Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: The present invention aims to exclude the influence of stray light dye to a heating lamp when measuring the temperature of an object to be treated, such as a wafer, with the use of a radiation thermometer. The present invention utilizes the relationship between a power W supplied from an output control section 28 to lamps 22 and optical energy radiated from the lamps 22. Influence which the light radiated from the lamps 22 exerts on the output voltage of a photodiode 18 is experimentally found beforehand as a function of the power W, and stored in a computing section 26. The computing section 26 subtracts the influence of stray light from the lamps 22, which is included in the output voltage of the photodiode 18, from the output value of the photodiode 18 on the basis of the value of the power W transmitted from the output control section 28, and calculates the temperature of a susceptor 8.

Abstract: A heat treatment apparatus enables a rapid temperature rise of an object to be processed while giving an excellent economical efficiency. A heating unit heats an object to be heated by irradiating a light onto the object. A plurality of lamps are provided in a lamp house. The lamps include at least one first lamp and a plurality of second lamps each having an irradiation area smaller than that of the first lamp. The lamp house has a first lamp accommodation part at a center thereof and a second lamp accommodation part surrounding the first lamp accommodation part so that the first lamp accommodation part accommodates the first lamp and the second lamp accommodation part accommodates the second lamps.

Abstract: A temperature measuring method measures the temperature of a measuring object, such as a semiconductor wafer, by a radiation thermometer capable of approximating the relation between its output and the temperature of the measuring object by a predetermined straight line and of being calibrated by properly determining a slope and a y-intercept for the straight line. The measuring method carries out a procedure including the steps of measuring the reflectivity of a measuring object regarding the light of a wavelength that is not transmitted by the measuring object, and determining a slope and a y-intercept for a proper straight line for the measuring object on the basis of results of processing the measuring object by a predetermined process, such as a film forming process, that provides a result, such as the thickness of a film, corresponding to process temperature.

Abstract: From a side surface of a susceptor 2, in parallel with a surface of the susceptor 2 and directing toward a center portion, a sensor insertion hole 21 is bored, in this sensor insertion hole 21, a temperature sensor 30 is fixed. A tip of a sensor insertion hole 21 is communicated with a heat rays guide hole 22 that is bored from an upper surface of the susceptor 2 vertical to the surface. At a junction of a sensor insertion hole 21 and a heat rays guide hole 22, a reflector 23 is formed with an angle of approximately 45° tilted with respect to an upper surface of a susceptor 2. Heat rays radiated from a wafer W are led into a heat rays guide hole 22 and reflected at a reflector 23 to guide into a sensor insertion hole 21 and detect.