Patents by Inventor Mitinori Iwai

Mitinori Iwai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 6730992
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: May 4, 2004
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
  • Semiconductor device and method of manufacturing the same
    Patent number: 6632708
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Grant
    Filed: December 19, 2000
    Date of Patent: October 14, 2003
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
  • Semiconductor device and method of manufacturing the same
    Publication number: 20030151119
    Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 14, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai