Abstract: A heating assembly applied to an electronic vaporization device includes: a ceramic substrate; and a heating layer including stainless steel and inorganic non-metal. The heating layer heats a substrate to be vaporized to form an aerosol and has a temperature coefficient of resistance (TCR) temperature-sensitive characteristic. The inorganic non-metal adjusts the TCR of the heating layer.

Abstract: A heating body for an electronic vaporization is disclosed. The heating body comprises a liquid guiding substrate, a heating material layer, a first protective film, and a second protective film. The liquid guiding substrates comprises a heating region and an electrode region. The heating material layer is arranged on a first surface of the liquid guiding substrate. The first protective film is made of a non-conductive material resistant to a corrosion of an aerosol-generation substrate. The second protective film is made of a conductive material resistant to a corrosion of the aerosol-generation substrate.

Abstract: A heating element including a dense substrate and a heating film is disclosed. The dense substrate includes a first surface and a second surface opposite to the first surface. A plurality of micro-pores are arranged in the dense substrate. The micro-pores are through holes, and each of the micro-pores is configured to guide an aerosol-forming medium to the first surface. The heating film is formed on the first surface. A ratio of a thickness of the dense substrate to a pore size of the micro-pore is in a range of 20:1-3:1.

Abstract: A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

Abstract: A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implementation, a buffer underlies the doped p-layer and the re-channel, and a drain underlies the buffer.