GrantFiled: July 17, 1998Date of Patent: August 8, 2000Assignee: Texas Instruments IncorporatedInventors: John Neal Randall, Ming-Yih Kao