Abstract: A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heat-flowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.

Abstract: Provided are a damper in which strange sound (whistling sound) generated when the damper has a small opening degree is suppressed, an air conditioning unit, and an air conditioner for vehicle. The damper has a wall surface (33) for forming a channel for allowing air to flow in it, a stationary portion (35) extending from the wall surface (33) toward the center of the channel (23), and a rotation portion (25) rotatably placed in the channel (23) and having one end (29) in contact with a portion of the stationary portion (35), which portion is on the downstream side of air flow in the channel (23). A curved wall portion (45) curved and projected toward the center of the channel (23) is formed at that position on the wall surface (33) with which the air flow passed between one end (29) and the stationary portion (35) collides.

Abstract: A bonding method of applying vibrations to a metal unit including copper while pressing the metal unit onto a bonding object to bond the metal unit to the bonding object is provided. The method includes: applying vibrations to the metal unit and bringing the metal unit into contact with the bonding object while applying the vibrations; gradually increasing a pressing load of the metal unit on the bonding object to a first pressing load; and reducing the pressing load to a second pressing load smaller than the first pressing load and gradually increasing an output power of the vibrations from a first output power to a second output power after the pressing load reaches the first pressing load, the first output power being applied during the first pressing load.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heatflowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: First and second wires are formed so that the further away from a semiconductor chip, the greater the distance between the first and second wires. This prevents currents flowing through the first and second wires from cancelling out each other, and further enables a metallic plate to be disposed as far away from the semiconductor chip as possible. In addition, configuring the metallic plate to have a constant width that is wider than the diameters of the first and second wires results in a wide connection range, thereby ensuring connection even when mounting misalignments occur between the wires and the metallic plate.

Abstract: An apparatus for manufacturing a semiconductor device, includes: a collet; an alignment stage; and a sheet feeding mechanism. The collet is configured to suck a surface of a semiconductor chip. The surface is on opposite side of a bonding surface to be bonded to a bonding target. The bonding surface is provided with a film-like adhesive layer. The collet includes a heater for heating the adhesive layer. The alignment stage is configured to support the semiconductor chip and to correct position of the semiconductor chip. The sheet feeding mechanism is configured to feed a release sheet onto the alignment stage.

Abstract: A wire bonding apparatus comprising: a capillary configured to have inserted therethrough a wire; a damper provided above the capillary and able to clamp hold the wire; and a load sensor configured to measure load incurred on the wire.

Abstract: A centrifugal fan includes a space in which the dimension between a shroud-facing wall and a shroud, from the outer peripheral side to the inner peripheral side of the shroud, is substantially uniform, wherein the shroud-facing wall includes a recess extending in the circumferential direction, the recess being disposed at the inner peripheral side of the outer peripheral end of the shroud-facing wall forming the space having the uniform dimension so that the recess forms a space larger than the other part.

Abstract: A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each other and disposed on a surface of the semiconductor substrate according to the photoelectric conversion elements. The method including the steps of successively subjecting a plurality of filter layers differing in color from each other to a patterning process to form the plurality of color filter patterns. At least one color filter pattern to be formed at first among the plurality of color filter patterns is formed by means of dry etching, and the rest of the plurality of the color filter pattern is formed by means of photolithography.

Abstract: A method of manufacturing a solid state imaging device having photoelectric conversion devices, the method including: 1) forming a plurality of color filters differing in color from each other, 2) forming a transparent resin layer on the color filters, 3) forming an etching control layer on the transparent resin layer, the etching control layer being enabled to be etched at a different etching rate from the etching rate of the transparent resin layer, 4) forming a lens master on the etching control layer by using a heat-flowable resin material, 5) transferring a pattern of the lens master to the etching control layer by dry etching to form an intermediate micro lens, and 6) transferring a pattern of the intermediate micro lens to the transparent resin layer by dry etching to form the transfer lenses.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: There is here disclosed a semiconductor device comprising a chip-mounting-member having a lead formed on its major surface, the lead having a thin film plated portion which covers a surface of a predetermined portion of the lead, a semiconductor chip having a bump formed on its major surface, and mounted on the chip-mounting-member by electrically connecting the bump to the lead via the plated portion, and an encapsulating-member formed between the semiconductor chip and the chip-mounting-member.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: There is here disclosed a semiconductor device comprising a chip-mounting-member having a lead formed on its major surface, the lead having a thin film plated portion which covers a surface of a predetermined portion of the lead, a semiconductor chip having a bump formed on its major surface, and mounted on the chip-mounting-member by electrically connecting the bump to the lead via the plated portion, and an encapsulating-member formed between the semiconductor chip and the chip-mounting-member.

Abstract: A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

Abstract: Disclosed is a semiconductor device comprising an integrated circuit chip, a first lead having a portion extending substantially in parallel to one side plurality of the chip, and a second lead located adjacent to the first lead. Each of the first and second leads has a recess and a projection continuously. The first lead and second lead are arranged adjacent to each other with the recess and projection of the first lead being in engagement with the projection and recess of the second lead. Bonding wires are bonded on the projection of the first lead and the projection of the second lead. The bonding wires electrically connect the chip to the first lead and also to the second lead.

Abstract: In a wire bonding apparatus comprising a torch electrode for melting an end of a metallic thin wire to form a ball thereof, a high voltage detecting circuit for detecting a voltage between the metallic thin wire and the torch electrode in order to output the detected voltage as a voltage signal, a ball diameter calculator, and a ball diameter display device for displaying the ball diameter outputted from the ball diameter calculator, are further provided.