Abstract: In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.

Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Abstract: Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

Abstract: Disclosed is a method of performing a liquid processing on a workpiece by a liquid containing charged minute metal-containing impurities, using a liquid processing apparatus including: a holding unit configured to hold the workpiece; and a liquid supplying mechanism configured to supply a liquid to the workpiece held by the holding unit. The method includes: removing the metal-containing impurities contained in the liquid while supplying the liquid to the workpiece held by the holding unit; and/or controlling charging of the workpiece held by the holding unit to suppress the metal-containing impurities from being attached to the workpiece by an electrostatic force.

Abstract: Disclosed is a method for removing metal contamination present on an inner wall of a fluorine-based resin used in a chemical liquid supply line that supplies a chemical liquid to a workpiece. The method includes bringing some or all of a cleaning material reactive to a metal forming the metal contamination into a gaseous state; supplying the gaseous cleaning material to the chemical liquid supply line; and removing the metal contamination by reacting the gaseous cleaning material with the metal contamination present on the inner wall of the fluorine-based resin used in the chemical liquid supply line.

Abstract: In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.

Abstract: A substrate cleaning method for removing particles adhered to a substrate includes: acquiring particle information including diameters of the particles adhered to the substrate; controlling, based on the acquired particle information, a factor related to sizes of gas clusters having aggregates of atoms or molecules of a cleaning gas; ejecting the cleaning gas, at a higher pressure than a processing atmosphere where the substrate is provided, to the processing atmosphere and generating the gas clusters by adiabatic expansion; and removing the particles by irradiating the gas clusters in a perpendicular direction to a surface of the substrate. As a result, even if recesses for a circuit pattern are formed on the surface of the substrate, the particles in the recesses can be removed at a high removal rate.

Abstract: A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Abstract: A method for manufacturing an organic transistor includes laminating a base insulating layer on a substrate; forming source/drain electrodes on the base insulating layer; laminating an organic semiconductor layer to cover the electrodes and be in contact with the base insulating layer; laminating a gate insulating layer on the organic semiconductor layer; forming a gate electrode on the gate insulating layer; and performing, before the organic semiconductor layer is formed, surface treatment on the surface of the base insulating layer which is in contact with the organic semiconductor layer. The surface treatment is performed such that, when W1 represents the work of adhesion between two laminated layers using the same material of the organic semiconductor layer, the work of adhesion W2 between the base insulating layer and the organic semiconductor layer when the organic semiconductor layer is formed on the surface-treated base insulating layer satisfies the relationship W1?W2.

Abstract: A virus detection device includes a diffusion unit configured to diffuse a virus in a gas as an inspection target into an aqueous solution containing a fluorescent antibody specifically adsorptive to the virus by bringing the gas into contact with the aqueous solution and configured to adsorb the fluorescent antibody to the virus in the gas; an atomization unit configured to atomize the aqueous solution and generate a mist group of the aqueous solution in which the gas is diffused; a fluorescence measuring unit configured to measure a fluorescence intensity of the mist group; and an air current generator configured to form an air current flowing toward the fluorescence measuring unit from the atomization unit.

Abstract: An evaporating method is capable of forming a thin film on a substrate by a vapor deposition process. The evaporating method includes measuring a vapor concentration of a material gas discharged to the substrate by a detector; and controlling a film forming condition based on a measurement result from the detector.

Abstract: A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

Abstract: There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

Abstract: There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

Abstract: Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.

Abstract: A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.

Abstract: In a measuring apparatus, an atmosphere to be inspected taken out from a space to be inspected in a processing system is analyzed for organic gas concentration. The apparatus is provided with a collector having an approach connected to the space to be inspected. The collector is connected to a gas exhaust system and an adsorption material for preparing a captured organic gas is held in the collector. A temperature control mechanism including a heater controls the adsorption/desorption of organic gas through temperature control of the adsorption material. A carrier gas is supplied from a carrier gas supplying system in order to transfer the desorbed gas taken from the captured organic gas and the concentration of organic gas in the carrier gas transferring the desorbed gas is determined in a concentration measuring unit.

Abstract: A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.

Abstract: Provided is a method and apparatus for inspecting a defect of a shape formed on a substrate. Primary inspection is sequentially performed on specific patterns in a plurality of divided regions of the substrate by using an optical method, and one or more regions on which secondary inspection is to be performed are selected from the regions. One or more defects are detected by performing the secondary inspection using an electron beam on the selected regions.

Abstract: Provided is a substrate inspection apparatus for inspecting defects of a pattern formed on a laminated structure on a substrate. The laminated structure includes a first and a second layer sequentially formed on the substrate, which have different compositions from each other. The substrate inspection apparatus includes: an electron emission unit for irradiating primary electrons onto the substrate; an electron detection unit for detecting secondary electrons generated by irradiating the primary electrons; a data processing unit for processing data of the secondary electrons detected by the electron detection unit; and a voltage control unit for controlling an acceleration voltage of the primary electrons. The voltage control unit controls the acceleration voltage such that the primary electrons irradiated to the exposed second layer arrive at the inside of the first layer or the second layer other than near an interface of the first layer and the second layer.