Abstract: A plug connector includes an outer member and an insulated member. The outer member has a receiving groove. One of two ends of the outer member has a mating side, and the other end of the outer member has an assembling side. The outer member includes a mating ring portion, one or more extension portions, and one or more elastic pieces. The mating ring portion is at the mating side. The extension portion, the elastic piece, and the mating ring portion are integrally formed as a one-piece structure. The extension portion extends toward the assembling side from a side end of one side of the mating ring portion, and the elastic piece is bent at an end portion of the extension portion and arranged at a side portion of the extension portion. The insulated member is in the receiving groove.

Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: An integrated circuit (IC) structure includes a substrate having several regions, several semiconductor devices formed at the substrate and respectively within the regions, and an ultra-deep (UD) trench isolation structure formed in the substrate. The substrate has a top surface and a bottom surface oppositely, and the UD trench isolation structure formed in the substrate surrounds peripheries of each of the regions for structurally and physically isolating the semiconductor devices within different regions. The UD trench isolation structure penetrates the substrate by extending from the top surface of the substrate to the bottom surface of the substrate.

Abstract: A flammable gas generating device includes a casing in which a mixing tank is received, the mixing tank has an inner space. A hydrogen input pipe connected to a hydrogen source, an oxygen input pipe connected to an oxygen source and a coolant pipe connected to a coolant source are respectively connected to the mixing tank and in communication with the inner space. Hydrogen and oxygen are mixed in the mixing tank and sent out via an output pipe to appliance such as a burner.