Abstract: An apparatus for processing a substrate may include a mixture bath, a plurality of reaction chambers and a control module. The mixture bath may be configured to receive a plurality of chemicals to form a mixture. Each of the reaction chambers may be configured to receive a respective substrate of a plurality of the substrates to be processed by the mixture. The control module may be configured to control supply of the mixture supplied from the mixing bath to the reaction chambers with a uniform concentration.

Abstract: The present invention is to provide a heating apparatus available to reduce temperature quickly with efficient cooling effects in the case of reducing the temperature of a chamber or the like. A substrate processing apparatus 1 comprises a heating unit 100 in a chamber inner space 23 surrounded by a processing chamber 11 and a cover 12. The heating unit 100 is provided by a planer heating body 113 between an outer shell 111 and an inner shell 112. The heating unit generates heat when electricity is carried to the planar heat generating body 113, and heats the chamber inner space 23 to a desired temperature. At a boundary section of the outer shell 111 and the planar shaped heating body 113 of the heating unit 100, a cooling medium flow path 114 is spirally arranged along the circumference surface of the heating unit 100.

Abstract: Provided is a deposition apparatus for organic EL capable of allowing vapor of a film forming material to be vapor deposited on a target object to be uniformly heated. A deposition apparatus, which performs a film forming process by vapor depositing a film forming material on a target object in a depressurized processing chamber, includes an evaporating head having a vapor discharge opening, disposed in the processing chamber, for discharging vapor of the film forming material. Inside the evaporating head, provided is a heater receiving member which is sealed with respect to an inside of the processing chamber, and installed is a communication path which allows the heater receiving member to communicate with an outside of the processing chamber. A power supply line for a heater received in the heater receiving member is disposed in the communication path and extended to the outside of the processing chamber.

Abstract: The present invention provides a magnetic fluid seal device which enables to avoid the increase of the torque due to the aggregation of the solute of the magnetic fluid or the condition in which it is unable to start. According to the magnetic fluid seal device of the present invention, the hearer 151 is buried in the area where the magnetic fluid seal portion 140 is position inside the shaft 110. The torque meter 171 detects the rotation torque and the starting torque of the shaft 110, and when it is larger than the standard value, the magnetic fluid seal portion 140 is heated via the heater 151 inside the shaft 110. Thereby, the temperature of the magnetic fluid 146 and 147 rises, the solute of the magnetic fluid 146 and 147 is dispersed which lowers the viscosity thereof, and the rotation torque and the starting torque of the shaft 110 is lowered.

Abstract: A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.

Abstract: A semiconductor manufacturing device according to the present invention includes a processing chamber (11), a transferring passage (12) through which a wafer is put in and taken out of the processing chamber (11), an exhaust passage (13) and exhaust lines (40 and 40?) through which a processing gas inside the processing chamber (11) is exhausted, and so on, and in order to heat the inner wall faces (11a, 11b, 12a, 13a, 410a, and 420a) of the processing chamber (11), the transferring passage (12), the exhaust passage (13) and the exhaust pipes (410 and 420), further includes sheet-like heating units (50, 60, 70, 80, 170, and 270) that sandwich and cover a thin plate-shaped resistive heating element by a pair of metal plates and cover the inner wall faces from the inner side. Thereby, the heating efficiency on the wall faces to be exposed to the processing gas increases, adhesion of by-products can be prevented, and deterioration of the resistive heating element can also be prevented.

Abstract: An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber (26) in which a vacuum can be formed. An electrode unit (38) has a heater unit (44) therein. A cooling block (40) having a cooling jacket (58) is joined to the electrode unit (38) so as to cool the electrode unit. A heat resistant metal seal member (66A, 66B) seals an electrode-side heat transfer space (62, 64) formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means (94) supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200° C. and, for example, a range from 350° C. to 500° C., and the heat transfer gas does not leak.

Abstract: A number of process chambers connected to a transfer module can be increased after a cluster system provided with the transfer module is initially established. The transfer module transfers an object to be processed between a transfer chamber and at least one process chamber connected to the transfer chamber. A housing of the transfer module defines the transfer chamber, the housing having a substantially rectangular cross section so that a plurality of the housings are connectable to each other. A movable part is provided in the transfer chamber, the movable part being movable along a base surface provided in the housing of the transfer module. A transfer part is provided on the movable part, the transfer part holding the object to be processed and being movable between the transfer chamber and the process chamber. A drive mechanism drives the movable part, and a control unit controls motion of the movable part.

Abstract: An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Abstract: Claimed and disclosed is a treatment apparatus for treating a substrate under decompressed atmosphere, comprising: a chamber, an exhausting means for exhausting the chamber, a first electrode provided in the chamber on which the substrate is mounted or held, a second electrode provided in the chamber opposing the first electrode, a liquid supply source containing a liquid material from which a process gas is generated, a housing provided between the liquid supply source and the chamber to be communicated to the liquid supply source and the chamber, a porous heating unit arranged in the housing for generating the process gas by heating the liquid material supplied from the liquid supply source into the housing in order to vaporize the liquid material, a process gas introduction section provided between the housing and the chamber for guiding the process gas from the housing to the chamber and vibrators to vibrate the porous heating unit.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: While maintaining transferability of a subject to be processed, plasma is made uniform. The plasma processor comprises a member for generating plasma and a member for controlling axial symmetry of the generated plasma. The axial symmetry control member comprises pin conductors movable in Z direction and an insert type gate valve. By approaching the pin conductor to the insert type gate valve and by arranging the pin conductors along an inside shape of the insert gate valve, even in the portion of the insert gate valve, an electric current can be flowed similarly with the portion of the chamber wall. Thereby, current flow can be made uniform.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

Abstract: Flow sensors 41 and 42 for detecting a flow load including the presence of a flow of gas are provided in supply lines 2a through 2d for supplying a given gas into a treatment chamber 6. A CPU 40 is provided for previously storing control parameters corresponding to the presence of a flow of gas. The presence of a flow of gas or a flow of IPA is detected by the flow sensors 41, 42 or an IPA supply pump 43, and detected signals are transmitted to the CPU 40. On the basis of a control signal outputted from the CPU 40, a cartridge heater 14, inner and outer tube heaters 25 and 26 and an insulation heater 52 are controlled. Thus, a control parameter adopted in accordance with the presence of a flow of gas to be used is determined, so that the control parameter previously stored in a data table 100 is selected in accordance with a control mode to control the temperature or pressure of the gas.

Abstract: A plasma etching apparatus has a central processing chamber, an upper exhaust chamber thereabove, and a lower exhaust chamber therebelow. The processing chamber, the upper exhaust chamber, and the lower exhaust chamber are airtightly formed by a central casing part, an upper casing part, and a lower casing part which are separably combined. The upper and lower exhaust chambers are respectively connected to upper and lower exhaust pumps. A susceptor having a support surface for supporting a target object, and an upper electrode or shower head opposing it are arranged in the processing chamber. A processing gas spouted through the shower head flows upward and downward toward the upper and lower exhaust chambers via the processing chamber.

Abstract: A vapor generating apparatus comprises: a convergent-divergent nozzle 50 having an inlet port 50a and an outlet port 50a for a gas for a vapor medium, the convergent-divergent nozzle 50 comprising a convergent nozzle portion 51a, which is formed so as to be tapered and narrowed from the inlet port 50a toward the outlet port 50b, and a divergent nozzle portion 51c, which is formed so as to be expanded from the convergent nozzle portion 51a toward the outlet port 50b; and a supply port 54 for a liquid to be evaporated, the supply port 54 being open to the divergent nozzle portion 51c of the convergent-divergent nozzle 50. Thus, it is possible to easily produce a gas using a smaller number of control factors, and it is possible to increase the amount of produced gas and decrease the vapor generating time.

Abstract: A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.