Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.

Abstract: A series of substrate transport paths for transporting substrates is arranged on upper and lower stories. Substrates are transferable between the substrate transport path on the first story and the substrate transport path on the second story. The paths include a going-only path for transporting the substrates forward, and a return-only path for transporting the substrates in the opposite direction, these paths being arranged on the upper and lower stories. An indexer connects one end of the substrate transport path on one story to one end of the substrate transport path on the other story. An interface connects the other end of the substrate transport path on one story to the other end of the substrate transport path on the other story. This construction efficiently reduces a waiting time due to interference between the substrates transported along the going-only path and the substrates transported along the return-only path.

Abstract: A chemical treating apparatus for performing a predetermined treatment of a principal surface of a substrate by delivering a treating solution thereto. The apparatus includes a treating solution delivery nozzle for delivering the treating solution to the principal surface of a substrate. The nozzle has a treating solution reservoir adjacent a tip end thereof for storing the treating solution. A temperature control device holds the treating solution reservoir to control the temperature of the treating solution in the treating solution reservoir through heat exchange with the treating solution.

Abstract: A substrate (W) is held in an approximately horizontal position by a substrate holder (10) and is rotated by a spinning motor (13). A rinsing liquid supply nozzle (140) is rotatably supported at its one end by a second nozzle movement mechanism (150) and is rotated to pass over the substrate (W). The rinsing liquid supply nozzle (140) is rotated to pass over the substrate (W) and at the same time to discharge a rinsing liquid from its discharge unit. At this time, the rinsing liquid supply nozzle (140) and the substrate (W) are rotated so that a virtual scanning direction (La) of the substrate (W) is substantially perpendicular to a direction of extension of the rinsing liquid supply nozzle (140). That is, since the rinsing liquid supply nozzle (140) is shifted in the virtual scanning direction (La), a non-supplying area of the substrate (W) where a rinsing liquid is not supplied can successively be made up and eliminated as the scanning by the nozzle (140) proceeds.

Abstract: A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.

Abstract: A series of substrate transport paths for transporting substrates is arranged on upper and lower stories. The substrates are transferable between the substrate transport path on the first story and the substrate transport path on the second story. The substrate transport paths define a going-only path for transporting the substrates forward, and a return-only path for transporting the substrates in the opposite direction, the going-only path and return-only path being arranged on the upper and lower stories. An indexer connects one end of the substrate transport path on one story to one end of the substrate transport path on the other story. An interface connects the other end of the substrate transport path on one story to the other end of the substrate transport path on the other story.

Abstract: A developer supply nozzle moves from the side of a first edge of a substrate to the side of a second edge thereof opposite from the first edge to apply a developer across a major surface of the substrate. After a lapse of required development process time, a rinsing solution supply nozzle moves from the side of the first edge of the substrate to the side of the second edge thereof to apply a rinsing solution across the major surface of the substrate. Making the moving speed of the rinsing solution supply nozzle higher than the moving speed of the developer supply nozzle shortens actual developing time at a site (downstream relative to a scanning direction) where a development reaction is apt to accelerate under the influence of fluctuations of the developer caused by dropping of the rinsing solution.

Abstract: A substrate (W) is held in an approximately horizontal position by a substrate holder (10) and is rotated by a spinning motor (13). A rinsing liquid supply nozzle (140) is rotatably supported at its one end by a second nozzle movement mechanism (150) and is rotated to pass over the substrate (W). The rinsing liquid supply nozzle (140) is rotated to pass over the substrate (W) and at the same time to discharge a rinsing liquid from its discharge unit. At this time, the rinsing liquid supply nozzle (140) and the substrate (W) are rotated so that a virtual scanning direction (La) of the substrate (W) is substantially perpendicular to a direction of extension of the rinsing liquid supply nozzle (140). That is, since the rinsing liquid supply nozzle (140) is shifted in the virtual scanning direction (La), a non-supplying area of the substrate (W) where a rinsing liquid is not supplied can successively be made up and eliminated as the scanning by the nozzle (140) proceeds.

Abstract: A developer supply nozzle moves from the side of a first edge of a substrate to the side of a second edge thereof opposite from the first edge to apply a developer across a major surface of the substrate. After a lapse of required development process time, a rinsing solution supply nozzle moves from the side of the first edge of the substrate to the side of the second edge thereof to apply a rinsing solution across the major surface of the substrate. Making the moving speed of the rinsing solution supply nozzle higher than the moving speed of the developer supply nozzle shortens actual developing time at a site (downstream relative to a scanning direction) where a development reaction is apt to accelerate under the influence of fluctuations of the developer caused by dropping of the rinsing solution.

Abstract: A chemical treating apparatus for performing a predetermined treatment of a principal surface of a substrate by delivering a treating solution thereto. The apparatus includes a treating solution delivery nozzle for delivering the treating solution to the principal surface of a substrate. The nozzle has a treating solution reservoir adjacent a tip end thereof for storing the treating solution. A temperature control device holds the treating solution reservoir to control the temperature of the treating solution in the treating solution reservoir through heat exchange with the treating solution.

Abstract: A substrate processing apparatus includes a coating section, a developing section, a heat-treating section and a transport mechanism. The coating section has first processing units each for performing a coverage process to supply a photoresist solution to a substrate and cover a surface of the substrate with the photoresist solution, a second processing unit for spinning the substrate, after the coverage process, at high speed to make the photoresist solution into a film, dry the photoresist film, and clean the substrate. All substrates are processed with the same coating conditions to suppress differences in quality among the substrates. The first and second processing units perform the respective processes concurrently to improve the throughput of substrate processing.

Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: A substrate processing apparatus includes a coating section, a developing section, a heat-treating section and a transport mechanism. The coating section has first processing units each for performing a coverage process to supply a photoresist solution to a substrate and cover a surface of the substrate with the photoresist solution, a second processing unit for spinning the substrate, after the coverage process, at high speed to make the photoresist solution into a film, dry the photoresist film, and clean the substrate. All substrates are processed with the same coating conditions to suppress differences in quality among the substrates. The first and second processing units perform the respective processes concurrently to improve the throughput of substrate processing.

Abstract: An apparatus for applying a coating solution to a surface of a substrate to form a coating film of desired thickness thereon. The apparatus includes a rotary supporting device for supporting and spinning the substrate in horizontal posture, a solvent spraying device for spraying a solvent to the substrate, a coating solution supplying device for supplying the coating solution to the substrate, a storage device for storing a processing program stipulating varied points and periods of time, a timer acting as a reference for each point or period of time stored in the storage, and a controller operable to perform controls based on the points and periods of time and with reference to the timer.

Abstract: An atmospheric conditioning unit for supplying temperature- and humidity-controlled air to a chemical processing part (spin coater) is arranged immediately above a chemical processing part, between this chemical processing part and a heat treatment part (including a hot plate and a cool plate). Namely, the chemical processing part, the atmospheric conditioning unit and the heat treatment part are vertically arranged in a stacked manner. The atmospheric conditioning unit receives external air from an opening. A closed partition is provided to block air flow between the atmospheric conditioning unit and a transport area. The temperature- and humidity-controlled air supplied from the atmospheric conditioning unit to the spin coater forms a downflow in the spin coater, and thereafter rises through an opening and joins with the air flowing from the opening, to be introduced into the atmospheric conditioning unit again and reused.

Abstract: A substrate thermal processing apparatus easily changes a set temperature at which a substrate is set while thermally processed. A heating plate of the substrate thermal processing apparatus comprises a substrate supporting plate which supports a substrate, an auxiliary heating portion and a main heating portion, and a cooling Peltier element and a water cooling jacket. For heating a substrate, heat which is generated at the main heating portion which comprises a heater portion is transmitted to the substrate supporting plate through the auxiliary heating portion which comprises a Peltier element, so that the substrate is heated up. When the temperature of the substrate supporting plate is to be decreased, the auxiliary heating portion and the cooling Peltier element guide the heat of the substrate supporting plate to the water cooling jacket, and the heat is discharged outside by cooling water.

Abstract: A developing apparatus in which a substrate holding part holds a substrate in a stationary state, and a developer discharge nozzle starts scanning from a scanning start position. After scanning starts, the developer discharge nozzle discharges a developer at a discharge start position before a slit discharge port thereof reaches the substrate. The developer discharge nozzle moves linearly on the substrate in a scanning direction while discharging the developer, passes over the substrate, and thereafter stops discharging the developer at a discharge stop position separated from the substrate. The developer discharge nozzle stops scanning when reaching a scanning stop position.

Abstract: A method of applying a coating solution for forming a coating film of desired thickness. The coating solution begins to be supplied to a region centrally of a substrate. The spinning substrate is accelerated from a supplying rotational frequency to a higher, target rotational frequency before the coating solution is spread by the supplying rotational frequency to cover an entire surface of the substrate. Then, the supply of the coating solution is stopped. Subsequently, the substrate is spun with a film-forming rotational frequency lower than the target rotational frequency to form the coating film. The substrate is spun at high speed with the target rotational frequency for a variable period of time to adjust thickness of the coating film.

Abstract: A substrate processing apparatus comprises a first substrate transfer unit having a first transfer path and a second substrate transfer unit having a second transfer path. A spin coating unit and a spin developing unit are arranged along the first transfer path, and a substrate cassette is arranged along the second transfer path. A substrate transport robot of the second substrate transfer unit selectively introduces a substrate received from a substrate transport robot of the first substrate transfer unit in one of external exposure apparatuses arranged on both end portions of the second transfer path, and discharges the substrate from the exposure apparatus for transfering the same to the substrate transport robot of the first substrate transfer unit. Thereby the substrate processing apparatus can avoid or relieve reduction of operational efficiency even if its throughput is different from that of an exposure apparatus.