Abstract: A method for forming a MOS transistor having LDD structure by a simple and a few number of processes and a structure thereof are described. In accordance with the present invention, a low concentration of an impurity region can be formed in a semiconductor film part between an end of gate electrode and source or drain, by forming an ordinary gate insulating film extending beyond the gate electrode in the direction along the source and drain, in place of a spacer in the side of gate electrode which has been required for a preparation of conventional TFT having LDD structure, and further by forming a thinner insulating film than the gate insulating film in the side thereof, and by utilizing the thickness difference between the gate insulating film part excepting the gate electrode and the thin insulating film in the side thereof.

Abstract: A MOS transistor having a LDD structure is described. In accordance with the present invention a MOS transistor includes a low impurity concentration region formed in a semiconductor film between an end of a gate electrode and a source or drain. The transistor includes an insulating film extending beyond the gate electrode in the direction of the source and drain, the insulating film having a thicker portion over the channel region of the semiconductor film and a thinner portion over the source and drain regions of the semiconductor film, such that LDD regions can be formed by utilizing the thickness difference between the thick portion of the insulating film and the thin portion of the insulating.

Abstract: A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.

Abstract: A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region.

Abstract: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhand the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the tube formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90°.

Abstract: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90°.

Abstract: The invention is directed to an organic EL device with a flattened first electrode, and a method of fabricating the same. After an ITO film 11 serving as the first electrode is formed on a glass substrate 10, a combined flattening and leveling film 12 is formed and patterned to form a combined flattening and leveling film 12a. In addition, the ITO film 11 is over-etched to form an ITO film 11a together with an undercut portion 15. After a flattening film 14 or an insulating film is coated all over the surface, a large portion of the flattening film 14 and the flattening and leveling film 12a are removed to allow an insulating film 14a formed in the undercut portion 15 to remain at the same thickness as the ITO film 11a.

Abstract: An organic EL device comprises a hole injecting electrode, an electron injecting electrode, and at least one organic layer located between both the electrodes. The hole injecting electrode comprises a transparent electrode at a light emitting area, and a metal electrode located at a portion other than the light emitting area and having a sheet resistance of 1 &OHgr;/□ or lower.

Abstract: An organic EL display wherein electric connection between the electron injecting electrode layer and the electrode layer is improved, which is less likely to suffer from poor connection, and which exhibits low connection resistance is realized. A method for producing such an organic EL display is also realized. Such an organic EL display has an electrode structure which connects at least a terminal and an electron injecting electrode, and the electrode structure comprises an underlying layer 2 as a lower layer comprising a metal having low susceptibility to surface oxide layer formation, and an electrode layer 3 as an upper layer comprising a metal which has a susceptibility to surface oxide layer formation higher than that of the underlying layer 2. The underlying layer 2 and the electron injecting electrode layer 4 are in direct contact with each other at least in some parts in the region where the electrode layer 3 is connected to said electron injecting layer 4.

Abstract: An organic EL device comprises a hole injecting electrode, an electron injecting electrode, and at least one organic layer located between both the electrodes. The hole injecting electrode comprises a transparent electrode at a light emitting area, and a metal electrode located at a portion other than the light emitting area and having a sheet resistance of 1 &OHgr;/□ or lower.

Abstract: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90°.

Abstract: The invention provides an organic EL display device comprising a plurality of organic EL elements each having at least a first electrode, one or more organic layers participating in light emission capability, and a second electrode, the elements being able to be independently electrically operated to emit light, and a groove structure at the boundary between adjacent organic EL elements for isolating at least one of the electrodes between the adjacent organic EL elements. The organic EL display device featuring a greater proportion of light emitting region, higher reliability, a large size of substrate, a more number of elements arrayed in one substrate, and a reduced cost of manufacture is obtained as well as a method for the manufacture thereof.

Abstract: An organic EL device includes a substrate (21), a hole infecting electrode (22), an electron injecting electrode (25), and organic layers (23, 24) disposed between the electrodes. The hole injecting electrode (22) is an ITO electrode having (111) orientation. Due to improved film formation, close contact and physical properties at the interface between the hole injecting electrode and the organic layer, the device has a long lifetime, high luminance, high efficacy, and quality display and prevents the occurrence of current leakage and dark spots.

Abstract: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90.degree..

Abstract: An organic EL color display which can give off color light without recourse to a plurality of light emitting layers and be fabricated at low cost is built up of an organic EL color display comprising an organic EL light emitting device for emitting bluish green light, a blue transmitting layer, a green transmitting layer, a fluorescence converting layer that absorbs bluish green light and giving off light including red light, and a red transmitting layer.

Abstract: An organic electroluminescent display includes a substrate (1), and, in order from the substrate, a hole injection electrode, at least one organic layer, an electron injecting electrode, and a sealing plate, and wherein the substrate further includes thereon an element-isolating structure (7,8) for isolating planar structures of the organic layer and the electron injection electrode from each other during film formation, the element isolating structure being a solid structure containing a base part formed on the substrate side and an overhang part larger in width than the base part, and provided on a portion where the organic layer is isolated from the electron injecting electrode as well as other portions, so that the element isolating structure can function as a spacer for the sealing plate, and at least one type of filter layer (14a-14c) is interleaved between the element-isolating structure serving as the spacer and the substrate.

Abstract: An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).

Abstract: In a process for the fabrication of an organic EL display device having, on the surface of a substrate 1, a terminal electrode 3, a first electrode 2, an insulating layer 4 covering a portion of the first electrode 2, an organic functional layer 5 including a light-emitting layer, and a second electrode 6 including an interconnect layer 62, after forming the first electrode 2, the terminal electrode 3, and the insulating layer 4, a mask 8 for restricting the layer-forming region is placed on the substrate 1, then the organic functional layer 5 is formed, following which the interconnect layer 62 is formed by a process having a better step coverage than the process used to form the organic functional layer 5 such as to bring the interconnect layer 62 into contact with at least part of the terminal electrode 3. When the organic functional layer 5 and the second electrode 6 are formed in succession, the second electrode 6 and the terminal electrode 3 can be reliably connected without changing the mask 8.

Abstract: The invention provides an organic EL display device comprising a plurality of organic EL elements each having at least a first electrode, one or more organic layers participating in light emission capability, and a second electrode, the elements being able to be independently electrically operated to emit light, and a groove structure at the boundary between adjacent organic EL elements for isolating at least one of the electrodes between the adjacent organic EL elements. The organic EL display device featuring a greater proportion of light emitting region, higher reliability, a large size of substrate, a more number of elements arrayed in one substrate, and a reduced cost of manufacture is obtained as well as a method for the manufacture thereof.

Abstract: In manufacturing of an organic electroluminescence (EL) display device, after first electrodes are formed on a substrate, insulating films are formed on the first electrodes except regions corresponding to light emitting portions. Spacers are formed on the insulating films, and overhanging portions are formed so as to overhang the spacers. Thus, element isolating structure portions for isolating organic EL elements are formed. Then, organic EL films, second electrodes, and protecting films are sequentially formed between the spacers. In the thus formed light emitting portions of the organic EL display device, the bending angle of a bending portion of a pattern of the element isolating structure portion is larger than 90.degree..