Abstract: A sheet for thermal bonding which has a tensile modulus of 10 to 3,000 MPa and contains fine metal particles in an amount in the range of 60-98 wt % and which, when heated from 23° C. to 400° C. in the air at a heating rate of 10° C./min and then examined by energy dispersive X-ray spectrometry, has a carbon concentration of 15 wt % or less.

Abstract: A sheet for thermal bonding which has a tensile modulus of 10 to 3,000 MPa and contains fine metal particles in an amount in the range of 60-98 wt % and which, when heated from 23° C. to 400° C. in the air at a heating rate of 10° C./min and then examined by energy dispersive X-ray spectrometry, has a carbon concentration of 15 wt % or less.

Abstract: An epoxy resin composition, comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a carboxylic acid compound that satisfies at least one selected from the group consisting of the following A, B and C below: A: having at least one carboxy group and at least one hydroxy group; B: having at least two carboxy groups; and C: having a structure in which two carboxy groups are condensed by dehydration.

Abstract: An epoxy resin composition, comprising an epoxy resin, a curing agent, a curing accelerator, an inorganic filler, and a carboxylic acid compound that satisfies at least one selected from the group consisting of the following A, B and C below: A: having at least one carboxy group and at least one hydroxy group; B: having at least two carboxy groups; and C: having a structure in which two carboxy groups are condensed by dehydration.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: The present invention relates to an epoxy resin composition for electronic parts encapsulation, including the following components (A) to (E), (A) an epoxy resin having an ICI viscosity of from 0.008 to 0.1 Pa·s and an epoxy equivalent of from 100 to 200 g/eq; (B) a phenol resin having an ICI viscosity of from 0.008 to 0.1 Pa·s and a hydroxyl-group equivalent of from 100 to 200 g/eq; (C) a curing accelerator; (D) an inorganic filler; and (E) a silicone compound, in which the component (D) is contained in an amount of from 82 to 88 wt % of the whole of the epoxy resin composition, the component (E) is contained in an amount of from 5 to 15 wt % of the whole of organic components in the epoxy resin composition, and the epoxy resin composition has a gelation time of 15 to 25 seconds.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (D): (A) an epoxy resin; (B) a phenol resin; (C) an inorganic filler, and (D) a silicone compound containing an alkoxy group directly bonded to silicon atom in an amount of 10 to 45 wt % based on the entire silicone compound and having a specific gravity of 1.10 to 1.30.

Abstract: Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip is formed on a metal support layer 1 in a way such that the substrate can be separated from the metal support layer, the chip 3 is mounted on the wiring circuit substrate 2, a sheet-shaped resin composition T is placed on the chip and heated on the chip to seal the chip, and the metal support layer is separated and divided to obtain individual semiconductor devices.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, including the following components (A) to (E):(A) an epoxy resin; (B) a phenol resin other than component (C); (C) a silane-modified phenol resin represented by Formula (1) as defined in the specification; (D) a curing accelerator; and (E) an inorganic filler; wherein the component (C) is contained in an amount of 0.8 to 30.0% by weight based on a total weight of organic components in the epoxy resin composition.

Abstract: A method of manufacturing a semiconductor device which is excellent in high-temperature high-humidity reliability without decreasing moldability and curability is provided. The method includes sealing a semiconductor element in resin using a semiconductor-sealing epoxy resin composition; and then performing a heating treatment. The semiconductor-sealing epoxy resin composition contains (A) an epoxy resin of formula (1): wherein X is a single bond, —CH2—, —S— or —O—; and R1 to R4, which may be the same as or different, are each —H or —CH3, (B) a phenolic resin, (C) an amine-based curing accelerator, and (D) an inorganic filler. The heating treatment is performed under heat treatment conditions defined by a region in which a relationship t?3.3×10?5 exp(2871/T) is satisfied where t is heat treatment time in minutes and T is heat treatment temperature in ° C. and where 185?T?300.

Abstract: Provided is a method of producing a semiconductor device having a structure wherein a semiconductor chip 3 is mounted on a wiring circuit substrate 2 and sealed with a resin. A wiring circuit substrate 2 having a connecting conductor portion that can be connected to an electrode of the chip is formed on a metal support layer 1 in a way such that the substrate can be separated from the metal support layer, the chip 3 is mounted on the wiring circuit substrate 2, a sheet-shaped resin composition T is placed on the chip and heated on the chip to seal the chip, and the metal support layer is separated and divided to obtain individual semiconductor devices.

Abstract: The present invention relates to an epoxy resin composition for semiconductor encapsulation, the epoxy resin composition including the following ingredients (A) to (C) and further including the following ingredient (D) as a flame retardant: (A) an epoxy resin; (B) a phenolic resin; (C) an inorganic filler; and (D) an aluminum hydroxide powder having a 50% volume cumulative diameter D50 (?m) of 1.5 to 5 ?m and a BET specific surface area S (m2/g) of 3.3/D50?S?4.2/D50, and having a ratio D50/D10 of 1.5 to 4 wherein D10 is a 10% volume cumulative diameter thereof.

Abstract: A thermosetting resin composition which contains: (A) an epoxy resin having at least two epoxy groups per molecule; (B) a hardener; (C) a compound represented by the following general formula (1) or (2); and (D) a microcapsule type hardening accelerator containing microcapsules each having a structure made up of a core containing a hardening accelerator and a shell covering the core and containing a polymer having a structural unit represented by the following general formula (3), and which, when examined by differential scanning calorimetry at a heating rate of 10° C./min, shows an exothermic peak due to reaction in the range of from 180 to 250° C., and a semiconductor device obtained through sealing with the composition are described.

Abstract: A thermosetting resin composition which contains:

Abstract: A thermosetting resin composition usable for sealing a gap formed between a printed circuit board and a semiconductor element in a semiconductor package having a face-down structure; a semiconductor device comprising a printed circuit board, a semiconductor element, and the thermosetting resin composition mentioned above, wherein a gap formed between the printed circuit board and the semiconductor element is sealed by the thermosetting resin composition; and a process for manufacturing the semiconductor device.

Abstract: A thermosetting resin composition usable for sealing a gap formed between a printed circuit board and a semiconductor element in a semiconductor package having a face-down structure; a semiconductor device comprising a printed circuit board, a semiconductor element, and the thermosetting resin composition mentioned above, wherein a gap formed between the printed circuit board and the semiconductor element is sealed by the thermosetting resin composition; and a process for manufacturing the semiconductor device.