Abstract: A plasma system includes an electrode and an RF power supply unit supplying an RF power to the electrode to generate a plasma on the electrode. The RF power is provided in a pulse having a valley-shaped portion during an on-pulsing interval of the pulse. The valley-shaped portion is defined by a valley angle and a valley width. By controlling the valley angle and the valley width, the plasma may control the etching of a substrate.

Abstract: A method of evaluating a process of fabricating a semiconductor device includes obtaining measurement values from a plurality of sensors and predetermined reference values for each sensor, calculating, for each sensor, a measurement difference value between the reference value and the measurement value, calculating, for each sensor, a reference mean difference value between a maximum reference value for each sensor, which is greater than the reference value, and a minimum reference value for each sensor, which is less than the reference value, and dividing, for each sensor, the measurement difference value by the reference mean difference value to obtain a score value for each sensor.

Abstract: A process control device includes: a determination unit reading device data generated by sensors provided at a process device and determining whether the process device is in a normal state or not; a correction value calculation unit calculating a correction value of a recipe by using measurement data generated by a measuring device provided at a succeeding stage of the process device and the device data when the determination unit determines that the process device is in the normal state, and calculating a correction value of the recipe by using the measurement data when the determination unit determines that the process device is not in the normal state; and a recipe correction unit correcting the recipe to be supplied to the process device based on the correction value outputted by the correction value calculation unit and transmitting the recipe to the process device.