Abstract: An imaging system includes a terminal device that includes an imaging sensor, and a head mounted display device that receives an image captured by the imaging sensor from the terminal device and displays the captured image. The imaging system includes at least one memory and at least one processor which function as: a detecting unit configured to detect the display device from the captured image; and a display control unit configured to control display of the captured image on the display device, based on a detection result of the display device using the detecting unit.

Abstract: To provide a liquefied gas supply device and supply method that has good operability and a compact structure, and enables stable supply of large flow rates of liquefied gas while managing the consumption amount of liquefied gas promptly in real time. A liquefied gas supply device characterized by having container 1 filled with liquefied gas, load cell 2 for measuring the weight of container 1, halogen lamp unit 3 for heating container 1, and a gas transfer means to transfer gas in the gas-phase section of container1, and arranging halogen lamp unit 3, comprising halogen lamp heater 3a and space 3b for the lamp, and load cell 2 in an integrated structure at bottom section 1a of container 1.

Abstract: To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62.

Abstract: A cleaning apparatus (30) is connected to a treating chamber (12) of a CVD apparatus (10) for forming a silicon film. The cleaning apparatus (30) has a first, a second, and a third gas sources (32, 34, 36) and a chlorine gas, a fluorine gas, and an inert gas are introduced from the gas sources through FMC (38a, 38b, 38c), respectively, with flow rates controlled independently from one another. Those gases are gathered at a pipe (42) and mixed into a mixed gas. The mixed gas is passed through a heated reactor (44) such as a heat exchanger to thereby react the chlorine gas with the fluorine gas and form a formed gas containing fluorinated chlorine gas such as CIF3. The formed gas is supplied to the treating chamber (12) through a cooler (46), an analyzer (48) and a buffer (54).