Abstract: A semiconductor device including an SOI substrate; a plurality of diffusion regions in substrate, separated by, and abutting a plurality of body regions in said substrate, a first one of the body regions and its abutting diffusion regions having a first width and successive ones of the body regions and their abutting diffusion regions having successively smaller widths; and a plurality of gates each over one of the plurality of body regions and separated from the body regions by a dielectric material, said plurality of gates connected to a common voltage terminal.

Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.

Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.

Abstract: A domino logic circuit having a clocked precharge is disclosed. The domino logic circuit includes a precharge transistor, an isolation transistor, and multiple evaluate transistors. Connected to a power supply, the precharge transistor receives a clock input. The isolation transistor is connected to ground and also receives the clock input. Each of the input transistors, which are coupled between the precharge transistor and the isolation transistor, receives a signal input. The gate dielectric thickness of the evaluate transistors is less than the gate dielectric thickness of the precharge transistor.

Abstract: A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.

Abstract: Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch and the gate terminal of the SOI device is connected to the FET device. The gate of the SOI device controls the FET switch connection of the body bias voltage signals to the SOI device to adjust the threshold value of the SOI device. Logic circuits incorporating the SOI devices are also disclosed, and the fabrication process for the SOI devices as well.

Abstract: A system and method for measuring hysteresis effects of a wafer process. The method comprises steps of generating a pulse having a pulse width equal to the delay of a transition through a delay chain wherein the delay chain has been in a static condition for a substantial length of time; counting a number of oscillations from a ring oscillator generated during the pulse width wherein the ring oscillator has been operating in a steady state condition; comparing the number of oscillations with an expected value; and correlating a difference resulting from the comparing step with a level of hysteresis effected by the wafer process.

Abstract: Described is a dynamic threshold field effect transistor (DTFET) that includes a gate-to-body contact structure within the gate. By forming the gate-to-body contact structure that can reduce the gate-to-body contact resistance and increase the device packing density, the DTFET can be used in silicon on insulator (SOI) technologies and take full advantages of the DT-CMOS performance benefit.

Abstract: A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.

Abstract: A semiconductor device and method of fabrication for such device in which a P- epitaxial layer is positioned above a P++ substrate. A P++ buried layer implant is positioned within the device between the P++ substrate and the P- epitaxial layer. A connecting p+ implant is placed within the epitaxial layer above the buried p+ blanket layer implant. In one exemplary embodiment, the device includes a shallow P-well with the P+ connecting implant in a position within the epitaxial layer connecting the shallow P-well and the buried P+ blanket implant layer.

Abstract: A semiconductor device and method of fabrication for such device in which a P- epitaxial layer is positioned above a P++ substrate. A P++ buried layer implant is positioned within the device between the P++ substrate and the P- epitaxial layer. A connecting p+ implant is placed within the epitaxial layer above the buried p+ blanket layer implant. In one exemplary embodiment, the device includes a shallow P-well with the P+ connecting implant in a position within the epitaxial layer connecting the shallow P-well and the buried P+ blanket implant layer.

Abstract: A method of forming field effect transistors (FETS) on a silicon wafer. A gate layer, polysilicon, is formed on a gate dielectric layer (oxide) on the silicon wafer. High voltage device locations are defined and blocked while normal NFETs and PFETs are formed. If the FET process is a gate predope process, the gate layer is blocked during predoping and patterned after the predoping is complete. Otherwise, the gate layer is patterned prior to doping. After gate definition, high voltage FETs are unblocked and implanted with a dopant, preferably boron (B) or (P), which dopes gates and source/drain regions such that they are depleted, resulting in a thicker effective gate dielectric than normal NFETs and PFETs.

Abstract: A voltage translation circuit for translating signals from a first voltage range to a second voltage range is disclosed. The voltage translation circuit includes a first inverter having an input that receives an intermediate signal and an output that provides an output signal having voltage levels that are latched to high and low states of the second voltage range. A second inverter is provided having an input connected to the first inverter output and an output connected to the first inverter input. A capacitor is also provided having an input that receives an input signal of the first voltage range and an output that provides the intermediate signal of the second voltage range. In addition, a pair of diodes are connected in series between a pair of voltage sources that provides high and low states of the second voltage range. The interconnected terminals of the pair of diodes are connected to the output of the capacitor.

Abstract: A novel precharge circuit is provided for dynamic CMOS logic circuits which are immune to leakage currents and reduce overall power consumption. The circuit comprises a precharge transistor for precharging a node to a high voltage level indicting a first logic state during a standby mode. Thereafter, during an active mode, the node may or may not be discharged by connected logic circuitry. If the node is discharged, then an additional transistor is provided to inhibit the precharging of the already charged node during a subsequent standby mode. Similarly, if the node is not discharged, a small keeper transistor is provided to keep the node at a fully precharged level.

Abstract: A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.