Abstract: The present invention relates generally to the field of semiconductors and/or semiconductor structures (e.g., solar cells, etc.), to chemical compositions for manufacturing such semiconductors and/or semiconductor structures, and/or to methods for manufacturing such semiconductors and/or semiconductor structures. In another embodiment, the present invention relates to chemical compositions and methods for controlling surface passivation, dead layer etchback, anti-reflective, potential induced degradation, and other properties of semiconductor surfaces used for various semiconductor applications including, but not limited to, solar cells.

Abstract: Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Abstract: Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Abstract: Disclosed is a method, process, solar cell design, and fabrication technology for high-efficiency, low-cost, crystalline silicon (Si) solar cells including but not restricted to solar grade single crystal Si (c-Si), multi-crystalline Si (mc-Si), poly-Si, and micro-Si solar cells and solar modules. The RTWCG solar cell fabrication technology creates a RTWCG SiOx thin film antireflection coating (ARC) with a graded index of refraction and a selective emitter (SE). The resulting top surface of the SiOx oxide can be textured (TO) concomitant with the growth process or through an additional mild wet chemical step.

Abstract: Disclosed is a method for making low metallic impurity SiO-based dielectric thin films on semiconductor substrates using a room temperature wet chemical growth (RTWCG) process for electronic and photonic (optoelectronic) device applications. The process comprises soaking the semiconductor substrate into the growth solution. The process utilizes a mixture of aqueous inorganic or organic based silicon source solution, an inorganic reduction oxidation (redox) aqueous solution, non-invasive inorganic or organic based liquid additives for adjusting the growth rate and reducing the metallic impurity concentration within the SiO-based film, with or without an electron exchange pyridine based component, and an inorganic homogeneous catalyst for enhancing the growth of the SiO-based film.

Abstract: Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.

Abstract: Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process utilizes a mixture of a silicon source, a pyridinium compound, an aqueous redox solution, and a homogeneous aqueous solution.

Abstract: This invention refers to a removal and recovery method of pollutant materials. A waste stream source of polluted water and/or waste gases containing waste acids, bases and salts, and/or waste air pollutant suspension particles are fed into a separation reactor. The combined physicochemical effects of removal/recovery of pollutants inside the reactor take place by solubilization, ionization, reaction, deposition and settling, which concurrently remove and separate the pollutants as solid materials, deposited on selective electrodes sets, as gases and as sludge and/or precipitates. The reactor is kept at the working temperature using a waste industrial heat, and the separation processes take place by applying a voltage source between a spaced apart system of selective electrodes, and by using a ionizing source of waste spent fuel nuclear bars or electromagnetic radiation.

Abstract: This invention refers to a removal and recovery procedure and method of pollutant materials, which separates contaminants from waste inorganic aqueous solutions and from waste air pollutants having contaminants in therein, with pressure, temperature, electrical-and radiation fields, simultaneously/successively applied. A waste stream source of polluted water and/or waste gases containing waste acids, bases and salts, and/or waste air pollutant suspension particles are fed into a separation reactor. The combined physicochemical effects of removal/recovery of pollutants inside the reactor take place by solubilization, ionization, reaction, deposition and settling, which concurrently remove and separate the pollutants as solid materials, deposited on selective electrodes sets, as gases and as sludge and/or precipitates.

Abstract: Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.

Abstract: A water purification method and apparatus is described which distills a contaminated water supply having contaminants dissolved therein with electrically powered spaced apart immersion electrodes. When connected to a source of alternating electrical current, the electrode members cooperate to distill water by heating while concurrently removing the contaminants as solid precipitates in the contaminated remaining water.