Abstract: A method includes preparing a mixture having an organic solvent, a fluorine-containing polymer, at least one organic base, and a crosslinker component; depositing the mixture over a substrate to form a first layer; and crosslinking the first layer by light treatment to form a crosslinked gate dielectric layer, such that the fluorine-containing polymer is at least one of homopolymers of vinylidene fluoride or copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. A transistor includes a crosslinked gate dielectric layer disposed over a substrate; an organic semiconductor layer disposed over the substrate and being in direct contact with the crosslinked gate dielectric layer; a source and a drain in contact with the organic semiconductor layer and defining the ends of a channel through the organic semiconductor layer; and a gate superposed with the channel, such that the crosslinked gate dielectric layer separates the gate from the organic semiconductor layer.

Abstract: The present disclosure describes a method of crosslinking fluoroelastomers, or more precisely thermally-crosslinkable fluorine-containing polymers, and to devices such as OTFTs (organic thin film transistors) incorporating such polymers. In some embodiments, a method comprises mixing: a solvent, a thermally crosslinkable fluorine-containing polymer, and one or more organic bases to form a mixed solution. The mixed solution is deposited over a substrate to form a first layer. The first layer is then crosslinked by thermal treatment to form a crosslinked first layer. The polymer is selected from: homopolymers of vinylidene fluoride; and copolymers of vinylidene fluoride with fluorine-containing ethylenic monomers. The one or more organic bases each have a pKa of 10 to 14.

Abstract: Compositions are included comprising heterocyclic organic compounds based on fused thiophene compounds, polymers based on fused thiophene compounds, and methods for making the monomers and polymer along with uses in thin film-based and other devices.

Abstract: A method for forming organic semiconducting materials, including: providing a mixture having: a tetrathienoacene (FT4)-based monomer, and one of a thiophene-containing compound or an alkene-containing compound; and reacting the FT4-based monomer with the thiophene-containing compound or the alkene-containing compound in a one-step direct arylation reaction mechanism to form a final FT4-based organic semiconducting compound.

Abstract: Described herein are compositions including heterocyclic organic compounds. More specifically, described herein are bicyclic thiadiazole-based compounds that are combined with fused thiophenes structures, along with methods for making such compounds, and uses thereof.

Abstract: Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

Abstract: Disclosed is a polymer blend comprising an organic semiconductor (OSC) polymer blended with an isolating polymer and method for making the same. The OSC polymer includes a diketopyrrolopyrrole fused thiophene polymeric material, and the fused thiophene is beta-substituted. The isolating polymer includes a non-conjugated backbone, and the isolating polymer may be one of polyacrylonitrile, alkyl substituted polyacrylonitrile, polystyrene, polysulfonate, polycarbonate, an elastomer block copolymer, derivatives thereof, copolymers thereof and mixtures thereof. The method includes blending the OSC polymer with an isolating polymer in an organic solvent to create a polymer blend and depositing a thin film of the polymer blend over a substrate. Also disclosed is an organic semiconductor device that includes a thin semiconducting film comprising OSC polymer.

Abstract: Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

Abstract: Compositions are included comprising heterocyclic organic compounds based on fused thiophene compounds, polymers based on fused thiophene compounds, and methods for making the monomers and polymer along with uses in thin film-based and other devices.

Abstract: Electronics assemblies including laminate substrates and methods of manufacture are disclosed. In one embodiment, an electronics assembly (140A) includes a glass-based substrate (110) having a thickness of less than or equal to 300 ?m, a first surface (111) and a second surface, at least one gate electrode (155) disposed on the first surface (111) of the glass-based substrate (110), and a polymer layer (154) disposed on the first surface (111) of the glass-based substrate (110). The polymer layer (154) contacts at least a portion of the at least one gate electrode (155). The electronics assembly (140A) further includes at least one source electrode (152), at least one drain electrode (153), and a semiconductor material (151) disposed on the polymer layer (154). The semiconductor material (151) contacts at least a portion of the at least one source electrode (152) and the at least one drain electrode (153).

Abstract: Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

Abstract: Laminated glass articles and methods for making the same are disclosed. In one embodiment, a laminated glass article may include a glass core layer and at least one glass cladding layer fused to the glass core layer. The at least one glass cladding layer may be phase separated into a first phase and at least one second phase having different compositions. The first phase of the at least one glass cladding layer may have an interconnected matrix. The at least one second phase of the at least one glass cladding layer may be dispersed throughout the interconnected matrix of the first phase of the at least one glass cladding layer. In some embodiments, the at least one second phase may be selectively removed from the interconnected matrix leaving a porous, interconnected matrix of the first phase.

Abstract: Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

Abstract: Described herein are heterocyclic organic compounds. More specifically, described herein are compounds based on the combination of fused pyrrole structures with diketopyrrolopyrrole structures, methods for making these compounds, and uses thereof. The compounds disclosed have improved electronic, polymerization and stability properties that allow for improved material processibility and inclusion in organic semiconductor devices.

Abstract: Described herein are heterocyclic organic compounds. More specifically, described herein are compounds based on the combination of fused pyrrole structures with diketopyrrolopyrrole structures, methods for making these compounds, and uses thereof. The compounds disclosed have improved electronic, polymerization and stability properties that allow for improved material processability and inclusion in organic semiconductor devices.

Abstract: An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin film transistor also comprises a first dielectric layer located between the first gate and the semiconducting layer in a direction of current flow through the semiconductor layer, the first dielectric layer comprising a polar elastomeric dielectric material that exhibits a double layer charging effect when a set voltage is applied to the first gate and a second dielectric layer located between the second gate and the semiconducting layer.

Abstract: Described herein are heterocyclic organic compounds. More specifically, described herein are compounds based on the combination of fused pyrrole structures with diketopyrrolopyrrole structures, methods for making these compounds, and uses thereof. The compounds disclosed have improved electronic, polymerization and stability properties that allow for improved material processibility and inclusion in organic semiconductor devices.

Abstract: Described herein are compositions including heterocyclic organic compounds. More specifically, described herein are bicyclic thiadiazole-based compounds that are combined with fused thiophenes structures, along with methods for making such compounds, and uses thereof.

Abstract: Articles utilizing strengthened glass substrates, for example, ion-exchanged glass substrates, in combination with organic molecules or polymers are described along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.