Patents by Inventor Mira Bakshi

Mira Bakshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for measuring peak carrier concentration in ultra-shallow junctions
    Patent number: 7403022
    Abstract: A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.
    Type: Grant
    Filed: January 19, 2006
    Date of Patent: July 22, 2008
    Assignee: KLA-Tencor, Inc.
    Inventors: Alex Salnik, Lena Nicolaides, Jon Opsal, Mira Bakshi
  • Method for measuring ion-implanted semiconductors with improved repeatability
    Patent number: 7330260
    Abstract: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
    Type: Grant
    Filed: February 28, 2005
    Date of Patent: February 12, 2008
    Assignee: KLA-Tencor Corporation
    Inventors: Lena Nicolaides, Mira Bakshi, Alex Salnik, Jon Opsal
  • Method for measuring peak carrier concentration in ultra-shallow junctions
    Publication number: 20060166385
    Abstract: A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.
    Type: Application
    Filed: January 19, 2006
    Publication date: July 27, 2006
    Inventors: Alex Salnik, Lena Nicolaides, Jon Opsal, Mira Bakshi
  • Method for measuring ion-implanted semiconductors with improved repeatability
    Publication number: 20050195399
    Abstract: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.
    Type: Application
    Filed: February 28, 2005
    Publication date: September 8, 2005
    Inventors: Lena Nicolaides, Mira Bakshi, Alex Salnik, Jon Opsal