Abstract: An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.

Abstract: A dielectric element employing an oxide-based dielectric film capable of suppressing oxidation of an electrode or deterioration of film characteristics of the oxide-based dielectric film is obtained. This dielectric element comprises an insulator film including the oxide-based dielectric film and the electrode including a first conductor film containing at least a metal and silicon. The aforementioned metal includes at least one metal selected from a group consisting of Ir, Pt, Ru, Re, Ni, Co and Mo. Thus, the aforementioned first conductor film serves as a barrier film for stopping diffusion of oxygen. In heat treatment for sintering the oxide-based dielectric film, therefore, oxygen is effectively inhibited from diffusing along grain boundaries of the electrode. Consequently, a conductive material located under the electrode can be inhibited from oxidation.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.

Abstract: A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction.

Abstract: In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature,

Abstract: A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.

Abstract: Apparatus is provided for carrying out a varnish impregnation method wherein a sheet-like base material is sequentially passed through a low-viscosity liquid storage region storing a low-viscosity liquid such as a solvent, a thermal syphon region, and a varnish storage region storing a varnish, the thermal syphon region being positioned between the low-viscosity liquid storage region and varnish storage region and communicating with both regions at air tight seals closed by liquid surfaces, and heating the base material in the thermal syphon region to vaporize the low-viscosity liquid impregnated in the base material. When the base material passes through the low-viscosity liquid, air contained in the base material is replaced with the low-viscosity liquid and discharged outside the apparatus. The low-viscosity liquid impregnated in the material is vaporized in the thermal syphon region.

Abstract: A method and apparatus for impregnating a fibrous base material with a varnish liquid, wherein the so-impregnated base material is substantially air free. A base material is passed under the surface of and through a supply of low-viscosity liquid such as to impregnate the base material with the low-viscosity liquid and displace air from the base material so as to provide a substantially air-free base material. The air-free base material is passed through an entrance for and into a syphon. An inert gas is supplied to the syphon so as to maintain an inert gas atmosphere therein sufficient to maintain the air-free condition of the base material. The air-free base material is then passed through an exit of the syphon and under the surface of and through a supply of varnish liquid sufficiently to displace the low-viscosity liquid from the air-free base material and impregnate the air-free base material with the varnish liquid.

Abstract: Apparatus is provided for carrying out a varnish impregnation method wherein a sheet-like base material is sequentially passed through a low-viscosity liquid storage region storing a low-viscosity liquid such as a solvent, a thermal syphon region, and a varnish storage region storing a varnish, the thermal syphon region being positioned between the low-viscosity liquid storage region and varnish storage region and communicating with both regions at air tight seals closed by liquid surfaces, and heating the base material in the thermal syphon region to vaporize the low-viscosity liquid impregnated in the base material. When the base material passes through the low-viscosity liquid, air contained in the base material is replaced with the low-viscosity liquid and discharged outside the apparatus. The low-viscosity liquid impregnated in the material is vaporized in the thermal syphon region.

Abstract: The present invention relates to a method and apparatus for drying a continuous material impregnated with a hardenable synthetic resin. The material is moved through at least one treating chamber within which radiant heat is applied onto the material and into which air is introduced in order to dilute the gaseous substances generated during the drying process and to at least partially exhaust them. The method is characterized in that heat is applied onto the continuous material in the form of radiant heat, and in that air is conducted in a controlled manner into the treating chamber as preheated fresh air and is guided to form a laminar air current that is substantially parallel to the continuous material as is possible. The installation has in the treating chamber (10, 11) at least one radiant heater (34, 36) and at least one fresh air inlet device (26) which is connected with a controlled fresh air supply device (40) and a heating device (38).