Patents by Inventor Minh Tien Nguyen

Minh Tien Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single channel four transistor SRAM
    Patent number: 6442061
    Abstract: A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first pass gate transistor is electrically connected to a first bit line, and the drain of the first pass gate transistor is electrically connected to a first state node. The gate of the first pass gate transistor is electrically connected to a memory cell enable line. A second pass gate transistor is also formed of the first transistor type. The second pass gate transistor also has a gate oxide with the first thickness. The source of the second pass gate transistor is electrically connected to a second bit line, and the drain of the second pass gate transistor is electrically connected to a second state node. The gate of the second pass gate transistor is electrically connected to the memory cell enable line. A first state node transistor is also formed of the first transistor type.
    Type: Grant
    Filed: February 14, 2001
    Date of Patent: August 27, 2002
    Assignee: LSI Logic Corporation
    Inventors: Weiran Kong, Gary K. Giust, Ramnath Venkatraman, Yauh-Ching Liu, Franklin Duan, Ruggero Castagnetti, Steven M. Peterson, Myron J. Buer, Minh Tien Nguyen