Abstract: The disclosure provides a communication and interaction method and a communication and interaction system using the communication interaction method. The communication and interaction method for communicating and interacting between an electric unit and a power supply unit, including: providing a communication module between the power supply unit and the electric unit; the power supply unit sends a first identification information to the electric unit through the communication module; the electric unit parses the first identification information through the communication module; and the communication module, on the basis of its own communication structure, matches a communication mode and a communication protocol which are applicable to the power supply unit and the electric unit at the same time, such that the communication between the electric unit and the power supply unit is established.

Abstract: A safety device comprises a first heat dissipation part, a second heat dissipation part and a connecting part. The connecting part is arranged between the first heat dissipation part and the second heat dissipation part, and at least one heat locking hole disposed thereon. The heat locking hole of the connecting part can reduce a diffusion speed of heat of the connecting part, so that the heat is concentrated between the first heat locking hole and the second heat locking hole, and thus the connecting part can be fused in time at a high temperature.

Abstract: A vacuum battery structural assembly and a vacuum multi-cell battery module composed thereof are provided and include a first repeating unit including a first frame plate and a second frame plate with respect to the first frame plate; and an electrolyte channel defined within the first frame plate and the second frame plate to accommodate a liquid electrolyte, wherein both a surface of the first frame plate and a surface of the second frame plate include a vacuum suction area, the vacuum suction area includes a vacuum aperture and a vacuum channel, wherein the vacuum aperture is formed on at least one surface of the first frame plate and the second frame plate, the vacuum channel is positioned inside the first frame plate and the second frame plate, and is configured to generate a longitudinal pressing suction force and seal the first frame plate and the second frame plate.

Abstract: The invention provides a voltage balancing system for balancing controlling of voltage of battery cells including a first set of battery cells and a second set of battery cells connected in series. The system includes a high-side analog front end (AFE) connected to the first set of battery cells, a low-side analog front end (AFE) connected to the second set of battery cells, a microcontroller communicating with the high-side AFE and the low-side AFE, and a communication isolating module interconnecting between the high-side AFE and the microcontroller. The system further includes a balancing module arranged at a back end of the low-side AFE or the high-side AFE to equalize voltages output by the low-side AFE and the high-side AFE. Compared with the prior arts, the system employs a balancing module to balance the voltages of the two sets of battery cells, which can shorten the voltage difference therebetween.

Abstract: A computing system receives a request to verify a user, the request comprising an indication of a jurisdiction in which the user will be verified. Based on the request, the computing system collects information related to the user. Based on the request, the computing system identifies a workflow corresponding to the jurisdiction. The workflow defines conditions for obtaining a verified status in the jurisdiction. The computing system executes the workflow to verify the user. The computing system hashes the verification record using a zero-knowledge proof protocol. The computing system generates a non-fungible token corresponding to the verification record. The non-fungible token is associated with a hashed version of the verification record. The computing system broadcasts the non-fungible token to a blockchain.

Abstract: The disclosure provides a battery pack, a power tool system and a charging system. The battery pack includes a battery pack housing in which a battery cell assembly and a circuit board are mounted. The circuit board is electrically connected with the battery cell assembly. A plurality of Type-C connectors are arranged on the circuit board and electrically connected to the circuit board to realize an electrical connection between the battery cell assembly and the Type-C connectors, and are configured to connect external devices.

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10?2 ?cm to about 10 ?cm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10?2 ?cm to about 10 ?cm. A weight percentage of crystalline In2CexZnO4+2x in the sputtering target is larger than 80%.

Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.

Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.